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| 1 | 化学气相沉积法在液态金属上快速生长石墨烯单晶(英文)显示文摘实现石墨烯大单晶的快速生长对于其未来在光电及电学器件领域的应用十分必要.目前已报道的在多晶金属衬底上生长石墨烯单晶的工作通常是通过降低前驱体供应量从而抑制成核来实现的,而这会显著降低成核以及后续生长的速度.新兴的液态金属催化剂具有准原子级平滑的表面和高扩散速率.理论上,液态金属是一个天然理想的基底,可同时实现低密度成核和快速生长.但截至目前,尚无工作探讨液态金属上石墨烯单晶的快速生长.在本研究中,我们成功地在液态铜表面实现了毫米级高质量石墨烯单晶的生长.液态铜中丰富的自由电子能加速石墨烯的成核,且其各向同性的平滑表面能显著抑制成核,使得成核密度较低.更重要的是,由于液态铜优异的可流动性,前驱体碳原子能实现快速扩散,这极大促进了石墨烯的生长,最高速率可达79μm s^-1.我们希望这一关于液态铜体系中石墨烯生长速率的研究能丰富研究者们对液态金属上二维材料生长行为的认知.我们也相信利用液态金属来实现石墨烯快速生长的策略能被拓展至其他二维材料,由此来促进它们在未来光电以及电学器件领域的应用. | 郑舒婷 曾梦琪 曹慧 张涛 高晓雯 肖遥 付磊 | 2019 | Science China Materials2019，62，8： | 8 |
| 2 | Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In_(2)Se_(3) for Flexible Broadband Photodetectors显示文摘The controllable growth of two-dimensional(2D)semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental efect of grain boundaries on device performance but has proven to be challenging.Here,we analyze the precursor concentration on the substrate surface which signifcantly infuences nucleation density in a vapor deposition growth process and design a confned micro-reactor to grow 2D In_(2)Se_(3) with large domain sizes and high quality.Te uniqueness of this confned micro-reactor is that its size is∼102-103 times smaller than that of a conventional reactor.Such a remarkably small reactor causes a very low precursor concentration on the substrate surface,which reduces nucleation density and leads to the growth of 2D In_(2)Se_(3) grains with sizes larger than 200�m.Our experimental results show large domain sizes of the 2D In_(2)Se_(3) with high crystallinity.Te fexible broadband photodetectors based on the as-grown In_(2)Se_(3) show rise and decay times of 140 ms and 25 ms,efcient response(5.6 A/W),excellent detectivity(7×10^(10) Jones),high external quantum efciency(251%),good fexibility,and high stability.Tis study,in principle,provides an efective strategy for the controllable growth of high quality 2D materials with few grain boundaries. | Lei Tang Changjiu Teng Yuting Luo Usman Khan Haiyang Pan Zhengyang Cai Yue Zhao Bilu Liu Hui-Ming Cheng | 2019 | Research2019，，1： | 7 |
| 3 | Experimental realization of honeycomb borophene显示文摘We report the successful preparation of a purely honeycomb,graphene-like borophene,by using an Al(11 1) surface as the substrate and molecular beam epitaxy(MBE) growth in ultrahigh vacuum.Scanning tunneling microscopy(STM) images reveal perfect monolayer borophene with planar,non-buckled honeycomb lattice similar as graphene.Theoretical calculations show that the honeycomb borophene on Al(1 1 1) is energetically stable.Remarkably,nearly one electron charge is transferred to each boron atom from the Al(1 1 1) substrate and stabilizes the honeycomb borophene structure,in contrast to the negligible charge transfer in case of borophene/Ag(1 1 1).The existence of honeycomb 2 D allotrope is important to the basic understanding of boron chemistry,and it also provides an ideal platform for fabricating boron-based materials with intriguing electronic properties such as Dirac states. | Wenbin Li Longjuan Kong Caiyun Chen Jian Gou Shaoxiang Sheng Weifeng Zhang Hui Li Lan Chen Peng Cheng Kehui Wu | 2018 | Science Bulletin2018，63，5： | 7 |
