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| 1 | Monte-Carlo Simulation of Surface Crack Growth Rate for Offshore Structural Steel E36-Z35显示文摘—The Monte-Carlo method is used to simulate the surface fatigue crack growth rate foroffshore structural steel E36-Z35,and to determine the distributions and relevance of the parameters in theParis equation.By this method,the time and cost of fatigue crack propagation testing can be reduced.Theapplication of the method is demonstrated by use of four sets of fatigue crack propagation data foroffshore structural steel E36-Z35.A comparison of the test data with the theoretical prediction for surfacecrack growth rate shows the application of the simulation method to the fatigue crack propagation tests issuccessful. | Ding, Keqin Liu, Chuntu Zhao, Junyou Guo, Aiju | 1999 | China Ocean Engineering1999，14，1： | 1 |
| 2 | A STUDY ON THE PHYSICAL MECHANISM OF RESISTANCE OF MAIN POPLAR STRAINS AGAINST CRYPTORRHYNCHUS LAPATHIL.IN NORTH CHINA显示文摘The physical mechanism of resistance of poplar against Cryptorrhynchus lapathiL.is directly correlated with the morphological structure of bark,concerning the following 5aspects:1.It is correlated with whether surface bark of larva transvered tunnel crack or not,ear-ly or late.Those that do not crack or crack late are susceptible strains while those that crack ear-ly are resistant strains.2.It is correlated with thickness of cork layer.Thick cork layer can in-crease resistance against pest while thin one is more susceptible to pest attack.3.It is related withage of tree.Trees at the age of 1-2 possess immunity to the pest,at 3-4 are relatively resistant,at5-8 are susceptible and over 9 are more resistant.4.It is also correlated with the rate of trees‘healing round the holes of larva tunnels.Those healing faster are resistant while those healingslower arc susceptible.5.It is related with the number of various scars on bark surface. | Liu Jingquan Hou Aiju Ding Fujun Northeast Forestry University | 1993 | Journal of Northeast Forestry University1993，4，1： | 1 |
| 3 | Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates显示文摘GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25μm on Si have been implanted with Si ions at 1.2MeV to dose of 1×10^(15)/cm^(2).A rapid infrared thermal annealing and white light annealing were then used for recrystallization.Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2MeV.The experimental result show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers. | XIAO Guangming YIN Shiduan ZHANG Jingping DING Aiju DONG Aihua ZHU Peiran ZHOU Junming LIU Jiarui | 1991 | Chinese Physics Letters1991，8，3： | 0 |
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