3篇
您的检索式：作者名="Ruoshi Hao"
|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Genomic and transcriptomic analysis unveils population evolution and development of pesticide resistance in fall armyworm Spodoptera frugiperda显示文摘The fall armyworm(FAW),Spodoptera frugiperda,is a destructive pest native to America and has recently become an invasive insect pest in China.Because of its rapid spread and great risks in China,understanding of FAW genetic background and pesticide resistance is urgent and essential to develop effective management strategies.Here,we assembled a chromosome-level genome of a male FAW(SFynMstLFR)and compared re-sequencing results of the populations from America,Africa,and China.Strain identification of 163 individuals collected from America,Africa and China showed that both C and R strains were found in the American pop-ulations,while only C strain was found in the Chinese and African populations.Moreover,population geno-mics analysis showed that populations from Africa and China have close relationship with significantly genetic differentiation from American populations.Taken toge-ther,FAWs invaded into China were most likely origi-nated from Africa.Comparative genomics analysis displayed that the cytochrome p450 gene family is extremely expanded to 425 members in FAW,of which 283 genes are specific to FAW.Treatments of Chinese populations with twenty-three pesticides showed the variant patterns of transcriptome profiles,and several detoxification genes such as AOX,UGT and GST spe-cially responded to the pesticides.These findings will be useful in developing effective strategies for manage-ment of FAW in China and other invaded areas. | Furong Gui Tianming Lan Yue Zhao Wei Guo Yang Dong Dongming Fang Huan Liu Haimeng Li Hongli Wang Ruoshi Hao Xiaofang Cheng Yahong Li Pengcheng Yang Sunil Kumar Sahu Yaping Chen Le Cheng Shuqi He Ping Liu Guangyi Fan Haorong Lu Guohai Hu Wei Dong Bin Chen Yuan Jiang Yongwei Zhang Hanhong Xu Fei Lin Bernard Slippers Alisa Postma Matthew Jackson Birhan Addisie Abate Kassahun Tesfaye Aschalew Lemma Demie Meseret Destaw Bayeleygne Dawit Tesfaye Degefu Feng Chen Paul K.Kuria Zachary M.Kinyua Tong-Xian Liu Huanming Yang Fangneng Huang Xin Liu Jun Sheng Le Kang | 2022 | Protein & Cell2022，13，7： | 2 |
| 2 | Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells显示文摘The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells(MQWs)structure,to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN,as well as to enhance the light output.The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses.Whereafter,the InGaN films were etched into nano-patterned films.Compared with the green MQWs structure grown on untreated InGaN film,which on nano-patterned InGaN had better luminous performance.Among them the MQWs performed best when 3 nm thick Ni film was used as mask,because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output. | Ruoshi Peng Shengrui Xu Xiaomeng Fan Hongchang Tao Huake Su Yuan Gao Jincheng Zhang Yue Hao | 2023 | Journal of Semiconductors2023，44，4： | 0 |
| 3 | Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids显示文摘InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence(PL). The InGaN/GaN MQW structure grown on the GaN template with SiO_2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity.Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls. | DU JinJuan XU ShengRui PENG RuoShi FAN XiaoMeng ZHAO Ying TAO HongChang SU HuaKe NIU MuTong ZHANG JinCheng HAO Yue | 2021 | Science China(Technological Sciences)2021，64，7： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员