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7篇 您的检索式：作者名="SHI Wanquan"

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		题名	作者	年代	出处	被引量
	1	显示文摘	Liu Yuzhen Shi Wanquan Chen Zhijian	1998	Chin J Semicond1998，19，：	1
	2	Study of pho- toluminescence spectra of Si-rich SiNx films显示文摘	Liu Yuzhen Zhou Yuqin Shi Wanquan	2004	Mater Lett2004，58，19：	1
	3	A Corporate Credit Rating Model Using Support Vector Domain Combined with Fuzzy Clustering Algorithm显示文摘	Xuesong Guo Zhengwei Zhu Jia Shi Wanquan Liu	2012	Mathematical Problems in Engineering2012，，：	1
	4	HIGH ENERGY NITROGEN ION IMPLANTED SOI TECHNOLOGY显示文摘Buried Si₃N₄ layer is formed by hitrogen ion implanted silicoh with high energy (400Key) and high dose (1×10¹⁸/cm²). The unimplanted single crystal zone is used as seed crystal. Seed inducing recrystallization is carried out by autoscanning Nd: YAG CW laser annealing. We got a large area SOI structure sample.	Shi Wanquan, Liu Shixiang, Liu Xuejun and Wu Yong (Graduate School, Academia Sinica)	1989	中国科学院研究生院学报1989，6，2：	0
	5	RAPID THERMAL ANNEALING OF As ION IMPLANTED SILICON显示文摘As ion implanted damage of silicon was removed by Rapid ThermalAnnealing(RTA)using Model KST-1 RTA appakatus.Removal ofdamage and dopant redistribution were investigated by RutherfordBackscattering Spectra(RBS)and Extended Resistance.Sheet resistanceand carrier Hall mobility was mesaured by Van der Panw method.	Liu Shixiang Liu Xuejun Shi Wanquan (Graduate School,USTC,Academia Sinica)	1989	中国科学院研究生院学报1989，6，1：	0
	6	Experimental Research of Superconducting Mechanism on High T_c Superconductors显示文摘This paper piled some key experiments related with theoreticalresearch of mechanism on high T_c superconductivity and pointed out theimportance of experimental research to present raw data for theoreticalresearch of mechanism on high T_c superconductivity.	Shi Wanquan International Centre for Theoretical Physics, Trieste, Italy. Graduate School of Academia Sinica. P. O. Box 3908, Beijing. P. R. China.	1990	中国科学院研究生院学报1990，7，1：	0
	7	Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon显示文摘We have studied the light induced rapid thermal diffusion of boron atom in silicon.The samples were heated by the rapid thermal processor.We have carried out spreading resistance and deep level transient spectroscopy(DLTS)measurements.The impurity distribution profile is much shallower and steeper than that of conventional thermal diffusion and the diffusion depth can be con-trolled to 0.1μm.Several peaks in the deep level transient spectra were detected and the density of these defects ranges from 0.5 × 10^(12) to 5.6 × 10^(12)/cm^(3).The passivation and annihilation of these defects have been studied.We have also made the planar diode whose diameter is 500μm.The reverse current and the back breakdown voltage of the planar diode are 10^(-9) A and 80V respectively.	SHI Wanquan HOU Qingrun LIU Xuejun LIU Shixiang FU Zhengqing LU Liwu LI Yuanjing	1992	Chinese Physics Letters1992，9，9：	0

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