Memory materials and devices:From concept to application

查看全文 作　　者：Zhenhan [1]Zhang;Zongwei [2]Wang;Tuo [3]Shi;Chong [3]Bi;Feng [4]Rao;Yimao [2]Cai;Qi [3]Liu;Huaqiang [5]Wu;Peng [1]Zhou

机构地区：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,China;[2]Key Laboratory of Microelectronic Devices and Circuits(MOE),Institute of Microelectronics,Peking University,Beijing,China;[3]Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing,China;[4]College of Materials Science and Engineering,Shenzhen University,Shenzhen,China;[5]Institute of Microelectronics,Tsinghua University,Beijing,China

出　　处：《InfoMat》索引2020年第2卷第2期,共30页

基　　金：This work was supported by the National Natural Science Foundation of China(61622401,61851402,and 61734003);National Key Research and Development Program(2017YFB0405600);Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program(18SG01);P.Z.also acknowledges support from Shanghai Municipal Science and Technology Commission(grant no.18JC1410300). 摘　　要：Memory cells have always been an important element of information technology.With emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology.As is well known,better data storage is mostly achieved by miniaturization.However,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory units.To meet the increasing demands of information technology,novel and high-performance memory is urgently needed.Fortunately,emerging memory technologies are expected to improve memory performance and drive the information revolution.This review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review. 关键词：MEMORY MRAM PCRAM RRAM two-dimensional material

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Memory materials and devices:From concept to application

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