4篇
您的检索式：作者名="DING Haiou"
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| 1 | Adaptive Clutch Engaging Process Control for Automatic Mechanical Transmission 显示文摘 | Haiou Liu Huiyan Chen Huarong Ding | 2005 | Journal of Beijing Institute of Technology (S 1004-0579)2005，14，2： | 1 |
| 2 | Adaptive clutch engaging process control for automatic mechanical transmission显示文摘 | Liu Haiou Chen Huiyan Ding Huarong | 2005 | Journal of Belting lnstitue of Technology2005，14，2： | 1 |
| 3 | Dissipative Particle Dynamics Study on Platycodin's Solubilization Enhancing Effect Towards Five Drug Components显示文摘In this study,a dissipative particle dynamics mehtod was used to study the solubilization enhancing effect of platycodin towards 5 different drug components.Two factors were mainly considered,including the ,XlogP value of drug components and the sugar chain length of platycodin.As a result,it was found that there was an optimal drug XlogP value for the solubilization enhancing effect of platycodin,and it was different between the drug's own XlogP value and the optimal drug XlogP value of platycodin that determines the solubilization enhancing effect. | WU Zhimin DING Haiou YANG Chang GUO Shujuan DAI Xingxing SHI Xinyuan | 2019 | Chemical Research in Chinese Universities2019，35，1： | 0 |
| 4 | Ultra-thin Body Buried In_(0.35)Ga_(0.65)As Channel MOSFETs with Extremely Low Off-current on Si Substrates显示文摘In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al_(2)O_(3)/In P under different annealing conditions. A minimum interface trap density of 3×10^(11) cm^(-2) eV^(-1) is obtained without postmetallization annealing treatment.Additionally, utilizing Ti/Al_(2)O_(3)/In P MOS gate stack,we fabricated ultra-thin body buried In0.35 Ga0.65 As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200 nm gate length device with extremely low off-current of 0.6 n A/μm, and on-off ratio of 3.3×10^(5), is demonstrated by employing buried low indium(In_(0.35) Ga_(0.65) As) channel with In P barrier/spacer device structure, giving strong potential for future highperformance and low-power applications. | WANG Bo DING Peng FENG Ruize WANG Yanfu LIU Xiaoyu SUN Tangyou CHEN Yonghe LIU Xingpeng LI Qi LI Yue LIU Yingbo YIN Yihui ZHAO Hao ZHANG Wei LI Haiou JIN Zhi | 2021 | Chinese Journal of Electronics2021，30，6： | 0 |
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