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    题名 作者 年代 出处 被引量
1Study on the Performance of PECVD Silicon Nitride Thin Films显示文摘Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pressure and working temperature. The etching process of Si3N4 is studied by inductively coupled plasma (ICP) with a gas mixture of SF6 and O2. The influence of the technique parameters, such as ICP power, DC bias, gas composition, total flow rate, on the etching selectivity of Si3N4/EPG533 which is used as a mask layer and the etching rate of Si3N4 is studied, in order to get a better etching selectivity of Si3N4/EPG533 with a faster etching rate of Si3N4. The optimized process parameters of etching Si3N4 by ICP are obtained after a series of experiments and analysis. Under the conditions of total ICP power of 250 W, DC bias of 50W, total flow rate of 40 sccm and O2 composition of 30%, the etching selectivity of 2.05 can be reached when Si3N4 etching rate is 336 nm/min.LIU Liang LIU Weiguo CAO Na CAI Changlong 2013Defence Technology(防务技术)2013,9,2:3
2Characterization and biodegradation kinetics of a new cold-adapted carbamazepine-degrading bacterium, Pseudomonas sp. CBZ-4显示文摘Carbamazepine is frequently detected in waters and hardly eliminated during conventional wastewater treatment processes due to its complicated chemical structure and resistance to biodegradation. A carbamazepine-degrading bacterium named CBZ-4 was isolated at a low temperature(10°C) from activated sludge in a municipal wastewater treatment plant. Strain CBZ-4, which can use carbamazepine as its sole source of carbon and energy, was identified as Pseudomonas sp. by the 16S rRNA gene sequence. The composition and percentage of fatty acids, which can reveal the cold-adaptation mechanism of strain CBZ-4, were determined. Strain CBZ-4 can efectively degrade carbamazepine at optimal conditions: pH 7.0, 10°C, 150 r/min rotation speed, and 13% inoculation volume. The average removal rate of carbamazepine was 46.6% after 144 hr of incubation. The biodegradation kinetics of carbamazepine by CBZ-4 was fitted via the Monod model. Vmax and Ks were found to be 0.0094 hr 1and 32.5 mg/L, respectively.Ang Li Rui Cai Di Cui Tian Qiu Changlong Pang Jixian Yang Fang Ma Nanqi Ren 2013Journal of Environmental Sciences2013,25,11:2
3Caspase‐3 Modulates Regenerative Response After Stroke显示文摘Wenying Fan Yiqin Dai Haochen Xu Ximin Zhu Ping Cai Lixiang Wang Chungang Sun Changlong Hu Ping Zheng Bing‐Qiao Zhao 2014Stem Cells2014,,2:1
4Improvement of nitrification efficiency by bioaugmentation in sequencing batch reactors at low temperature显示文摘Bioaugmentation 是在在低温度定序批反应堆(SBR ) 与高氨集中对待市政的废水的一个有效方法(10 ?????????????? 楢慯杵敭瑮瑡潩吗??Di CUI Ang LI Tian QIU Rui CAI Changlong PANG Jihua WANG Jixian YANG Fang MA Nanqi REN 2014Frontiers of Environmental Science & Engineering2014,8,6:1
5High-frequency enhanced response based on Sb_(2)Te_(3)topological insulators显示文摘Topological insulators represent a new quantum phase of matter with spin-polarized surface states that are protected from backscattering, exhibiting electronic responses to light, such as topological quantum phase transitions. However, the effects of high-frequency driving topological intrinsic systems have remained largely unexplored challenges experimentally for high-sensitivity terahertz detection. In this study, by integrating Sb2Te3 topological insulators with subwavelength metal antennas through micro-nano processing, a high-frequency terahertz detector with high sensitivity is proposed. The enhanced response originates from the asymmetric scattering of the surface electrons in the Sb_(2)Te_(3) flakes induced by the terahertz wave. The device displays room-temperature photodetection with a responsivity of 192 mA/W and equivalent noise power of less than 0.35 nW/Hz^(1/2) in the frequency range from 0.02 to 0.3 THz. These results pave the way for the exploitation of topological insulators for high-frequency operation in real-time imaging within long-wavelength optoelectronics.SHI ZHANG CHAOFAN SHI WEIWEI TANG LIBO ZHANG LI HAN CHENGSEN YANG ZHENGYANG ZHANG JIAN WANG MIAO CAI GUANHAI LI CHANGLONG LIU LIN WANG XIAOSHUANG CHEN WEI LU 2022Photonics Research2022,10,10:1
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