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		题名	作者	年代	出处	被引量
	1	Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures显示文摘The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.	FANG Renfeng CAO Wenyu WEI Yanfeng WANG Yin CHEN Chuanliang YAN Jiasheng XING Yan LIANG Guijie ZHOU Shuxing	2023	原子能科学技术2023，57，12：	0

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