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| 1 | High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces显示文摘The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum(BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing. | Cizhe Fang Qiyu Yang Qingchen Yuan Xuetao Gan Jianlin Zhao Yao Shao Yan Liu Genquan Han Yue Hao | 2021 | Opto-Electronic Advances2021，4，6： | 8 |
| 2 | A review:Photonics devices,architectures,and algorithms for optical neural computing显示文摘The explosive growth of data and information has motivated various emerging non-von Neumann computational approaches in the More-than-Moore era.Photonics neuromorphic computing has attracted lots of attention due to the fascinating advantages such as high speed,wide bandwidth,and massive parallelism.Here,we offer a review on the optical neural computing in our research groups at the device and system levels.The photonics neuron and photonics synapse plasticity are presented.In addition,we introduce several optical neural computing architectures and algorithms including photonic spiking neural network,photonic convolutional neural network,photonic matrix computation,photonic reservoir computing,and photonic reinforcement learning.Finally,we summarize the major challenges faced by photonic neuromorphic computing,and propose promising solutions and perspectives. | Shuiying Xiang Yanan Han Ziwei Song Xingxing Guo Yahui Zhang Zhenxing Ren Suhong Wang Yuanting Ma Weiwen Zou Bowen Ma Shaofu Xu Jianji Dong Hailong Zhou Quansheng Ren Tao Deng Yan Liu Genquan Han Yue Hao | 2021 | Journal of Semiconductors2021，42，2： | 7 |
| 3 | Recent progress of integrated circuits and optoelectronic chips显示文摘Integrated circuits(ICs)and optoelectronic chips are the foundation stones of the modern information society.The IC industry has been driven by the so-called'Moore's law'in the past 60 years,and now has entered the post Moore's law era.In this paper,we review the recent progress of ICs and optoelectronic chips.The research status,technical challenges and development trend of devices,chips and integrated technologies of typical IC and optoelectronic chips are focused on.The main contents include the development law of IC and optoelectronic chip technology,the IC design and processing technology,emerging memory and chip architecture,brain-like chip structure and its mechanism,heterogeneous integration,quantum chip technology,silicon photonics chip technology,integrated microwave photonic chip,and optoelectronic hybrid integrated chip. | Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI | 2021 | Science China(Information Sciences)2021，64，10： | 7 |
| 4 | Research and Commercial Application of CPP Technology for Producing Light Olefins from Heavy Oil显示文摘Catalytic pyrolysis process(CPP)producing ethylene and propylene from paraffin base atmospheric residue was developed by RIPP and its first in the world unit was put into commercial operation successfully.The results of performance test showed that the yield of ethylene and propylene reached 14.84% and 22.21% ,respectively,at a reaction temperature of610℃by using Daqing atmospheric residue as the feedstock under an operation mode of producing ethylene and propylene at the same time,and the aromatic content of cracked naphtha reached 82.46% .The successful operation of this unit has opened a novel route for producing light olefins and aromatics from heavy oil,which is also a good example symbolizing the integration of refining technology with petrochemical process. | Zhu Genquan Xie Chaogang | 2013 | China Petroleum Processing & Petrochemical Technology2013，15，3： | 5 |
| 5 | Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection显示文摘We propose and numerically realize an optical spike-timing dependent plasticity(STDP)scheme by using a single vertical-cavity surface-emitting laser(VCSEL).In the scheme,the VCSEL is subjected to an orthogonally-polarized continuous-wave optical injection(OPCWOI)and dual-polarized pulsed optical injections(DPPOI).Based on the widely used spin-flip model,the response spiking dynamics of VCSEL is numerically studied,and then the optical STDP in a single VCSEL is explored.The roles of bias current,the strength of OPCWOI and DPPOI,and the frequency detuning on the optical STDP curve are numerically analyzed.It is found that,by simultaneously utilizing the response spiking dynamics in two orthogonal polarization modes,an optical STDP could be achieved by using a single VCSEL.Furthermore,the weight update of STDP curve can be calculated in real-time.Additionally,the STDP curves can also be controlled by adjusting some controllable parameters.The real-time optical STDP based on a single VCSEL is numerically realized for the first time,which paves the way towards fully VCSELs-based photonic neuromorphic systems with low power consumption. | Shuiying XIANG Yanan HAN Xingxing GUO Aijun WEN Genquan HAN Yue HAO | 2020 | Science China(Information Sciences)2020，63，6： | 3 |
