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43篇 您的检索式:作者名="Goel Sanjay"
    题名 作者 年代 出处 被引量
1Evolution of pancreatoduodenectomy in a tertiary cancer center in India: Improved results from service reconfiguration显示文摘Shailesh V. Shrikhande Savio George Barreto B.A. Somashekar Kunal Suradkar Guruprasad S. Shetty Sanjay Talole Bhawna Sirohi Mahesh Goel Parul J. Shukla 2013Pancreatology2013,,1:2
2CEO Overconfidence and Dividend Policy 显示文摘Sanjay Deshmukh Anand M Goel Keith M Howe 2013Journal of Financial Intermediation2013,22,3:1
3Service-based P2P overlay network for collaborative problem solving显示文摘SANJAY GOEL SHASHISHEKARA S TALYA 2007Decision Support Systems2007,,43:1
4Modifications in the phenolphthalein method for spectrophotometric estimation of betacyclodextrin 显示文摘Anuj Goel Sanjay N Nene 1995Starch1995,47,10:1
5Performance measurement for accountability in corporate governance: A data envelopment analysis approach显示文摘Ehsan H. Feroz Sanjay Goel Raymond L. Raab 2008Review of Accounting and Finance2008,,2:1
6Service-based P2P overlay network for collaborative problem solving显示文摘Goel Sanjay Talya Shashishekara S Sobolewski Michael 0,,2:1
7K-Ras, Intestinal Homeostasis and Colon Cancer显示文摘Sanjay Goel Jie Huang Lidija Klampfer 2015Current Clinical Pharmacology2015,,1:1
8A phase I study of eribulin mesylate ( E7389 ) , a mechanistically novel inhibitor of microtubule dynamics, in patients with advanced solid malig- nancies 显示文摘Sanjay Goel Alain C Mita Monica Mita 2009Clin Cancer Res2009,15,12:1
9Resilience metrics for service-oriented networks: A service allocation approach 显示文摘Rosenkrantz Daniel J Goel Sanjay Ravi S S 2009IEEE Trans on Reliability2009,2,3:1
10Can business process reengineering lead to security vulnerabilities:analyzing the reengineered process显示文摘Sanjay Goel Vicki Chen 2008Int J Product Econom2008,115,1:1
11Spontaneous Transmural Migration of Surgical Sponges显示文摘Rajesh Godara Sanjay Marwah R.K. Karwasra Rohit Goel 2006Asian Journal of Surgery2006,,1:1
12Integrating the global enterprise using Six Sigma: Business process reengineering at General Electric Wind Energy显示文摘Sanjay Goel Vicki Chen 2008International Journal of Production Economics2008,113,2:1
13The perils of pollyanna: Development of the over - Trust Con- struct显示文摘Sanjay Goel Geoffrey Bell G Jon Pierce L 2005Journal of Business Ethics2005,58,13:1
14CEO overconfidence and dividend policy 显示文摘Deshmukh Sanjay Goel Howe 2013Joumal of financial intermediation2013,,22:1
15Fixed versus variable reference points in the risk-return relationship显示文摘Richard Z Gooding Sanjay Goel Robert M Wiseman 1996Journal of Economic Behavior and Organization1996,,2:1
16Cyberwarfare , connecting the dots in cyber intelligence显示文摘Goel Sanjay 2011Communications of the ACM2011,54,8:1
17PTEN Gene Expression and Mutations in the PIK3CA Gene as Predictors of Clinical Benefit to Anti-Epidermal Growth Factor Receptor Antibody Therapy in Patients With KRAS Wild-Type Metastatic Colorectal Cancer显示文摘Arjun Sood Danielle McClain Radhashree Maitra Atrayee Basu-Mallick Raviraja Seetharam Andreas Kaubisch Lakshmi Rajdev John M. Mariadason Kathryn Tanaka Sanjay Goel 2012Clinical Colorectal Cancer2012,,2:1
18Case of the season显示文摘Sanjay Sharma Naval Kishore Vikram Sanjay Thulkar Saroj Goel 2001Seminars in Roentgenology2001,,1:1
19Service-based P2P overlay network for collaborative problem solving显示文摘Goel Sanjay Talya Shashishekara S Sobolewski Michael 2007Decision Support Systems2007,43,2:1
20Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator MOSFETs显示文摘This paper presents the analytical modeling of subthreshold current and subthreshold swing of shortchannel fully-depleted(FD) strained-Si-on-insulator(SSOI) MOSFETs having vertical Gaussian-like doping profile in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approximation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length(L/, gate-oxide thickness(tox), strained-Si channel thickness.ts-Si/, peak doping concentration.NP/, project range.Rp/ and straggle(σp/)of the Gaussian profile have been considered while predicting the device characteristics.The present work may help to overcome the degradation in subthreshold characteristics with strain engineering.These subthreshold current and swing models provide valuable information for strained-Si MOSFET design. Accuracy of the proposed models is verified using the commercially available ATLASTM, a two-dimensional(2D)device simulator from SILVACO.Gopal Rawat Sanjay Kumar Ekta Goel Mirgender Kumar Sarvesh Dubey S.Jit 2014Journal of Semiconductors2014,35,8:1
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