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		题名	作者	年代	出处	被引量
	1	Design and fabrication of a SiN-Si dua卜layer optical phased array chip显示文摘A SiN-Si dual-layer optical phased array(OPA)chip is designed and fabricated.It combines the low loss of SiN with the excellent modulation performance of Si,which improves the performance of Si single-layer OPA.A novel optical antenna and an improved phase modulation method are also proposed,and a two dimensional scanning range of 96°×14°is achieved,which makes the OPA chip more practical.	PENGFEI WANG GUANGZHEN LUO YANG XU YAJIE LI YANMEI SU JIANBIN MA RUITING WANG ZHENGXIA YANG XULIANG ZHOU YEJIN ZHANG JIAOQING PAN	2020	Photonics Research2020，8，6：	5
	2	4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects显示文摘A 4 –λ hybrid InGaAsP-Si evanescent laser array is obtained by bonding III–V distributed feedback lasers to a silicon on insulator(SOI) substrate using a selective area metal bonding technique. Multiple wavelengths are realized by varying the width of the III–V ridge waveguide. The threshold current is less than 10 mA for all wavelength channels under continuous-wave(CW) operation at room temperature, and the lowest threshold current density is 0.76 kA∕cm2. The side mode suppression ratio(SMSR) is higher than 40 dB for all wavelength channels when the injection current is between 20 mA and 70 mA at room temperature, and the highest SMSR is up to 51 dB. A characteristic temperature of 51 K and thermal impedance of 144°C/W are achieved on average.The 4 –λ hybrid InGaAsP-Si evanescent laser array exhibits a low threshold and high SMSR under CW operation at room temperature. The low power consumption of this device makes it very attractive for on-chip optical interconnects.	YAJIE LI HONGYAN YU WENGYU YANG CHAOYANG GE PENGFEI WANG FANGYUAN MENG GUANGZHEN LUO MENGQI WANG XULIANG ZHOU DAN LU GUANGZHAO RAN JIAOQING PAN	2019	Photonics Research2019，7，6：	0
	3	Ⅲ–Ⅴ compound materials and lasers on silicon显示文摘Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods.	Wenyu Yang Yajie Li Fangyuan Meng Hongyan Yu Mengqi Wang Pengfei Wang Guangzhen Luo Xuliang Zhou Jiaoqing Pan	2019	Journal of Semiconductors2019，40，10：	0

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