| 6 | Roles of Emerging FCC-based Technologies in Shifting to Petrochemicals Production显示文摘The emerging FCC-based technologies are applied in an attempt to shift to the production of designated light olefins(including mainly ethylene and propylene) as well as light aromatics(including benzene, toluene, and xylene)developed by the Research Institute of Petroleum Processing(RIPP), SINOPEC. The RIPP's proprietary technologies covering the Deep Catalytic Cracking(DCC), the Enhanced Deep Catalytic Cracking(DCC-PLUS), and the Maximizing Catalytic Propylene(MCP) have been playing decisive roles in the processing of crude aimed at closer integration of petroleum refining and petrochemical production both inside and outside of China since 1990. Three cases of commercial applications in five refineries, including Case Ⅰ— the closer integration between the steam cracker and the DCC/DCC-PLUS unit, Case Ⅱ— the petrochemical refinery provided with a DCC-PLUS unit, and Case Ⅲ— the integrated petrochemical/fuels refinery provided with a MCP unit, have highlighted their far-reaching effects on global petrochemicals production. | Xie Chaogang Gao Yongcan Zhu Genquan Zhang Jiushun | 2017 | China Petroleum Processing & Petrochemical Technology2017，19，4： | 2 |
| 7 | A structural filter approach to human detection显示文摘 | Duan Genquan Ai Haizhou Lao Shihong | 2010 | Lecture Notes in Computer Science2010，6316，： | 1 |
| 8 | Design technology co-optimization towards sub-3 nm technology nodes显示文摘Over the past half century,Moore’s Law has played a crucial role in the development of the semiconductor field,which depends on straightforwardly dimensional scaling with approximately a two-year cadence.Significant benefits of performance,power,area,and cost(PPAC)in microchips are expected at each technology node.However,aggressive pitchbased scaling by resolution enhancement techniques becomes increasingly challenging to sustain. | Genquan Han Yue Hao | 2021 | Journal of Semiconductors2021，42，2： | 1 |
| 9 | Mobility enhancement techniques for Ge and GeSn MOSFETs显示文摘The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly difficult.The application of high mobility channel materials is one of the most promising solutions to overcome the bottleneck.The Ge and GeSn channels attract a lot of interest as the alternative channel materials,not only because of the high carrier mobility but also the superior compatibility with typical Si CMOS technology.In this paper,the recent progress of high mobility Ge and GeSn MOSFETs has been investigated,providing feasible approaches to improve the performance of Ge and GeSn devices for future CMOS technologies. | Ran Cheng Zhuo Chen Sicong Yuan Mitsuru Takenaka Shinichi Takagi Genquan Han Rui Zhang | 2021 | Journal of Semiconductors2021，42，2： | 1 |
| 10 | 显示文摘 | Yin Changlong Zhu Genquan Xia Daohong | 2002 | Fuel Processing Technology2002，79，： | 1 |
| 11 | An Environmen- tally Benign Route to γ-Butyrolactone Through the Coupling of Hydrogenation and Dehydrogenation 显示文摘 | Zhu Yulei Yang Jun Dong Genquan | 2005 | Appl Catal B2005，57，3： | 1 |
| 12 | β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process显示文摘β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si(GaOISi)substrate fabricated by ion-cutting process.Enhancement(E)-and depletion(D)-modeβ-Ga2O3 transistors are realized on by varying the channel thickness(Tch).E-mode GaOISi transistor with a Tchof 15 nm achieves a high threshold voltage VTHof^8 V.With the same T increase,GaOISi transistors demonstrate more stable ON-current IONand OFF-current IOFFperformance compared to the reported devices on bulk Ga2O3 wafer.Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C,respectively. | YiBo Wang WenHui Xu TianGui You FengWen Mu HaoDong Hu Yan Liu Hao Huang Tadatomo Suga GenQuan Han Xin Ou Yue Hao | 2020 | Science China(Physics,Mechanics & Astronomy)2020，63，7： | 1 |
| 13 | Coal to liquid (CTL):Commercialization prospects in china显示文摘 | Hao Xu Dong Genquan Yang Yong Xu Yuanynan Li Yongwang | | 0，，09： | 1 |
