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| 1 | Memory materials and devices:From concept to application显示文摘Memory cells have always been an important element of information technology.With emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology.As is well known,better data storage is mostly achieved by miniaturization.However,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory units.To meet the increasing demands of information technology,novel and high-performance memory is urgently needed.Fortunately,emerging memory technologies are expected to improve memory performance and drive the information revolution.This review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review. | Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou | 2020 | InfoMat2020，2，2： | 15 |
| 2 | DRAM芯片的最新研制进展与发展趋势显示文摘介绍了动态随机存取存储器(DRAM)的最新制造技术、0.1μm特征尺寸理论极限的突破和相关新技术的进展,并展望了3种非易失性随机存取存储器(NVRAM),如FRAM、相变RAM、MRAM和BiCMOS技术的开发前景与发展趋势。 | 成立 王振宇 高平 | 2004 | 半导体技术2004，29，4： | 11 |
| 3 | Total ionizing dose and synergistic effects of magnetoresistive random-access memory显示文摘A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower. | Xing-Yao Zhang Qi Guo Yu-Dong Li Lin Wen | 2018 | Nuclear Science and Techniques2018，29，8： | 9 |
| 4 | 磁阻随机存取存储器(MRAM)的原理与研究进展显示文摘磁阻式随机存取存储器(MRAM)已被公认为一种前景非常广阔的存储器。本文综述了MRAM的概念和原理,以及它和目前常见的静态随机存储器(SRAM)、动态随机存储器(DRAM)、闪存(FLASH)等类型的存储器的差别。实用型MRAM主要利用隧道磁阻(TMR)效应,所以目前MRAM的研究重点之一就是如何提高传统的TMR材料的性能。MRAM的另外一个研究方向是发展新原理和新结构的MRAM。本文重点介绍了目前2种主要的MRAM,即toggle-MRAM和SST-MRAM的发展情况。 | 吴晓薇 郭子政 | 2009 | 信息记录材料2009，10，2： | 5 |
| 5 | Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices显示文摘The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories(MRAMs) with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor(CMOS) process respectively and different magnetic tunneling junctions(MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad(Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application. | 崔岩 杨玲 高腾 李博 罗家俊 | 2017 | Chinese Physics B2017，26，8： | 3 |
| 6 | 磁阻式随机存储器MRAM在片上高速缓存方面的应用显示文摘介绍MRAM在不同层次的高速缓存方面的应用,讨论了如何用MRAM构建高速缓存,并与传统的SRAM和DRAM进行了比较,介绍了提高MRAM性能和降低其功耗的新方法。 | 雷馨 | 2010 | 重庆科技学院学报(自然科学版)2010，12，5： | 3 |
| 7 | 磁阻式随机存储器(MRAM)重离子单粒子效应试验研究显示文摘磁阻式随机存储器(MRAM)作为非电荷存储的非易失存储器在抗辐射性能上有一定的优势,在空间有较好的应用前景。文章分析了MRAM的工作原理,选取典型的MR0A08BCYS35型MRAM存储器为研究对象,进行了重离子单粒子效应敏感性试验研究,在此基础上,利用专用软件Fore CAST计算预估了该种器件空间应用条件下的单粒子在轨翻转率,给出了在轨应用的具体建议。 | 戈勇 高一 梅博 于庆奎 孙毅 张洪伟 | 2018 | 航天器环境工程2018，35，6： | 2 |
| 8 | 嵌入式系统的高速度大容量非易失随机数据存储显示文摘介绍现代高速度大容量非易失随机数据存储的性能特点和典型器件;分析对比常见各种高速度大容量非易失随机数据存储器件的关键特性;阐述如何在嵌入式应用体系设计中选择合适的高速度大容量非易失随机数据存储器件。 | 怯肇乾 | 2008 | 单片机与嵌入式系统应用2008，8，7： | 2 |
| 9 | 最新MM存储能力提升到16Mb显示文摘磁性随机存储器(MRAM)和集成磁(Integrated Magnetic)产品供应商Everspin科技公司,近日推出了高容量16Mb MRAM产品。Everspin是在2008年从飞思卡尔半导体公司分离出来的一家独立公司,目前,Everspin是业内第一家推出商业化和量产MRAM的供应商。 | 丛秋波 | 2010 | 电子设计技术 EDN CHINA2010，，7： | 2 |
| 10 | 存储技术的现状与未来显示文摘存储器在最近这几年随着便携式产品的发展,有了许多不同的面貌与空间,在终端产品轻、薄、短、小的要求之下,半导体存储技术自然脱颖而出,本文将就未来存储器型态可能的样貌进行探讨. | 廖专崇 黄俊义 | 2004 | 电子产品世界2004，，2： | 2 |
| 11 | MTJ MRAM的特性分析与设计显示文摘对 MTJ(磁隧道结 )的 GMR(巨磁阻 )效应进行了分析。 MTJ的结构、形态和工作条件会对 GMR效应产生不同的影响。提出了一种 4× 1位 MTJMRAM(磁存储器 )的电路结构 ,每个 MRAM的存储单元由一个MTJ和一个 MOSFET构成 ,用 MTJ两磁极磁化方向的相对取向表示所存储的数据 ,数字线和位线电流产生磁场的共同作用可完成 MRAM数据的写入。 | 尚也淳 刘忠立 | 2003 | 固体电子学研究与进展2003，23，2： | 2 |