| 4 | 高响应度光电检测器件石墨烯-MoS_(2)垂直异质结的制备显示文摘石墨烯(Gr)及其他类石墨烯的二维(2D)材料,包括六方氮化硼(h-BN)、过渡金属硫族化合物(TMDCs)等,自发现以来便以其独特的物理性质受到了研究人员的青睐。由这些二维层状材料相互堆叠形成的范德瓦尔斯异质结(vdW)因具有很多优异的性质而成为最近的研究热点。本课题组首先制备了大面积、高质量的单层石墨烯及二硫化钼(MoS_(2)),然后将石墨烯薄膜利用光刻及等离子体刻蚀技术制作成石墨烯条带,最后将MoS_(2)转移至石墨烯条带上构成石墨烯-MoS_(2)垂直异质结(Gr-MoS_(2))。测试后发现,基于Gr-MoS_(2)垂直异质结的光电探测器的光电流为单层MoS_(2)器件的250倍,光响应度为单层MoS_(2)器件的750倍。光电性能的提高证明了这种由石墨烯和MoS_(2)堆叠而成的异质结在将来的光电器件及光电子集成电路中具有广阔的应用前景。 | 姚杰 缪鑫 王帅 顾嫣芸 高铭良 万茜 | 2021 | 激光与光电子学进展2021，58，15： | 6 |
| 5 | Intelligent identification of two-dimensional nanostructures by machine-learning optical microscopy显示文摘Two-dimensional (2D)materials and their heterostructures,with wafer-scale synthesis methods and fascinating properties,have attracted significant interest and triggered revolutions in corresponding device applications.However,facile methods to realize accurate,intelligent,and large-area characterizations of these 2D nanostructures are still highly desired.Herein,we report the successful application of machine-learning strategy in the optical identification of 2D nanostructures.The machine-leaming optical identification (MOI)method endows optical microscopy with intelligent insight into the characteristic color information of 2D nanostructures in the optical photograph.The experimental results indicate that the MOI method enables accurate,intelligent,and large-area characterizations of graphene,molybdenum disulfide,and their heterostructures, including identifications of the thickness,existence of impurities,and even stacking order.With the convergence of artificial intelligence and nanoscience,this intelligent identification method can certainly promote fundamental research and wafer-scale device applications of 2D nanostructures. | Xiaoyang Lin Zhizhong Si Wenzhi Fu Jianlei Yang Side Guo Yuan Cao Jin Zhang Xinhe Wang Peng Liu Kaili Jiang Weisheng Zhao | 2018 | Nano Research2018，11，12： | 5 |
| 6 | Vapor-phase growth of high-quality wafer-scale two-dimensional materials显示文摘Emerging two-dimensional(2D)materials have stimulated tremendous scientific and industrial interests due to their diverse and tunable physical,chemical,and mechanical properties.The scalable production of high-quality wafer-scale 2D materials has become significantly essential to bring us closer to practical industrial applications,particularly in electronic devices.Vapor-phase growth provides attractive opportunities for the synthesis of large-area and high-quality 2D materials.In this review,we will emphasize vapor-phase growth strategies from three aspects,including suppressing nucleation,seamless stitching,and evolutionary selection growth.We discuss the general understanding of the related fundamental mechanism and specific parameter optimization from precursors and substrate design to the adjusting of growth parameters(temperature and pressure).Meanwhile,we present other strategies to produce various kinds of wafer-scale 2D materials.Finally,we conclude the current challenges and future directions in this developing field.This work may inspire researchers to better design routes in the synthesis of wafer-scale 2D materials with high quality. | Xin Tong Keli Liu Mengqi Zeng Lei Fu | 2019 | InfoMat2019，1，4： | 5 |
