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		题名	作者	年代	出处	被引量
	1	Cadmium sulfide thin films growth by chemical bath deposition显示文摘Cadmium sulfide(Cd S) thin films have been prepared by a simple technique such as chemical bath deposition(CBD). A set of samples Cd S were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time(25 min) in order to investigate the effect of deposition temperature on Cd S films physical properties. The determination of growth activation energy suggests that at low temperature Cd S film growth is governed by the release of Cd^(2+) ions in the solution. The structural characterization indicated that the Cd S films structure is cubic or hexagonal with preferential orientation along the direction(111) or(002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 e V. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.	S.Hariech M.S.Aida J.Bougdira M.Belmahi G.Medjahdi D.Genève N.Attaf H.Rinnert	2018	Journal of Semiconductors2018，39，3：	2
	2	Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application显示文摘The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM), optical transmittance spectroscopy(UV–V) and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the(111) direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10~5 and 11 × 10~5 Ω·cm.	A.Derbali H.Saidi A.Attaf H.Benamra A.Bouhdjer N.Attaf H.Ezzaouia L.Derbali M.S.Aida	2018	Journal of Semiconductors2018，39，9：	1
	3	Electrical properties of Cu_4ZnSnS_2/ZnS heterojunction prepared by ultrasonic spray pyrolysis显示文摘Cu_2ZnSnS_4(CZTS)/ZnS heteroj unctions have been prepared by a successive deposition of ZnS and CZTS thin films by ultrasonic spray pyrolysis technique on glass substrates.The cupric chloride concentration has been varied in the starting solution in order to investigate its influence on device properties.CZTS/ZnS heterojunctions were characterized by recording their current-voltage characteristics at different temperatures.The obtained results exhibit a good rectifying behavior of the realized heterojunction.Analysis of these results yields saturation current,series resistance and ideality factor determination.From the activation energy of saturation current we inferred that the thermal emission through the barrier height is the dominant mechanism of the reverse current rather than the defects contribution.	S.Guitouni M.Khammar M.Messaoudi N.Attaf M.S.Aida	2016	Journal of Semiconductors2016，37，12：	0

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