| 12 | 磁电阻随机存储器MRAM的原理与应用显示文摘MRAM是指以磁电阻性质来存储数据的随机存储器。MRAM是大多数手机、移动设备、膝上机、PC等数字产品的存储器的潜在替代产品。从MRAM芯片技术的特性上来看,可以预计它将能解决包括计算机或手机启动慢、数据丢失、数据装载缓慢、电池寿命短等问题,能明显改变消费者使用电子设备的方式。 | 徐迎晖 | 2006 | 电子技术(上海)2006，33，3： | 2 |
| 13 | 磁性多层膜中保护层Ru对磁性层NiFe的影响显示文摘主要研究了不同保护层Ta和Ru对磁性薄膜NiFe的厚度及磁性的影响。通过观察可以看出,NiFe/Ta,NiFe/Ru界面间产生了磁矩为零的部分层即所谓的'死层',其厚度分别为(1.5±0.2)nm,(1.2±0.2)nm(厚度误差在0.2nm范围内)。利用两种保护层时虽然避免不了'死层'现象的出现,但是发现,Ru作为保护层时产生的'死层'厚度比Ta作为保护层时的小。为了进一步证实这一点,我们采用X射线衍射仪及X射线光电子能谱仪对该两种薄膜进行了结构测试和深度剖析,并且运用XPSPeak 4.1拟合软件对获得的Ta4f和Ru3d的高分辨XPS谱进行了计算机拟合分析;结果表明,Ru较Ta更加适合于做保护层,渴望在自旋电子器件上得到应用。 | 吉吾尔.吉里力 拜山.沙德克 | 2008 | 功能材料2008，39，11： | 2 |
| 14 | MRAM——存储器技术的一颗新星显示文摘 | 区文 | 2001 | 电子计算机2001，，2： | 1 |
| 15 | 抗辐射MRAM的外部程序存储器设计显示文摘本文提出了一种基于MRAM的外部程序存储器设计方案,并以3D-PLUS公司的MRAM芯片3DMR2M16VS2427为例介绍了一种不需要进行文件格式的转换,采用通用扩展语言(GEL,General Extension Language)函数编制在线编程程序,通过DSP仿真器实现的外部存储器在线编程方法。 | 谢妮慧 王淳 何海燕 | 2017 | 单片机与嵌入式系统应用2017，17，4： | 1 |
| 16 | Artificial Neural Network and Full Factorial Design Assisted AT-MRAM on Fe Oxides, Organic Materials, and Fe/Mn Oxides in Surficial Sediments显示文摘Artificial neural network(ANN) and full factorial design assisted atrazine(AT) multiple regression adsorption model(AT-MRAM) were developed to analyze the adsorption capability of the main components in the surficial sediments(SSs). Artificial neural network was used to build a model(the determination coefficient square r2 is 0.9977) to describe the process of atrazine adsorption onto SSs, and then to predict responses of the full factorial design. Based on the results of the full factorial design, the interactions of the main components in SSs on AT adsorption were investigated through the analysis of variance(ANOVA), F-test and t-test. The adsorption capability of the main components in SSs for AT was calculated via a multiple regression adsorption model(MRAM). The results show that the greatest contribution to the adsorption of AT on a molar basis was attributed to Fe/Mn(-1.993 μmol/mol). Organic materials(OMs) and Fe oxides in SSs are the important adsorption sites for AT, and the adsorption capabilities are 1.944 and 0.418 μmol/mol, respectively. The interaction among the non-residual components(Fe, Mn oxides and OMs) in SSs interferes in the adsorption of AT that shouldn't be neglected, revealing the significant contribution of the interaction among non-residual components to controlling the behavior of AT in aquatic environments. | GAO Qian WANG Zhi-zeng WANG Qian LI Shan-shan LI Yu | 2011 | Chemical Research in Chinese Universities2011，27，6： | 1 |
| 17 | 飞思卡尔率先将MRAM技术投入商用显示文摘 | | 2006 | 半导体技术2006，31，9： | 1 |
| 18 | MRAM新一代计算机内存 | 戎霭伦 | 2004 | 记录媒体技术2004，0，2： | 1 |
| 19 | 存储技术的现状与未来显示文摘存储器在最近这几年随着便携式产品的发展,有了许多不同的面貌与空间,在终端产品轻、薄、短、小的要求之下,半导体存储技术自然脱颖而出,本文将就未来存储器型态可能的样貌进行探讨。 | 廖专崇 黄俊义 | 2004 | 电子产品世界2004，11，01A： | 1 |
| 20 | 面向纳电子时代的非易失性存储器显示文摘目前,业界对两大类全新的非易失性存储器进行了可行性调研,其中一类是基于无机材料的存储器技术,如铁电存储器(FeRAM)、磁阻存储器(MRAM)或相变存储器(PCM),另一类存储器技术则基于有机材料,铁电或导电开关聚合物。值得注意的是,在这些接替闪存的非易失性存储器当中,只有相变存储器具备进入广阔市场的能力表现,被视为下一个十年的主流存储器技术。 | Agostino Pirovano Roberto Bez | 2010 | 电子设计技术 EDN CHINA2010，，3： | 1 |
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