| 2 | Defect Accumulation and Its Effect on Photoluminescence in GaN Bombarded with Low-energy Heavy Ions显示文摘Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with | ZhangChonghong SongYin DuanJinglai SunYoumei YaoCunfeng MaHongji NieRui T.Shibayama HongChen | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
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