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| 1 | Memory materials and devices:From concept to application显示文摘Memory cells have always been an important element of information technology.With emerging technologies like big data and cloud computing,the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology.As is well known,better data storage is mostly achieved by miniaturization.However,as the size of the memory device is reduced,a series of problems,such as drain gate-induced leakage,greatly hinder the performance of memory units.To meet the increasing demands of information technology,novel and high-performance memory is urgently needed.Fortunately,emerging memory technologies are expected to improve memory performance and drive the information revolution.This review will focus on the progress of several emerging memory technologies,including two-dimensional material-based memories,resistance random access memory(RRAM),magnetic random access memory(MRAM),and phasechange random access memory(PCRAM).Advantages,mechanisms,and applications of these diverse memory technologies will be discussed in this review. | Zhenhan Zhang Zongwei Wang Tuo Shi Chong Bi Feng Rao Yimao Cai Qi Liu Huaqiang Wu Peng Zhou | 2020 | InfoMat2020，2，2： | 15 |
| 2 | 新型非易失存储研究显示文摘近年来,由于处理器性能和存储性能之间的差距不断扩大,存储系统成为计算机整体系统性能提升的瓶颈.随着微电子技术的迅速发展,新型非易失存储器件由于具有非易失、低能耗、良好的可扩展性和抗震等优良特性,得到了学术界和工业界的广泛关注.介绍了4种新型非易失存储器件,分别是STT-RAM,RRAM,PCRAM和FeRAM,对比了其与传统存储器件的性能参数.讨论了目前在存储架构中的不同层面(即缓存层、主存层和外存层)针对这些非易失存储器件的利用所开展的一些探索性工作,并分析了其中针对非易失存储器件的写次数有限、读写性能不均衡等不足所作出的一些策略设计.最后,对新型非易失存储器件的研究现状进行了总结,并提出了未来可能的发展方向. | 沈志荣 薛巍 舒继武 | 2014 | 计算机研究与发展2014，51，2： | 13 |
| 3 | A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology显示文摘In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns,respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications. | Zhitang Song Yi Peng Zhan Daolin Cai Bo Liu Yifeng Chen Jiadong Ren | 2015 | Nano-Micro Letters2015，7，2： | 2 |
| 4 | Reliable Ge_(2)Sb_(2)Te_(5) based phase-change electronic synapses using carbon doping and programmed pulses显示文摘Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory(PCRAM)have attracted an extensive investigation.However,due to the intrinsic asymmetric reversible phase transition,the defective weight update of PCRAM synapses in aspects of tuning range,linearity and continuity has long required a system-level complexity of circuits and al-gorithms.The cell-level improvements to a great extent may slim the system thus achieving efficient computing.We report in this work the great enhancement of Ge_(2)Sb_(2)Te_(5)(GST)based PCRAM synapses by combining materials engineering and pulse programming.It is found that carbon doping in GST retards the rate of phase changing thus increasing the controllability of the conductance,while non-linear programmable pulse excitations can eventually lead to a reliable synaptic potentiation and depression.A set of improved programmable pulse schemes for spike-timing dependent plasticity was then demonstrated,suggesting its potential superiority in flexible programming and reliable data collection.Our methods and results are of great significance for implementing PCRAM electronic synapses and high-performance neuro-inspired computing. | Qiang Wang Gang Niu Ruobing Wang Ren Luo Zuo-Guang Ye Jinshun Bi Xi Li Zhitang Song Wei Ren Sannian Song | 2022 | Journal of Materiomics2022，8，2： | 1 |
| 5 | 前沿显示文摘我国首款自主知识产权相变存储器芯片研制成功中国科学院上海微系统与信息技术研究所近日成功研发我国首款具有自主知识产权的相变存储器(PCRAM)芯片,打破了我国存储器芯片技术长期被国外垄断的局面。 | | 2011 | 河南科技2011，30，5： | 0 |
| 6 | 应用材料公司用“新剧本”推动后摩尔时代新型存储器实现量产显示文摘在半导体工艺制程方面,目前主要依赖光刻技术去推动晶体管尺寸的减小。其实,还可以通过新架构、新型结构/3D、新材料和其他一些新微缩方式实现晶体管尺寸的下降和性能提升。然后就是依靠先进的封装技术,从系统层面上实现芯片性能的最优化。所有这一切,材料工程是基础。在推动半导体产业兴起过程中,应用材料公司及时推出了自己的'全新剧本'。 | 单祥茹 | 2019 | 中国电子商情2019，，8： | 0 |
| 7 | 利用压印技术制备大面积相变材料阵列显示文摘采用高效、低成本的紫外压印技术(UV—IL)在2in.Si/SiO2基Ti/TiN/Si2Sb2Te5(SST)多层膜表面制备了密度为3.8M/In^2的AMONIL点阵结构,并通过反应离子刻蚀得到相变材料SST阵列;电阻与脉冲宽度特性测得SST基PCRAM存储单元SET/RESET电阻值变化约30倍,Ⅰ—Ⅴ特性表明,阈值电压为1.18V。此外,时间分辨XRD原位加热情况下SST薄膜结构变化说明,SST材料的相变发生在200℃~300℃之间。 | 刘彦伯 钮晓鸣 宋志棠 闵国全 万永中 张静 周伟民 李小丽 张挺 张剑平 | 2008 | 微细加工技术2008，，5： | 0 |
| 8 | 相变存储器,预示下一代存储器的到来显示文摘存储器是一个新兴产业,也是集成电路最重要的技术之一。宋志棠团队研发的相变存储器及存储材料,综合性能指标已达到国际先进水平,被称为预示着下一代存储器的到来。国家'十三五'发展规划指出,集成电路产业是信息技术产业的核心,是支撑经济社会发展和保障国家安全的战略性、基础性和先导性产业,启动集成电路重大生产力布局规划工程,将实施一批带动作用强的项目,推动产业能力实现快速跃升。作为一个新兴产业,存储器是集成电路最重要的技术之一,也是国家核心竞争力的重要体现。 | 费晓蕾 | 2019 | 华东科技2019，0，3： | 0 |
| 9 | 45nm PCRAM对GST CMP的挑战和解决方法显示文摘本文报导GST(Ge2Sb2Te5)CMP工艺的挑战和解决方法。通过适当的抛光垫选择、工艺方案和清洗步骤优化解决GST的污染问题。实现最小氧化物损失的关键因素是抛光液的稀释比例和H2O2浓度的优化和控制过抛光。微微秒激光acoustics型测量工具证明适用于GST CMP工艺的在线和离线监控。 | Li Jiang Feng Chen PuLei Zhu Mingqi Li Hongtao Liu Guanping Wu Ming Zhong AoDong He | 2013 | 功能材料与器件学报2013，19，4： | 0 |
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