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| 1 | Diversity of oligotrich ciliates(Ciliophora, Spirotrichea) in the northern coast of South China Sea as revealed in LSU rDNA sequences显示文摘Although the taxonomy of oligotrich ciliates has been widely investigated,yet the species diversity remains poorly known.We newly designed a pair of oligotrich-specific LSU rDNA primers covering the 600-bp D1/D2 region,and it was effective for detecting oligotrich species.Using the primers,we constructed the cloning libraries to investigate the species diversity of oligotrichs in the northern coastal waters of the South China Sea.In total,165 oligotrich sequences were obtained from five widely separated sampling sites.Sixty operational taxonomic units(OTUs)were obtained at 99%similarity threshold,and low-abundance OTUs with no more than two sequences contributed most of these(about 78%).Our findings are consistent with previous morphological studies,Strombidium was found the most abundant and widely distributed genus in this area.In addition,the BLAST search in the NCBI database resulted in 95%OTUs matching with named oligotrich species in similarity below 99%.Therefore,oligotrich morphospecies diversity has been underestimated as low-abundance species,and the LSU rDNA oligotrich sequence database needs to be better promoted. | LU Kaihui LIU Weiwei Alan WARREN XU Yusen ZHU Changyu ZHAO Yan YI Zhenzhen | 2020 | Journal of Oceanology and Limnology2020，38，1： | 1 |
| 2 | Controlled on-chip fabrication of large-scale perovskite single crystal arrays for high-performance laser and photodetector integration显示文摘Metal halide perovskites possess intriguing optoelectronic properties,however,the lack of precise control of on-chip fabrication of the large-scale perovskite single crystal arrays restricts its application in integrated devices.Here,we report a space confinement and antisolvent-assisted crystallization method for the homogeneous perovskite single crystal arrays spanning 100 square centimeter areas.This method enables precise control over the crystal arrays,including different array shapes and resolutions with less than 10%-pixel position variation,tunable pixel dimensions from 2 to 8 pm as well as the in-plane rotation of each pixel.The crystal pixel could serve as a high-quality whispering gallery mode(WGM)microcavity with a quality factor of 2915 and a threshold of 4.14μJ cm^(-2).Through directly on-chip fabrication on the patterned electrodes,a vertical structured photodetector array is demonstrated with stable photoswitching behavior and the capability to image the input patterns,indicating the potential application in the integrated systems of this method. | Zhangsheng Xu Xun Han Wenqiang Wu Fangtao Li Ru Wang Hui Lu Qiuchun Lu Binghui Ge Ningyan Cheng Xiaoyi Li Guangjie Yao Hao Hong Kaihui Liu Caofeng Pan | 2023 | Light(Science & Applications)2023，12，4： | 0 |
| 3 | Correlating the electronic structures of metallic/semiconducting MoTe_(2)interface to its atomic structures显示文摘Contact interface properties are important in determining the performances of devices that are based on atomically thin two-dimensional(2D)materials,especially for those with short channels.Understanding the contact interface is therefore important to design better devices.Herein,we use scanning transmission electron microscopy,electron energy loss spectroscopy,and first-principles calculations to reveal the electronic structures within the metallic(1T)-semiconducting(2H)MoTe_(2)coplanar phase boundary across a wide spectral range and correlate its properties to atomic structures.We find that the 2 H-MoTe_(2)excitonic peaks cross the phase boundary into the 1 T phase within a range of approximately 150 nm.The1 T-MoTe_(2)crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit-cells.The plasmonic oscillations exhibit strong angle dependence,that is a red-shift ofπ+σ(approximately 0.3–1.2 e V)occurs within 4 nm at 1 T/2 H-MoTe_(2)boundaries with large tilt angles,but there is no shift at zero-tilted boundaries.These atomic-scale measurements reveal the structure–property relationships of the 1 T/2 H-MoTe_(2)boundary,providing useful information for phase boundary engineering and device development based on 2 D materials. | Bo Han Chen Yang Xiaolong Xu Yuehui Li Ruochen Shi Kaihui Liu Haicheng Wang Yu Ye Jing Lu Dapeng Yu Peng Gao | 2021 | National Science Review2021，8，2： | 0 |
