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22篇 您的检索式：作者名="LIU Caichi"

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	题名	作者	年代	出处	被引量
1	Investigation of Oxygen Precipitation and Intrinsic Gettering in Heavily Sb-doped Silicon显示文摘	Caichi Liu Qiuyan Hao	2003	Microelectronic Engineering2003，66，：	1
2	The influence of casting polysilicon performance by rapid heat treatment 显示文摘	Chen Yuwu Hao Qiuyan Liu Caichi	2008	Transactions of Materials and Heat Treatment2008，29，5：	1
3	显示文摘	Xu Yuesheng Liu Caichi Wang Haiyun	2003	J Microelectronic Engineering2003，66，：	1
4	Growth of Czochralski silicon under magnetic field显示文摘Growth of Czochralski (CZ) silicon crystals under the magnetic field induced by a cusp-shaped permanent magnet of NdFeB has been investigated. It is found that the mass transport in silicon melt was controlled by its diffusion while the magnetic intensity at the edge of a crucible was over 0.15 T. In comparison with the growth of conventional CZ silicon without magnetic field, the resistivity homogeneity of the CZ silicon under the magnetic field was improved. Furthermore, the Marangoni convection which has a significant influence on the control of oxygen concentration was observed on the surface of silicon melt. It is suggested that the crystal growth mechanism in magnetic field was similar to that in micro-gravity if a critical value was reached, named the growth of equivalent micro-gravity. The relationship of the equivalent micro-gravity and the magnetic intensity was derived as g=(v0/veff)g0. Finally, the orders of the equivalent micro-gravity corresponding to two crucibles with characteristic sizes were calculated.	XU Yuesheng LIU Caichi WANG Haiyun ZHANG Weilian YANG Qingxin LI Yangxian REN Binyan LIU Fugui	2004	Science China(Technological Sciences)2004，47，3：	1
5	Fast neutron irradiation for Czochralski grown silicon显示文摘	XU Yueshcng LI Yangxian LIU Caichi	1994	Appl Phys Lett1994，65，22：	1
6	Growth of Czochralski silicon under magnetic field 显示文摘	Xu Yuesheng Liu Caichi Wang Haiyun	2004	Science in China Ser E Technological Sciences2004，47，1：	1
7	Fast neutron irradiation for CZ-Si 显示文摘	Xu Yuesheng Li Yangxian Liu Caichi	1994	Appl Phys Lett1994，65，：	1
8	Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon显示文摘The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.	LIU Caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong Qigang Zhou WANG Jing XIAO Qinghua	2006	Rare Metals2006，25，4：	1
9	The marangoni convection and the oxygen conectration in Czochralski-grown Silicon 显示文摘	Xu Yuesheng Liu Caichi Wang Haiyun	2003	J Crystal Growth2003，254，：	1
10	Formation and removement mechanism of haze defects on (111) p-type silicon wafer 显示文摘	Xu Yuesheng Li Yangxian Liu Caichi	1994	Rare Metals1994，13，1：	1
11	Determination of oxygen concertration in heavily Sb-doped silicon by means ofCERDA 显示文摘	Xu Yuesheng Liu Caichi Li Yangxian	1994	J Crystal Growth1994，144，：	1
12	Growth ofsemiconductor crystal under the equivalent micro-gravity 显示文摘	Xu Yuesheng Liu Caichi Wang Haiyun	2003	J Microelectronic Engineering2003，66，：	1
13	Determination of oxygen concentration in heavily Sb-doped silicon by means ofCERDA 显示文摘	Xu Yuesheng Liu Caichi Li Yangxian	1994	J Cryst Growth1994，，144：	1
14	Formation and Removement Mechanism of Haze defects on (111) p-type Silicon Wafer 显示文摘	Xu Yuesheng Li Yangxian Liu Caichi	1994	RareMetals1994，13，1：	1
15	Investigation of flow pattern defects in as-grown and rapid thermal annealed CZSi wafers 显示文摘	Zhang Jianfeng Liu Caichi Zhou Qigang	2004	Journal of Crystal Growth2004，262，：	1
16	The development of the study on selectively growth ofGaN显示文摘	ZHANG Wei LIU Caichi HAO Qiuyan	2007	Semicond Technol2007，32，2：	1
17	Study on the oxygen concentration reduction in heavily Sb-doped silicon 显示文摘	Liu Caichi Wang Hongmei Li Yangxian	1999	J Cryst Growth1999，，196：	1
18	Fast neutron irradiation for Czochralski growth silicon 显示文摘	Xu Yuesheng Li Yangxian Liu Caichi	1994	Appl Phys Lett1994，65，22：	1
19	Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon显示文摘The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.	LIU Caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong QigangZhou WANG Jing XIAO Qinghua	2006	北京科技大学学报2006，28，8：	0
20	Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells显示文摘The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrum response and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the Vos and Isc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is not be affected.	SUN Haizhi LIU Caichi HAO Qiuyan WANG Lijian	2006	Rare Metals2006，25，z1：	0

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