维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

11篇 您的检索式：作者名="Jayaprasad"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Adaptive Activity and Environment Recognition for Mobile Phones 显示文摘	JUSSI P JAYAPRASAD B JUSSI C	2014	Sensors2014，，20：	1
	2	Synthesis of 4-aryl benzimidazolo-5-triazin-2-ones and 2-aroylaminobenzimidazolo-1, 2, 4-thiadiazolines显示文摘	SRIDEVI G JAYAPRASAD RAO P KONDAL REDDY K	1989	Synthetic Communications1989，19，56：	1
	3	Congenital complete heart block and maternal connective tissue disease显示文摘	Jayaprasad N Johnson F Venugopal K	2006	Int J Cardiol2006，112，2：	1
	4	Congenital complete heart block and maternal connective tissue disease 显示文摘	Jayaprasad N Johnson F Venugopal K	2006	lnt J Cardiol2006，112，2：	1
	5	Atrial fibrillation and hyperthyroidism显示文摘	Jayaprasad N Francis J	2005	Indian Pacing Electrophysiol J2005，5，：	1
	6	Congenital complete heart block and maternal connective tissue disease 显示文摘	Jayaprasad N Johnson F Venugopal K	2006	Int J Cardiol2006，112，2：	1
	7	The Promise of Human Induced Pluripotent Stem Cells in Dental Research显示文摘	Thekkeparambil Chandrabose Srijaya Padmaja Jayaprasad Pradeep Rosnah Binti Zain Sabri Musa Noor Hayaty Abu Kasim Vijayendran Govindasamy Rajarshi Pal	2012	Stem Cells International2012，，：	1
	8	Severe hypoglycemia due to poorly differentiated hepato-cellular carcinoma显示文摘	Jayaprasad N Anees T Bijin T	2006	JAPI2006，54，：	1
	9	Safety and efficacy of low molecular weight dextran ( dextran 40) in head and neck free flap reconstruction 显示文摘	Jayaprasad K Mathew J Thankappan K	2013	J Reconstr Microsurg2013，29，7：	1
	10	Severe hypoglycemia due to poorly differentiaed hepatocellular carcinoma显示文摘	Jayaprasad N Anees T Bijin T	2006	J Assoc Physicians India2006，54，：	1
	11	Si-SiO_2 interface passivation by plasma NH_3 and atomic H显示文摘Plasma ammonia treatment at 400 ℃ leads to de-passivation of a fully hydrogenated Si-SiO2 interface, and to passivation of a fully de-hydrogenated Si-SiO2 interface. Plasma NH3 exposure causes irreversible Si surface damage and degradation of thermal stability. Atomic hydrogen exposure, although it results in similar effects on the Si-SiO2 interface, does not introduce additional defects or a decrease of the Si surface thermal stability. The difference between plasma NH3 exposure and atomic H exposure is speculated to be due to either the nitridation of Si-SiO2 interface or radiation damage resulting from plasma NH3 exposure. EPR measurements indicate changes of the paramagnetic defect properties and an increase in the paramagnetic defect density generated by plasma NH3 exposure.	WEBER K.J. JAYAPRASAD A. SMITH P.J. BLAKERS A.	2006	Rare Metals2006，25，z1：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费