| 7 | Wafer-scale vertical van der Waals heterostructures显示文摘Wafer-scale van der Waals heterostructures(vdWHs),benefitting from the rich diversity in materials available and stacking geometry,precise controllability in devices structure and performance,and unprecedented potential in practical application,have attracted considerable attention in the field of twodimensional(2D)materials.This article reviews the state-of-the-art research activities that focus on wafer-scale vdWHs and their(opto)electronic applications.We begin with the preparation strategies of vdWHs with wafer size and illustrate them from four key aspects,that is,mechanical-assembly stack,successive deposition,synchronous evolution,and seeded growth.We discuss the fundamental principle,underlying mechanism,advantages,and disadvantages for each strategy.We will then review the applications of large-area vdWHs based devices in electronic,optoelectronic and flexible devices field,unveiling their promising potential for practical application.Ultimately,we will demonstrate the challenges they face and provide some viable solutions on waferscale heterostructure synthesis and device fabrication. | Lixin Liu Tianyou Zhai | 2021 | InfoMat2021，3，1： | 5 |
| 8 | Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays显示文摘The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on singlecrystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel(Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the Cu Ni alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition(CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays(LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for highperformance electronics and optoelectronics that are compatible with wafer process. | Bing Deng Zhaowei Xin Ruiwen Xue Shishu Zhang Xiaozhi Xu Jing Gao Jilin Tang Yue Qi Yani Wang Yan Zhao Luzhao Sun Huihui Wang Kaihui Liu Mark H. Rummeli Lu-Tao Weng Zhengtang Luo Lianming Tong Xinyu Zhang Changsheng Xie Zhongfan Liu Hailin Peng | 2019 | Science Bulletin2019，64，10： | 4 |
| 9 | Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications显示文摘Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices.The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries;however,currently presented as a significant challenge.Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions,controllable and uniform thicknesses,large crystal domains and minimum defects.In this review,recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined.Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised,and advantages and disadvantages of each approach considering ease of the synthesis,defects,grain sizes and uniformity are discussed. | Ali Zavabeti Azmira Jannat Li Zhong Azhar Ali Haidry Zhengjun Yao Jian Zhen Ou | 2020 | Nano-Micro Letters2020，12，5： | 4 |
| 10 | 学科编辑助力期刊影响力提升的策略与实践——以Science Bulletin为例显示文摘【目的】探讨如何从编辑自身做起,促进我国英文科技期刊影响力提升的有效途径。【方法】以Science Bulletin为例,归纳总结学科编辑在围绕如何让编委会'动'起来、如何加强专业服务意识并提升其服务能力、拓宽传播渠道3个方面展开的各项实践探索。【结果】经过6年多的发展,Science Bulletin'老刊'改革成效显著:学术影响力有了跨越式提升,国际影响逐步扩大。其中,优势学科的带动发挥了重要作用。【结论】学科编辑应从日常重点工作入手,按照期刊的新定位、新目标调整工作思路并努力实践,助力期刊转型,实现影响力提升。 | 邹文娟 安瑞 肖鸣 陈立翠 | 2021 | 中国科技期刊研究2021，32，12： | 3 |
