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| 1 | Numerical study on effects of the cofferdam area in liquefied natural gas storage tank on the leakage and diffusion characteristics of natural gas显示文摘The leakage and diffusion characteristics of natural gas were investigated in the condition of the leakage of liquefied natural gas(LNG) in the storage tank.Fluent was adopted to simulate the process in a series of three-dimension unsteady state calculations.The effects of different heights of the cofferdam(1.0 m, 2.0 m and 3.0 m),wind directions,ambient temperature,leakage location,leakage volume on the diffusion process of natural gas were investigated.The diffusion characteristics of the natural gas clouds over cofferdam were found.Under windless condition,when the gas clouds met,the gas clouds rose due to the collision,which made them easier to cross the cofferdam and spread out.The higher the ambient temperature was,the higher the gas concentration around the cofferdam was,and the smaller the gas concentration difference was.When the leakage occurred,the higher coffe rdam was more beneficial to delay the outward diffusion of gas clouds.However,when the leaka ge stopped,the higher cofferdam went against the dissipation of gas clouds.Under windy condition,the time to form stable leakage flow field was faster than that of windless,and the lower cofferdam further reduced this time.Therefore,considering the effect of barrier and dissipation,it was suggested that the rational height of cofferdam should be designed in the range of 1.0 m to 2.0 m.In case of emergency,the leakage of gas should be deduced reasonably by combining the measurement of gas concentration with the rolling of gas clouds.When windless,the leakage area should be entered between the overflows of gas clouds. | Zirong Lin Shuangfeng Wang Shuxun Fu Jiepeng Huo | 2021 | Chinese Journal of Chemical Engineering2021，34，1： | 2 |
| 2 | Possible Pathogenesis of Painful Intervertebral Disc Degeneration显示文摘 | Baogan Peng Jianhua Hao Shuxun Hou Wenwen Wu Duyin Jiang Xiaobing Fu Yi Yang | 2006 | Spine2006，，5： | 1 |
| 3 | Partitioning of minerals and elements during preparation of Taixi coal, China 显示文摘 | Wang Wenfeng Qin Yong Sang Shuxun Jiang Bo Guo Yinghai Zhu Yanming Fu Xuehai | 2006 | Fuel2006，85，1： | 1 |
| 4 | Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device显示文摘Gallium nitride high electron mobility transistor(GaN HEMT)devices have become critical components in the manufacturing of high-performance radio frequency(RF)or power electronic modules due to their superior characteristics,such as high electron saturation speeds and high power densities.However,the high heat characteristics of GaN HEMTs make device level cooling a critical problem to solve since performance degradation or even failure may occur under high temperatures.In this paper,we proposed a 2.5D integration method with devicelevel microchannel direct cooling for a high-power GaN HEMT device.To demonstrate this technological concept,a multigate GaN HEMT device featuring a gate length/width/source drain spacing of 0.5μm/300μm/6μm that underwent in-house backside thinning and metallization was used as the test vehicle.A high-resistivity silicon(HR Si)interposer embedded with four-layer microchannels was designed,having widths/pitches of 30μm/30μm at the top microchannel.The high-power GaN HEMT device was soldered on a Si interposer embedded with open microchannels for heat dissipation.A pair of GSG Pad chips was soldered simultaneously to display the capacity for the heterogeneous integration of other chip types.Thermal property evaluation was conducted with experiments and simulations.The test results showed that the maximum surface temperature of the GaN HEMT device decreased to 93.8°C when it experienced a heat dissipation density of 32 kW/cm^(2) in the gate finger area and an average heat dissipation density of 5 kW/cm^(2) was found in the active area with the DI water coolant at a flow rate of 3 mL/min.To our knowledge,among recently reported works,this finding was the best cooling capacity of heterogeneously integrated microchannels for GaN HEMT devices.In addition,this technology was scalable regarding the numbers of gate fingers or GaN HEMT devices. | Tingting Lian Yanming Xia Zhizheng Wang Xiaofeng Yang Zhiwei Fu Xin Kong Shuxun Lin Shenglin Ma | 2022 | Microsystems & Nanoengineering2022，8，6： | 0 |
| 5 | Epidemiological characteristics and relative factor of hospital death cases with road traffic trauma显示文摘Objective: To investigate the epidemiological characteristics and relative factor about hospital death in patients with road traffic trauma. Methods: The age, sex, road-use category, sites of injury, injury severity scale of 159 hospital death cases in 2436 cases with road traffic trauma were observed, and the relation between the causes of death and time elapsed after injury was also studied with likelihood ratio Chi-square test. | ZHANG Yadong Hou Shuxun Yao Yongming Sheng Zhiyong Wang Fu Wang Yubin Zheng Weijia | 2001 | 感染.炎症.修复2001，2，2： | 0 |
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