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| 1 | Epitaxial growth of large area ZrS_(2)2D semiconductor films on sapphire for optoelectronics显示文摘Recently,group-IVB semiconducting transition metal dichalcogenides(TMDs)of ZrS_(2) have attracted significant research interest due to its layered nature,moderate band gap,and extraordinary physical properties.Most device applications require a deposition of high quality large-area uniform ZrS_(2) single crystalline films,which has not yet been achieved.In this work,for the first time,we demonstrate the epitaxial growth of high quality large-area uniform ZrS_(2) films on c-plane sapphire substrates by chemical vapor deposition.An atomically sharp interface is observed due to the supercell matching between ZrS_(2) and sapphire,and their epitaxial relationship is found to be ZrS_(2)(0001)[1010]||Al_(2)O_(3)(0001)[1120].The epitaxial ZrS_(2) film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm^(2)·V^(−1)·s^(−1),and the optical phonon is the dominant scattering mechanism at room temperature or above.Furthermore,the optoelectronic applications of ZrS_(2) films are demonstrated by fabricating photodetector devices.The ZrS_(2) photodetectors exhibit the excellent comprehensive performance,such as a light on/off ratio of 106 and a specific detectivity of 2.6×10^(12) Jones,which are the highest values compared with the photodetectors based on other group-IVB two-dimensional TMDs. | Yan Tian Yong Cheng Jidong Huang Siyu Zhang Hao Dong Gaokai Wang Jingren Chen Jinliang Wu Zhigang Yin Xingwang Zhang | 2022 | Nano Research2022，15，7： | 1 |
| 2 | Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications显示文摘Recently,hexagonal boron nitride(h-BN),an ultra-wide bandgap semiconductor,has attracted considerable atten-tion owing to its excellent properties.In thin films grown on metal catalysts,contamination and damage induced by a transfer process cannot be avoided.Therefore,synthesizing h-BN films on non-catalytic dielectric substrates is desirable for electronic applications.In this study,we demonstrate the direct growth of high-quality h-BN films with a controllable thickness on sapphire substrates by using the pulsed laser deposition(PLD)technique.The effects of the deposition conditions and laser parameters on the growth of the h-BN films are systematically investigated by evaluating their characteristic Raman peaks.Among the various growth parameters studied,the substrate temperature has the greatest influence on the crystalline quality of the h-BN films,and the optimal pres-sure varies depending on the target-substrate distance.The h-BN film grown under optimal conditions exhibits a narrow Raman line width of∼30 cm^(−1),indicating a high crystalline quality.The photodetectors fabricated from the PLD-grown h-BN films exhibit superior deep-ultraviolet detection performance with a large on/offratio of>104,high photoresponsivity,and a sharp cut-offwavelength of 220 nm.This study presents the possibility of producing high-quality h-BN films by applying PLD on dielectric substrates for optoelectronic applications. | Gaokai Wang Jingren Chen Junhua Meng Zhigang Yin Ji Jiang Yan Tian Jingzhen Li Jinliang Wu Peng Jin Xingwang Zhang | 2021 | Fundamental Research2021，1，6： | 1 |
| 3 | Electrical and optical properties of hydrogen plasma treatedβ-Ga_(2)O_(3) thin films显示文摘The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed. | Qian Jiang Junhua Meng Yiming Shi Zhigang Yin Jingren Chen Jing Zhang Jinliang Wu Xingwang Zhang | 2022 | Journal of Semiconductors2022，43，9： | 0 |
| 4 | Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride显示文摘As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote epitaxy.However,there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy.Herein,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer h-BN.The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)epitaxy.Due to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices. | Jidong Huang Jingren Chen Junhua Meng Siyu Zhang Ji Jiang Jingzhen Li Libin Zeng Zhigang Yin Jinliang Wu Xingwang Zhang | 2024 | Nano Research2024，17，4： | 0 |
| 5 | A 3D microseismic data-driven damage model for jointed rock mass under hydro-mechanical coupling conditions and its application显示文摘Rock mass is a fractured porous medium usually subjected to complex geostress and fluid pressure simultaneously.Moreover,the properties of rock mass change in time and space due to mining-induced fractures.Therefore,it is always challenging to accurately measure rock mass properties.In this study,a three-dimensional(3D)microseismic(MS)data-driven damage model for jointed rock mass under hydro-mechanical coupling conditions is proposed.It is a 3D finite element model that takes seepage,damage and stress field effects into account jointly.Multiple factors(i.e.joints,water and microseismicity)are used to optimize the rock mass mechanical parameters at different scales.The model is applied in Shirengou iron mine to study the damage evolution of rock mass and assess the crown pillar stability during the transition from open-pit to underground mining.It is found that the damage pattern is mostly controlled by the structure,water and rock mass parameters.The damage pattern is evidently different from the two-dimensional result and is more consistent with the field observations.This difference is caused by the MS-derived damage acting on the rock mass.MS data are responsible for gradually correcting the damage zone,changing the direction in which it expands,and promoting it to evolve close to reality.For the crown pillar,the proposed model yields a more trustworthy safety factor.In order to guarantee the stability of the pillar,it is suggested to take waterproof and reinforcement measures in areas with a high degree of damage. | Jingren Zhou Jinfu Lou Jiong Wei Feng Dai Jiankang Chen Minsi Zhang | 2023 | Journal of Rock Mechanics and Geotechnical Engineering2023，15，4： | 0 |
| 6 | A Research Summary on the Chemical Constituents and Pharmacological Effects of the National Medicine Polygonum capitatum显示文摘Polygonum capitatum Buch.Ham.ex D.Don is a commonly used medicine in Zhuang people’s settlements,which has antipyretic,wind and evil-dispelling,dehumidifying and analgesic effects.The research on the chemical composition of P.capitatum began in the 1980 s.Modern scientific research has shown that it has antibacterial,cooling and blood sugar lowering effect.In order to better develop and utilize P.capitatum,this paper reviewed the progress of the chemical composition and pharmacological research of P.capitatum. | Jingren CHEN Ao XIE Wei WEI Haicheng WEN | 2020 | Agricultural Biotechnology2020，9，5： | 0 |
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