Study on Manganin High Pressure Array Sensor

查看全文 作　　者：DUAN Jianhua DU Xiaosong YANG Bangchao ZHOU Hongren(School of Microelectronics and Solid-State Electronics,UESTC Chengdu 610054 China) 出　　处：《Journal of Electronic Science and Technology of China》索引2003年第1卷第1期,共3页 摘　　要：A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO₂ thin films by electron beamevaporation.Based on impedance match method of 'back configuration',the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO₂ package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa^-1.The upper limit and measure precision of sensor is improved. 关 键 词：manganin FILM sensor FUSED SILICA BACK CONFIGURATION