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| 1 | Properties of n-type SnO_2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications显示文摘Transparent conducting n-type SnO_2 semiconductor films were fabricated by employing an inexpensive,simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures(300, 350, 400,450 and 500℃). The structural studies reveal that the SnO_2 films are polycrystalline at 350, 400, 450, 500℃ with preferential orientation along the(200) and(101) planes, and amorphous at 300℃. The crystallite size of the films was found to be in the range of 20.9–72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 e V respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4102 cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO_2 films for solar cells,sensors and opto-electronic applications. | H.Bendjedidi A.Attaf H.Saidi M.S.Aida S.Semmari A.Bouhdjar Y.Benkhetta | 2015 | Journal of Semiconductors2015，36，12： | 1 |
| 2 | Structural, optical and electrical properties of Sn_xS_y thin films grown by spray ultrasonic显示文摘Tin sulfide(Snx Sy/ thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃.The influence of deposition time tD2, 4, 6, 8 and 10 min on different properties of thin films, such as(XRD),photoluminescence(PL) and(UV) spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS2, SnS, and Sn2S3 phases, but the most prominent one is SnS2. The results of the(UV) spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity(ρ) values of SnxSy films have changed from 8.1×104to 1.62Ω·cm with deposition time. | I.B.Kherchachi A.Attaf H.Saidi A.Bouhdjer H.Bendjedidi Y.Benkhetta R.Azizi | 2016 | Journal of Semiconductors2016，37，3： | 1 |
| 3 | Correlation between the structural, morphological, optical, and electrical properties of In_2O_3 thin films obtained by an ultrasonic spray CVD process显示文摘Indium oxide(In_2O_3) thin films are successfully deposited on glass substrate at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution;the physical properties of these films are characterized by XRD,SEM,and UV-visible.XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the(222) plane when the deposition time changes from 4 to 10 min,but when the deposition time equals13 min we found that the majority of grains preferred the(400) plane.The surface morphology of the In_2O_3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation.The transmittance improvement of In_2O_3 films was closely related to the good crystalline quality of the films.The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min.The film thickness was varied between 395 and 725 nm.The film grown at 13 min is found to exhibit low resistivity(10^(-2) Ω·cm),and relatively high transmittance(~93%). | A.Bouhdjer A.Attaf H.Saidi H.Bendjedidi Y.Benkhetta I.Bouhaf | 2015 | Journal of Semiconductors2015，36，8： | 1 |
| 4 | Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application显示文摘The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM), optical transmittance spectroscopy(UV–V) and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the(111) direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10~5 and 11 × 10~5 Ω·cm. | A.Derbali H.Saidi A.Attaf H.Benamra A.Bouhdjer N.Attaf H.Ezzaouia L.Derbali M.S.Aida | 2018 | Journal of Semiconductors2018，39，9： | 1 |
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