| 4 | Versatile SrFeO_(x) for memristive neurons and synapses显示文摘Spiking neural network(SNN)consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information processing.However,it is challenging to develop memristive neurons and synapses based on the same material system because the required resistive switching(RS)characteristics are different.Here,it is shown that SrFeO_(x)(SFO),an intriguing material system exhibiting topotactic phase transformation between insulating brownmillerite(BM)SrFeO_(2).5 phase and conductive perovskite(PV)SrFeO_(3) phase,can be engineered into both neuronal and synaptic devices.Using a BM-SFO single layer as the RS medium,the Au/BM-SFO/SrRuO_(3)(SRO)memristor exhibits nonvolatile RS behavior originating from the formation/rupture of PV-SFO filaments in the BM-SFO matrix.By contrast,using a PV-SFO(matrix)/BM-SFO(interfacial layer)bilayer as the RS medium,the Au/PV-SFO/BM-SFO/SRO memristor exhibits volatile RS behavior originating from the interfacial BM-PV phase transformation.Synaptic and neuronal characteristics are further demonstrated in the Au/BM-SFO/SRO and Au/PV-SFO/BM-SFO/SRO memristors,respectively.Using the SFO-based synapses and neurons,fully memristive SNNs are constructed by simulation,which show good performance on unsupervised image recognition.Our study suggests that SFO is a versatile material platform on which both neuronal and synaptic devices can be developed for constructing fully memristive SNNs. | Kaihui Chen Zhen Fan Jingjing Rao Wenjie Li Deming Wang Changjian Li Gaokuo Zhong Ruiqiang Tao Guo Tian Minghui Qin Min Zeng Xubing Lu Guofu Zhou Xingsen Gao Jun-Ming Liu | 2022 | Journal of Materiomics2022，8，5： | 0 |
| 5 | Layer-by-layer epitaxy of multi-layer MoS_(2) wafers显示文摘The 2D semiconductor of MoShas great potential for advanced electronics technologies beyond silicon.So far,high-quality monolayer MoSwafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown.In addition to the monolayer,multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer.However,achieving high-quality multi-layer MoSwafers remains a challenge.Here we report the growth of high-quality multi-layer Mo S_(2) 4-inch wafers via the layer-by-layer epitaxy process.The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six.Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers.Significant improvements in device performances were found in thicker-layer field-effect transistors(FETs),as expected.For example,the average field-effect mobility(μFE)at room temperature(RT)can increase from~80 cm·V·sfor monolayers to~110/145 cm·V·for bilayer/trilayer devices.The highest RTμFEof 234.7 cm·V·sand record-high on-current densities of 1.70 m A·μmat Vds=2V were also achieved in trilayer MoSFETs with a high on/off ratio of>107.Our work hence moves a step closer to practical applications of 2D MoSin electronics. | Qinqin Wang Jian Tang Xiaomei Li Jinpeng Tian Jing Liang Na Li Depeng Ji Lede Xian Yutuo Guo Lu Li Qinghua Zhang Yanbang Chu Zheng Wei Yanchong Zhao Luojun Du Hua Yu Xuedong Bai Lin Gu Kaihui Liu Wei Yang Rong Yang Dongxia Shi Guangyu Zhang | 2022 | National Science Review2022，9，6： | 0 |
| 6 | Polarized Water Driven Dynamic PN Junction-Based Direct-Current Generator显示文摘There is a rising prospective in harvesting energy from the environment,as in situ energy is required for the distributed sensors in the interconnected information society,among which the water flow energy is the most potential candidate as a clean and abundant mechanical source.However,for microscale and unordered movement of water,achieving a sustainable direct-current generating device with high output to drive the load element is still challenging,which requires for further exploration.Herein,we propose a dynamic PN water junction generator with moving water sandwiched between two semiconductors,which outputs a sustainable direct-current voltage of 0.3 V and a current of 0.64μA.The mechanism can be attributed to the dynamic polarization process of water as moving dielectric medium in the dynamic PN water junction,under the Fermi level difference of two semiconductors.We further demonstrate an encapsulated portable power-generating device with simple structure and continuous direct-current voltage output of 0.11 V,which exhibits its promising potential application in the field of wearable devices and the IoTs. | Yanghua Lu Yanfei Yan Xutao Yu Xu Zhou Sirui Feng Chi Xu Haonan Zheng Zunshan Yang Linjun Li Kaihui Liu Shisheng Lin | 2021 | Research2021，，1： | 0 |
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