| 11 | 低维纳米结构材料的合成及其研究进展显示文摘介绍了当前低维纳米结构材料制备方法及研究发展动态,描述了低维纳米结构材料的工作原理及技术发展现状,阐述了低维纳米结构材料的合成工艺,分析了低维纳米结构材料合成技术的研究进展。通过分析对今后低维纳米结构材料的重点研究方向进行了展望,指出了未来探索合成尺寸、结构和物性可控的新型低维纳米结构材料将成为纳米科技领域的重要研究方向之一。 | 任蕊 曹晨茜 周晓慧 李芬芬 李孟君 王伟民 | 2023 | 应用化工2023，52，2： | 2 |
| 12 | 面向微电子应用的二维过渡金属硫族化合物制备进展显示文摘二维原子晶体材料所独有的结构特性带来了诸多优异的性质.与石墨烯相比,二维过渡金属硫族化合物(TMDs)拥有不同大小且可调控的带隙,在微电子和光电器件领域有着广阔的应用前景.本文对二维TMDs材料'自上而下'和'自下而上'的制备方法进行了总结,对比了机械剥离、液相剥离和化学气相沉积等常见制备技术,并归纳了各自的优缺点.同时基于未来晶圆级二维TMDs器件,重点介绍了化学气相沉积法及其面向应用需要解决的问题.最后总结了二维TMDs材料在微电子器件应用中的研究进展. | 许浒 廖付友 郭仲勋 郭晓娇 周鹏 包文中 张卫 | 2017 | 科学通报2017，62，36： | 2 |
| 13 | Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides显示文摘Two dimensional transition metal dichalcogenides(TMDCs)have attracted much interest and shown promise in many applications.However,it is challenging to obtain uniform TMDCs with clean surfaces,because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process.Here,we report a new growth approach called’dissolution-precipitation’(DP)growth,where the metal sources are sealed inside glass substrates to control their feeding to the reaction.Noteworthy,the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface,and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction.This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates.The DP growth works well for a large variety of TMDCs and their alloys,providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source. | Zhengyang Cai Yongjue Lai Shilong Zhao Rongjie Zhang Junyang Tan Simin Feng Jingyun Zou Lei Tang Junhao Lin Bilu Liu Hui-Ming Cheng | 2021 | National Science Review2021，8，3： | 2 |
| 14 | A brief overview on synthesis and applications of graphene and graphene-based nanomaterials显示文摘Graphene is a remarkable material with great potential in many applications due to its chemical and physical properties.In this review we briefly present the recent research progress(2016-2018)in graphene and graphene-based nanomaterials synthesis and discuss the practical aspects of using the materials produced via these methods for different graphene-based applications. | Maria COROS Florina POGACEAN Lidia MAGERUSAN Crina SOCACI Stela PRUNEANU | 2019 | Frontiers of Materials Science2019，13，1： | 2 |
| 15 | Molecular dynamics simulation of graphene sinking during chemical vapor deposition growth on semi-molten Cu substrate显示文摘Copper foil is the most promising catalyst for the synthesis of large-area,high-quality monolayer graphene.Experimentally,it has been found that the Cu substrate is semi-molten at graphene growth temperatures.In this study,based on a self-developed C–Cu empirical potential and density functional theory(DFT)methods,we performed systematic molecular dynamics simulations to explore the stability of graphene nanostructures,i.e.,carbon nanoclusters and graphene nanoribbons,on semi-molten Cu substrates. | Ziwei Xu Guanghui Zhao Lu Qiu Xiuyun Zhang Guanjun Qiao Feng Ding | 2020 | npj Computational Materials2020，，1： | 2 |
| 16 | 石墨烯的化学气相沉积可控制备显示文摘自2004年以来,石墨烯以其优异的性能引起了人们对二维材料领域的持续关注与探索.众多优异的性质使,得石墨烯具有广泛的潜在应用、制备是应用的基础,其中化学气相沉积法以其可调控性和可扩展性成为石墨烯制备的主流方法之一.石墨烯的化学气相沉积可控制备是一个复杂系统,涉及对石墨烯各种性质的调控,深入认识制备过程的规律和控制生长对石墨烯以及其他二维材料领域的基础科学研究和应用至关重要.本综述从化学气相沉积可控制备石墨烯的领域发展角度对基底的选择、反应介质的调控、能带工程、洁净转移4个方面进行了相关阐述,最后对领域内存在的部分问题和未来可能的发展方向进行了讨论. | 姚文乾 孙健哲 陈建毅 武斌 刘云圻 | 2020 | 科学通报2020，65，28： | 2 |
