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| 1 | The sprayed ZnO films: nanostructures and physical parameters显示文摘We synthesized the pure and indium-doped(IZO) ZnO films with a facile composition control spray pyrolysis route.The substrate temperature(T_s) and In-doping effects on the properties of as-grown films are investigated.The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a(002) preferential plane.It is revealed that the crystalline structure is improved with a substrate temperature of 350 ℃.Moreover,the morphology of as-grown films,analyzed by AFM,shows nanostructures that have grown along the c-axis.The(3×3 μm^2)area scanned AFM surface studies give the smooth film surface RMS < 40 nm.The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands.The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping.The band gap is a bit widened by In-doping,3.21 eV(ZnO)and 3.31 eV(IZO) and the resistivity is reduced from 385 to 8 Ω·m.An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films. | M.Benhaliliba A.Tiburcio-Silver A.Avila-Garcia A.Tavira Y.S.Ocak M.S.Aida C.E.Benouis | 2015 | Journal of Semiconductors2015，36，8： | 3 |
| 2 | Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis显示文摘Thin films of SnS_x,semiconductors,have been successfully synthesized by ultrasonic spray pyrolysis technique,using two precursors namely:tin(II)chloride and tin(IV)chloride,respectively.The solutions were prepared by the dilution of different Sn molarities of the two precursors separately.The precursor molarities were varied from 0.04 to 0.07 mol/L,whereas that of S was fixed at 0.1 mol/L.The present work focuses on the effect of the different precursor’s molarities on the nature and the properties of the prepared thin films in order to optimize the growth conditions.X-ray diffraction analysis reveals that the precursor’s molarities alter the grain size of the prepared films,which varied from 8 to 14 nm and from 12 to 16 nm,according to the used precursor.The films analysis by SEM,shows that the SnS_2 films are more dense and smooth than the SnS films.The composition of the elements is analysed with an EDX spectrometer,and the obtained result for M_(sn)=0:07 mol/L indicates that the atomic ratio of Sn to S is 51.57:48:43 and 36:64 for films synthesized from the first and second precursors respectively.Electrical measurements show that the conductivity behavior depends on the used precursors and their molarities. | Z.Hadef K.Kamli A.Attaf M.S.Aida B.Chouial | 2017 | Journal of Semiconductors2017，38，6： | 3 |
| 3 | ZnS thin films deposition by thermal evaporation for photovoltaic applications显示文摘Zn S thin films were deposited on glass substrates by thermal evaporation from millimetric crystals of Zn S.The structural,compositional and optical properties of the films are studied by X-ray diffraction,SEM microscopy,and UV–VIS spectroscopy.The obtained results show that the films are pin hole free and have a cubic zinc blend structure with(111) preferential orientation.The estimated optical band gap is 3.5 e V and the refractive index in the visible wavelength ranges from 2.5 to 1.8.The good cubic structure obtained for thin layers enabled us to conclude that the prepared Zn S films may have application as buffer layer in replacement of the harmful Cd S in CIGS thin film solar cells or as an antireflection coating in silicon-based solar cells. | K.Benyahia A.Benhaya M.S.Aida | 2015 | Journal of Semiconductors2015，36，10： | 2 |
| 4 | Cadmium sulfide thin films growth by chemical bath deposition显示文摘Cadmium sulfide(Cd S) thin films have been prepared by a simple technique such as chemical bath deposition(CBD). A set of samples Cd S were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time(25 min) in order to investigate the effect of deposition temperature on Cd S films physical properties. The determination of growth activation energy suggests that at low temperature Cd S film growth is governed by the release of Cd^(2+) ions in the solution. The structural characterization indicated that the Cd S films structure is cubic or hexagonal with preferential orientation along the direction(111) or(002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 e V. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells. | S.Hariech M.S.Aida J.Bougdira M.Belmahi G.Medjahdi D.Genève N.Attaf H.Rinnert | 2018 | Journal of Semiconductors2018，39，3： | 2 |
