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2篇 您的检索式:作者名="GAO Xujing"
    题名 作者 年代 出处 被引量
1Swelling and thermal properties of porous PNIPAM/PEG hydrogels prepared by radiation polymerization显示文摘In this study,a series of porous intelligent hydrogels were synthesized by radiation exhibiting the lower critical solution temperature(LCST) and fast response involving a combination of A’-isopropyl acrylamideas monomer, polyethylene glycol(PEG) as pore-forming agent and N,N-methylene-bis-acrylamide as crosslinking agent.The hydrogels were analyzed by Fourier transform infrared spectroscopy,and the influence of radiation doses on their swelling and thermal behaviors were studied.Their surface morphologies were examined by scanning electron microscopy.The results showed that PEG molecules only acted as pore-forming agent in the cross-linked polymerization.Their swelling ratios reduced with increasing radiation doses.The LCST was around 37℃,and varied little with the radiation doses.The frozen water content of PNIPAM/PEG6000 hydrogel reduced with increasing the radiation dose,and was greater than that of PN1PAM hydrogel at 15 kGy.Hydrogel macropores were prepared by PEG agent,and the hydrogels without PEG had a dense surface.The porous hydrogels are expected to be applied in the field of artificial intelligence material.LI Zhihui LIU Wentao LI Zhongyuan YANG Mingcheng GAO Xujing CUI Haitao HE Suqin ZHU Chengshen 2013Nuclear Science and Techniques2013,24,2:3
2Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary显示文摘Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix.Hence, their presence can have significant impacts on the properties of devices.Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization.Here, we fabricate a 36.8°Sr RuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance.We identify its atomic arrangement, including oxygen,using scanning transmission electron microscopy and spectroscopy.Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary.The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.Xujing Li Li Yin Zhengxun Lai Mei Wu Yu Sheng Lei Zhang Yuanwei Sun Shulin Chen Xiaomei Li Jingmin Zhang Yuehui Li Kaihui Liu Kaiyou Wang Dapeng Yu Xuedong Bai Wenbo Mi Peng Gao 2020National Science Review2020,7,4:0
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