| 1 | Properties of n-type SnO_2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications显示文摘Transparent conducting n-type SnO_2 semiconductor films were fabricated by employing an inexpensive,simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures(300, 350, 400,450 and 500℃). The structural studies reveal that the SnO_2 films are polycrystalline at 350, 400, 450, 500℃ with preferential orientation along the(200) and(101) planes, and amorphous at 300℃. The crystallite size of the films was found to be in the range of 20.9–72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 e V respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4102 cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO_2 films for solar cells,sensors and opto-electronic applications. | H.Bendjedidi A.Attaf H.Saidi M.S.Aida S.Semmari A.Bouhdjar Y.Benkhetta | 2015 | Journal of Semiconductors2015，36，12： | 1 |
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