| 5 | Properties of n-type SnO_2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications显示文摘Transparent conducting n-type SnO_2 semiconductor films were fabricated by employing an inexpensive,simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures(300, 350, 400,450 and 500℃). The structural studies reveal that the SnO_2 films are polycrystalline at 350, 400, 450, 500℃ with preferential orientation along the(200) and(101) planes, and amorphous at 300℃. The crystallite size of the films was found to be in the range of 20.9–72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 e V respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4102 cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO_2 films for solar cells,sensors and opto-electronic applications. | H.Bendjedidi A.Attaf H.Saidi M.S.Aida S.Semmari A.Bouhdjar Y.Benkhetta | 2015 | Journal of Semiconductors2015，36，12： | 1 |
| 6 | Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application显示文摘The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM), optical transmittance spectroscopy(UV–V) and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the(111) direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10~5 and 11 × 10~5 Ω·cm. | A.Derbali H.Saidi A.Attaf H.Benamra A.Bouhdjer N.Attaf H.Ezzaouia L.Derbali M.S.Aida | 2018 | Journal of Semiconductors2018，39，9： | 1 |
| 7 | Films surface temperature calculation during growth by sputtering technique显示文摘A calculation of film surface temperature during thin films growth by sputtering technique is proposed.The calculation procedure is based on the conversion into heat of the total flux energy of species impinging the film surface during growth. The results indicate that the film's surface temperature depends drastically on material substrate thermal conductivity and thickness on one hand, and the plasma conditions namely the discharge power on the other. The predicted film surface temperatures were used to explain the microstructure evolution of hydrogenated amorphous silicon(a-Si:H) thin films deposited by reactive radio frequency(RF) sputtering on different substrates. | F.Khelfaoui M.S.Aida | 2017 | Journal of Semiconductors2017，38，9： | 0 |
| 8 | Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications显示文摘Control of the electronic parameters on a novel metal–oxide–semiconductor(MOS)diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height(BH),series resistance,and charge carrier density are extracted from the current–voltage(I–V)and the capacitance–voltage(C–V)characteristics.The properties of the MOS diode based on 4%,6% and 8% indium doped tin oxide are largely studied.The Ag/SnO_2/nSi/Au MOS diode is fabricated by spray pyrolysis route,at 300℃ from the In-doped SnO_2layer.This was grown onto n-type silicon and metallic(Au)contacts which were made by thermal evaporation under a vacuum@10^(-5)Torr and having a thickness of 120 nm and a diameter of 1 mm.Determined by the Cheung-Cheung approximation method,the series resistance increases(334–534Ω)with the In doping level while the barrier height(BH)remains constant around 0.57 V.The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500Ω.The indium doping level influences on the characteristics of Ag/SnO_2:In/Si/Au MOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material. | M.Benhaliliba C.E.Benouis M.S.Aida A.Ayeshamariam | 2017 | Journal of Semiconductors2017，38，6： | 0 |
| 9 | Electrical properties of Cu_4ZnSnS_2/ZnS heterojunction prepared by ultrasonic spray pyrolysis显示文摘Cu_2ZnSnS_4(CZTS)/ZnS heteroj unctions have been prepared by a successive deposition of ZnS and CZTS thin films by ultrasonic spray pyrolysis technique on glass substrates.The cupric chloride concentration has been varied in the starting solution in order to investigate its influence on device properties.CZTS/ZnS heterojunctions were characterized by recording their current-voltage characteristics at different temperatures.The obtained results exhibit a good rectifying behavior of the realized heterojunction.Analysis of these results yields saturation current,series resistance and ideality factor determination.From the activation energy of saturation current we inferred that the thermal emission through the barrier height is the dominant mechanism of the reverse current rather than the defects contribution. | S.Guitouni M.Khammar M.Messaoudi N.Attaf M.S.Aida | 2016 | Journal of Semiconductors2016，37，12： | 0 |
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