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		题名	作者	年代	出处	被引量
	1	A Study of Microstructures in Helium-implanted 4H-SiC by RBS-channeling and TEM显示文摘Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of this material in nuclear energy devices or for the proposed getting technique of electronic devices of silicon carbide. Much less is known about helium behavior in silicon carbide than in silicon and metals. Our recent study with transmission electron microscopy (TEM) indicated that the formation behavior of helium precipitates i.e.	ZhangChonghong SunYoumei SongYing DuanJinglai T.Shibayama K.Sakaguchi H.Takahashi ShenDingyu	2002	近代物理研究所和兰州重离子加速器实验室年报:英文版2002，，1：	0
	2	RBS Analysis of Damage Evolution in Helium-implanted 4H-SiC显示文摘The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation.	ZhangChonghong SongYin DuanJinglai SunYoumei MaHongji NieRui ShenDingyu	2003	近代物理研究所和兰州重离子加速器实验室年报:英文版2003，，1：	0

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