|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Reversing abnormal hole localization in high-Alcontent AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling显示文摘AlGaN has attracted considerable interest for ultraviolet(UV)applications.With the development of UV optoelectronic devices,abnormal carrier confinement behaviour has been observed for c-plane-oriented AlGaN quantum wells(QWs)with high Al content.Because of the dispersive crystal field split-off hole band(CH band)composed of pz orbitals,the abnormal confinement becomes the limiting factor for efficient UV light emission.This observation differs from the widely accepted concept that confinement of carriers at the lowest quantum level is more pronounced than that at higher quantum levels,which has been an established conclusion for conventional continuous potential wells.In particular,orientational pz orbitals are sensitive to the confinement direction in line with the conducting direction,which affects the orbital intercoupling.In this work,models of Al_(0.75)Ga_(0.25)N/AlN QWs constructed with variable lattice orientations were used to investigate the orbital intercoupling among atoms between the well and barrier regions.Orbital engineering of QWs was implemented by changing the orbital state confinement,with the well plane inclined from 0°to 90°at a step of 30°(referred to the c plane).The barrier potential and transition rate at the band edge were enhanced through this orbital engineering.The concept of orbital engineering was also demonstrated through the construction of inclined QW planes on semi-and nonpolar planes implemented in microrods with pyramid-shaped tops.The higher emission intensity from the QWs on the nonpolar plane compared with those on the polar plane was confirmed via localized cathodoluminescence(CL)maps. | Li Chen Wei Lin Huiqiong Wang Jinchai Li Junyong Kang | 2020 | Light(Science & Applications)2020，9，1： | 6 |
| 2 | Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes显示文摘As demonstrated during the COVID-19 pandemic,advanced deep ultraviolet(DUV)light sources(200–280 nm),such as AlGaN-based light-emitting diodes(LEDs)show excellence in preventing virus transmission,which further reveals their wide applications from biological,environmental,industrial to medical.However,the relatively low external quantum efficiencies(mostly lower than 10%)strongly restrict their wider or even potential applications,which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures.Here,we review recent progress in the development of novel concepts and techniques in AlGaNbased LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures.In addition,we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments. | Jinchai Li Na Gao Duanjun Cai Wei Lin Kai Huang Shuping Li Junyong Kang | 2021 | Light(Science & Applications)2021，10，7： | 4 |
| 3 | Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes显示文摘AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet(UV)light-emitting diodes(LEDs)owing to their direct,wide,and adjustable energy bandgap.AlGaN-based devices have extensive appli-cability owing to their stable physico-chemical properties.With decades of research effort,significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline qual-ity,doping efficiency,and device design.In this review,methods to obtain high-quality AlGaN-based materials,achieve high doping efficiency,and design UV-LED structures are summarized and discussed.Finally,the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted. | Yuxuan Chen Jianwei Ben Fujun Xu Jinchai Li Yang Chen Xiaojuan Sun Dabing Li | 2021 | Fundamental Research2021，1，6： | 3 |
| 4 | Self-Assembly of Aligned ZnO Nanoscrews:Growth,Configuration,and Field Emission显示文摘 | Liao Lei Li Jinchai Liu Dehua | 2005 | Appl Phys Lett2005，86，08： | 1 |
| 5 | Synthesis and Optical Properties of ZnO Nanostructures显示文摘 | Wang Duofa Liao Lei Li Jinchai | 2005 | Chin Phys Lett2005，22，8： | 1 |
| 6 | Photodegradation of dye pollutants on TiO2 nanoparticles dispersed in silicate under UV-vis irradiation显示文摘 | Li Jingyi Chen Chuncheng Zhao Jinchai | 2002 | Appl Catal B2002，37，： | 1 |
| 7 | Ferroelectric memory based on nanostructures显示文摘 | Xingqiang Liu Yueli Liu Wen Chen Jinchai Li Lei Liao | 2012 | Nanoscale Research Letters2012，，1： | 1 |
| 8 | Synthesis,Characterization and Photoluminescence of Well-Ordered ZnO Micropillars Grown on ZnO Buffer Layers显示文摘Using ZnO buffer layers prepared by simply thermal oxidation of ion beam sputtered Zn films, highly oriented and uniformly aligned single-crystalline ZnO micropillars arrays have been synthesized by thermal evaporation of Zn powder with free catalysts at low temperature of 430 ℃. The ZnO micropillars show sharp hexagonal umbrella-like tips with thin ZnO nanowire grown on the tips. The umbrella-like tips grow in a layer-by-layer mode along the direction of [001]. The growth mechanism has been discussed. The formation of the micropillars basically de-pends on the gradually decreasing Zn vapor pressure and subse-quently cooling process. The photoluminescence (PL) spectrum indicates a moderately good crystal quality of the ZnO micropil-lars. Our results may reinforce the understanding of the formation mechanism of different ZnO nano/microstructures. This kind of complex microstructures may find potential applications in multi-functional microdevices, optoelectronic and field emission devices. | LU Hongbing TIAN Yu HU Meifeng SHUAI Min LI Jinchai | 2007 | Wuhan University Journal of Natural Sciences2007，12，6： | 0 |
| 9 | Low Energy H^+ Effects on the Photovoltaic and Optical Properties of Polycrystalline Silicon Solar Cells显示文摘0IntroductionThepolycrystalinesilicon(poly-Si)solarcelisconsideredtobeoneofthemostpromisingcelscapableofachievingbothhighefic... | Li, Jinchai Wu, Xiangao Ye, Mingsheng Fu, Qiang Fan, Xiangjun | 1999 | Wuhan University Journal of Natural Sciences1999，4，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员