| 17 | 晶圆级二维单晶材料生长的研究进展显示文摘低维材料因其原子级的物理尺寸而拥有独特的物理化学性质.以石墨烯为代表的二维材料具有优越的光学、电学、力学及热学性能,在电子、光电、能源、催化等领域具有巨大的应用潜力.大尺寸、高质量的单晶材料是大规模高端器件的应用基础.为此,研究者们致力于实现晶圆级二维单晶材料的制造研究.利用化学气相沉积法(CVD)制备二维材料具有薄膜质量高、可控性强、均匀性好等优点,因此,CVD成为制备高质量二维单晶材料的首选.文章从二维导电石墨烯、绝缘氮化硼和半导体过渡金属硫族化合物入手,总结了近年来利用CVD技术外延制造二维单晶薄膜的研究进展,讨论了大面积二维单晶材料的制备策略与生长机理,指出了目前存在的问题,对未来高质量二维单晶薄膜的制备方法进行了展望.该综述为进一步推动二维单晶材料的规模化应用提供借鉴. | 徐小志 张晓闻 王然 曾凡凯 周涛 | 2021 | 华南师范大学学报(自然科学版)2021，53，6： | 1 |
| 18 | Two meters graphene ?lm for generators显示文摘Physicists and especially applied physicists long for a convenient way for converting mechanical, solar energy, and thermal energy into electricity, which makes up our modern lives—from a small LED light to many integrated communication devices. Since the breakthrough work by Faraday in the beginning of the 19th century, the harvesting of electricity has been the hot topic in our modern society. | Zhibin Zhang Kaihui Liu | 2019 | Science Bulletin2019，64，8： | 1 |
| 19 | 界面调控二维六方氮化硼单晶外延生长取得新进展显示文摘近年来,随着芯片内元器件尺寸的不断减小,短沟道效应、热效应等日趋明显,开发全新的二维量子材料体系以实现变革性的器件应用已成为当前的研究热点.高端器件的规模化应用必须基于大面积、高品质的单晶材料,因此二维单晶材料的制备研究具有重要的科学意义和技术价值.2019年5月22日,Nature在线发表了题为“Epitaxial growth of a 100-square-centimetre single-crystal hexagonalboron nitride monolayer on copper”啲文章,报道了北京大学物理学院刘开辉研究组及其合作者[1],利用表面中心反演对称性破缺的单晶铜衬底实现了分米级单晶六方氮化硼的外延制备.该项研究成果受到学术界和工业界的广泛关注. | 吴克辉 | 2019 | 科学通报2019，64，21： | 1 |
| 20 | The complementary graphene growth and etching revealed by large-scale kinetic Monte Carlo simulation显示文摘To fully understand the kinetics of graphene growth,large-scale atomic simulations of graphene islands evolution up to macro sizes(i.e.,graphene islands of a few micrometers or with billions of carbon atoms)during growth and etching is essential,but remains a great challenge.In this paper,we developed a low computational cost large-scale kinetic Monte Carlo(KMC)algorithm,which includes all possible events of carbon attachments and detachments on various edge sites of graphene islands.Such a method allows us to simulate the evolution of graphene islands with sizes up to tens of micrometers during either growth or etching with a single CPU core.With this approach and the carefully fitted parameters,we have reproduced the experimentally observed evolution of graphene islands during both growth or etching on Pt(111)surface,and revealed more atomic details of graphene growth and etching.Based on the atomic simulations,we discovered a complementary relationship of graphene growth and etching—the route of graphene island shape evolution during growth is exactly the same as that of the etching of a hole in graphene and that of graphene island etching is exactly same as that of hole growth.The complementary relation brings us a basic principle to understand the growth and etching of graphene,and other 2D materials from atomic scale to macro size and the KMC algorithm is expected to be further developed into a standard simulation package for investigating the growth mechanism of 2D materials on various substrates. | Xiao Kong Jianing Zhuang Liyan Zhu Feng Ding | 2021 | npj Computational Materials2021，，1： | 1 |
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