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| 1 | Temperature-independent FBG pressure sensor with high sensitivity显示文摘 | Liu Lihui Zhang Hao Zhao Qida | | 0，，01： | 1 |
| 2 | Temperature-independent FBG pressure sensor with high sensitivity显示文摘 | Lihui Liu Hao Zhang Qida Zhao Yuliang Liu Fang Li | 2006 | Optical Fiber Technology2006，，1： | 1 |
| 3 | A LPG sensing system for leak detection of oil storage tanks显示文摘 | Lihui Liu Qida Zhao Luming Zhao | 2010 | Proc of SPIE2010，，： | 1 |
| 4 | A LPG sensing system for leak detection of oil storage tanks 显示文摘 | Lihui Liu Qida Zhao Luming Zhao | 2010 | Proc of SPIE2010，71，57157： | 1 |
| 5 | Temperature-independent FBG pressure sensor with high sensitivity显示文摘 | Lihui Liu Hao Zhang Qida Zhao Yuliang Liu Fang Li | 2006 | Optical Fiber Technology2006，，1： | 1 |
| 6 | An LPG sensing system for leak detec- tion of oil storage tanks 显示文摘 | LIU Lihui ZHAO Qida ZHAO Luming HE Yongtai LI Yanqiu | 2009 | International Conference on OpticM Instruments and Technology: Advanced Sensor Technologies and Applications2009，7157，： | 1 |
| 7 | A Novel Nanocomposite Particle of Hydroxyapatite and Silk Fibroin: Biomimetic Synthesis and Its Biocompatibility显示文摘 | Zhiqing Rui Zou Qida Liu Quanli Li Xinmin Chen Chen | 2010 | Journal of Nanomaterials2010，10，： | 1 |
| 8 | A LPFG Sensing System for Leak Detection of Oil Storage Tanks显示文摘 | Lihui Liu Qida Zhao Luming Zhao | | 0，，715： | 1 |
| 9 | Au(Ⅰ)-Catalyzed 6-endo-dig Cyclizations of Aromatic 1,5-Enynes to 2-(Naphthalen-2-yl)anilines Leading to Divergent Syntheses of Benzo[α]carbazole, Benzo[c,h]cinnoline and Dibenzo[i]phenanthridine Derivatives显示文摘A gold(Ⅰ)-catalyzed 6-endo-dig cyclization of aromatic 1,5-enynes was developed to synthesize 2-(naphthalen-2-yl)anilines.The functional group tolerance of this cyclization was examined systematically and a possible mechanism was proposed.The derivatization of 2-(naphthalen-2-yl)aniline was carried out to facile access to benzo[α]carbazole,benzo[c,h]cinnoline and dibenzo[i]phenanthridine derivatives in a divergent way. | Jiayue Fu Bingbing Li Xiugui Wang Qida Liang Xiaoshi Peng Lu Yang Tao Wan Xinxiu Wang Bin Lin Maosheng Cheng Yongxiang Liu | 2022 | Chinese Journal of Chemistry2022，40，1： | 0 |
| 10 | A Novel Maximum Resolved Shear Stress Gradient Criterion and Its Application for Crack Deflection Behavior in Polycrystalline Silicon Materials显示文摘In this paper,a development of new resolved shear stress gradient criteria is performed for the study of crack propagation behavior in polycrystalline materials with an emphasis on the effect of slip plane and slip direction.The prediction of crack deflection behavior by the maximum resolved shear stress gradient criterion shows good agreement with the experimental results.Comparison study for the prediction of crack propagation behavior in poly crystalline materials by other criteria demonstrates that the maximum resolved shear stress gradient criterion is superior to other fracture criteria.This suggests that the new criterion could be further applied for predicting the crack deflection behavior in other polycrystalline materials. | Yangbo Zhang Qida Liu Qun Li Yangdong Ni Yuanjie Yu Jean-Nicolas Jaubert Eric Lajoie-Mazenc Emmanuel Boyere Metais Thomas Hong Zuo | 2022 | Acta Mechanica Solida Sinica2022，35，3： | 0 |
| 11 | Device performance limit of monolayer SnSe_(2) MOSFET显示文摘Two-dimensional(2D)semiconductors are attractive channels to shrink the scale of field-effect transistors(FETs),and among which the anisotropic one is more advantageous for a higher on-state current(I_(on)).Monolayer(ML)SnSe_(2),as an abundant,economic,nontoxic,and stable two-dimensional material,possesses an anisotropic electronic nature.Herein,we study the device performances of the ML SnSe_(2) metal-oxide-semiconductor FETs(MOSFETs)and deduce their performance limit to an ultrashort gate length(L_(g))and ultralow supply voltage(V_(dd))by using the ab initio quantum transport simulation.An ultrahigh I_(on) of 5,660 and 3,145µA/µm is acquired for the n-type 10-nm-L_(g) ML SnSe_(2) MOSFET at V_(dd)=0.7 V for high-performance(HP)and low-power(LP)applications,respectively.Specifically,until L_(g) scales down to 2 and 3 nm,the MOSFETs(at V_(dd)=0.65 V)surpass I_(on),intrinsic delay time(τ),and power-delay product(PDP)of the International Roadmap for Device and Systems(IRDS,2020 version)for HP and LP devices for the year 2028.Moreover,the 5-nm-L_(g) ML SnSe_(2) MOSFET(at V_(dd)=0.4 V)fulfills the IRDS HP device and the 7-nm-L_(g) MOSFET(at V_(dd)=0.55 V)fulfills the IRDS LP device for the year 2034. | Hong Li Jiakun Liang Qida Wang Fengbin Liu Gang Zhou Tao Qing Shaohua Zhang Jing Lu | 2022 | Nano Research2022，15，3： | 0 |
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