| 14 | An environmentally benign route to γ-butyrolactone through the coupling of hydrogenation and dehydrogenation显示文摘 | ZHU Yulie YANG Jun DONG Genquan | 2005 | Applied Catalysis B:Environmental2005，57，3： | 1 |
| 15 | Catalyst for Increasing Ethylene and Propylene Production and Its Industrial Application in a Catalytic Pyrolysis Unit显示文摘Light olefins,particularly ethylene and propylene,are the most important building blocks for the petrochemical industry,and demand for their production has been increasing.The catalytic pyrolysis process(CPP)and the corresponding catalyst,developed by SINOPEC Research Institute of Petroleum Processing Co.,Ltd.,are designed to maximize the light olefin yield from catalytic cracking of heavy feedstocks.However,owing to the continuing degradation of feedstocks,the original catalyst can no longer maintain its activity.Herein,we describe the rational design of the new catalyst,Epylene,from a new metal-modified hierarchical ZSM-5 zeolite and matrix.Epylene was tested in the CPP unit of Shaanxi Yanchang Coal Yulin Energy and Chemical Company.A test run and base run were conducted to demonstrate the better performance of Epylene compared with the original catalyst.The properties of the feedstocks and the operating conditions in both runs were similar.The light olefin yield was increased from 33.95%to 36.50%and the coke yield was only 9.58%in the test run,which was lower than that in the base run. | Sha Yuchen Wang Peng Ouyang Ying Zhu Genquan Lu Lijun Song Haitao Lin Wei Luo Yibin | 2023 | China Petroleum Processing & Petrochemical Technology2023，25，2： | 1 |
| 16 | Industrial Application and Fundamental Research Progress on Fluid Catalytic Cracking Technology of Downer Reactors显示文摘Fluid catalytic cracking(FCC)technologies of downer reactors,which have reached the demonstration or commercial scale,are systematically discussed,i.e.,millisecond catalytic cracking,fluidization lab of Tsinghua University,and high-severity FCC.Moreover,aiming to promote industrial application,the fundamental studies are comprehensively described,particularly focusing on high-density downer reactors,clusters,and up-scaling.Furthermore,from the perspective of industrial application,some research directions toward further developments are suggested. | Liu Wenming Yuan Qimin Zhu Genquan Yang Chao | 2022 | China Petroleum Processing & Petrochemical Technology2022，24，3： | 0 |
| 17 | Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra显示文摘 | Cizhe Fang Yan Liu Qingfang Zhang Genquan Han Xi Gao Yao Shao Jincheng Zhang Yue Hao | 2018 | Opto-Electronic Advances2018，1，3： | 0 |
| 18 | Heterogeneous integration technology for the thermal management of Ga_(2)O_(3) power devices显示文摘The more severe phonon-phonon scattering in gallium oxide(Ga_(2)O_(3)) crystals leads to lower thermal conductivity compared to most other semiconductor materials. To address this issue and enhance the heat dissipation in Ga_(2)O_(3) devices, one practical solution is to integrate Ga_(2)O_(3) with a highly thermally conductive substrate, such as SiC and Si. Currently,there are three methods employed for the heterogeneous integration of Ga_(2)O_(3) with highly thermally conductive substrates:mechanical exfoliation, hetero-epitaxy growth, and ion-cutting technique. | Genquan Han Tiangui You Yibo Wang Zheng-Dong Luo Xin Ou Yue Hao | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 19 | Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics: Epitaxial Growth and Power Devices(Ⅰ)显示文摘There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications. | Genquan Han Shibing Long Yuhao Zhang Yibo Wang Zhongming Wei | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 20 | Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline��β-Ga_(2)O_(3)thin film on SiC显示文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of��β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of��β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline��β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred��β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated��β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the��β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a��β-Ga_(2)O_(3)/SiC heterostructured material and a��β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on��β-Ga_(2)O_(3)/SiC to be one quarter that on the��β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the��-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in��β-Ga_(2)O_(3)-based devices. | Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang | 2021 | Fundamental Research2021，1，6： | 0 |
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