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| 1 | Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal—an explanation of our TEM results显示文摘In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of helium-implanted 4H-SiC.1. Sharp boundaries of the bubble layer-helium bubbles were formed in a well-defined depth region, | ZhangChonghong S.E.Donnelly J.H.Evans | 2002 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2002，，1： | 0 |
| 2 | A TEM Study of Microstructures in Chlorine-implanted Silicon显示文摘The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2. | J.H.Evans ZhangChonghong WangZhiguang T.Shibayama K.Sakaguchi H.Takahashi V.M.Vishnyakov S.E.Donnelly | 2002 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2002，，1： | 0 |
| 3 | A Study of Microstructures in Helium-implanted 4H-SiC by RBS-channeling and TEM显示文摘Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of this material in nuclear energy devices or for the proposed getting technique of electronic devices of silicon carbide. Much less is known about helium behavior in silicon carbide than in silicon and metals. Our recent study with transmission electron microscopy (TEM) indicated that the formation behavior of helium precipitates i.e. | ZhangChonghong SunYoumei SongYing DuanJinglai T.Shibayama K.Sakaguchi H.Takahashi ShenDingyu | 2002 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2002，，1： | 0 |
| 4 | Raman Analysis of 30 MeV C_(60) Irradiated N-doped Carbon显示文摘In the present work, we used the technique of “low energy ion implantation + swift; heavy ion irradiation ”to investigate huge electronic excitations induced modification in N-doped graphite-like-carbon. | WangZhiguang A.Dunlop ZhaoZhiming SongYin JinYunfan ZhangChonghong LiuJie SunYoumei | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
| 5 | Evidence of New Structure Formation in C-doped SiO_2 after 4.57 MeV/u Pb Ion Irradiation显示文摘Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations | WangZhiguang ZhaoZhiming SongYin JinYunfan ZhangChonghong LiuJie SunYoumei A.Benyagoub M.Toulemonde F.Levesque H.Takahashi T.Shibayama N.Sakagushi | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
| 6 | RBS Analysis of Damage Evolution in Helium-implanted 4H-SiC显示文摘The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation. | ZhangChonghong SongYin DuanJinglai SunYoumei MaHongji NieRui ShenDingyu | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
| 7 | Defect Accumulation and Its Effect on Photoluminescence in GaN Bombarded with Low-energy Heavy Ions显示文摘Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with | ZhangChonghong SongYin DuanJinglai SunYoumei YaoCunfeng MaHongji NieRui T.Shibayama HongChen | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
| 8 | Defect Structures in 4H-SiC Irradiated with Highly-energetic ^(20)Ne^(4+) and ^(129)Xe^(26+) Ions显示文摘The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of | ZhangChonghong SunYoumei T.Shibayama LiuJie WangZhiguang SongYin DuanJinglai ZhaoZhiming YaoCunfeng WangYing HouMingdong JinYunfan | 2003 | 近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1： | 0 |
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