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| 1 | Control of Formation of Lithological Reservoirs by Surrounding Mudstone显示文摘Taking the Jiyang depression as an example, this paper discusses the control of the formation of lithological reservoir by surrounding rocks by integrated application of geological analysis, physical simulation, and the analysis of oil & gas accumulation mechanism. Geological statistical shows that the major burial depth and interval of lithological reservoirs in the Jiyang depression are related to the hydrocarbon generation in and expulsion from the Lower Tertiary source rocks and the time of the formation of most lithological reservoirs coincides with the peak of hydrocarbon generation and expulsion. The lithological traps located in the center of effective source rocks are propitious to high oil saturation than those located on the margin of effective source rocks. The hydrocarbon charge degree of the lithological reservoir has a positive correlation with the intensity of hydrocarbon expulsion from surrounding source rocks. Geological analyses and NMR experiments also show that the oil saturation of surrounding source rocks control the hydrocarbon potential of lithological traps, and a critical value for oil saturation of surrounding mudstone is required, that is, when the oil saturation of surrounding mudstone is lower than this critical value, no oil and gas accumulate in the lithological trap. The control of surrounding mudstone on the oil-bearing properties of lithological reservoirs is also analyzed by the mechanisms of hydrocarbon generation and expulsion as well as accumulation. | Jiang Zhenxue Chen Dongxia Pang Xiongqi Zhang Jun Tian Fenghua | 2006 | Petroleum Science2006，3，2： | 7 |
| 2 | Synthesis and characterization of C3N4 hard films显示文摘 | Yousong Gu Yongping Zhang Xiangrong Chang Zhongzhuo Tian Nanxian Chen Dongxia Shi Xiufang Zhang Lei Yuan | 2000 | Science in China Series A: Mathematics2000，，2： | 1 |
| 3 | Stearic Acid/Polym Ethyl Methacrylate Composite as Form-Stable Phase Change Materials for Latent Heat Thermal Energy Storage 显示文摘 | WANG Yi TIAN Dongxia FENG Huixia | 2011 | Renewable Energy2011，36，6： | 1 |
| 4 | Understanding the dynamical-microphysical-electrical processes associated with severe thunderstorms over the Beijing metropolitan region显示文摘The Dynamical-microphysical-electrical Processes in Severe Thunderstorms and Lightning Hazards(STORM973)project conducted coordinated comprehensive field observations of thunderstorms in the Beijing metropolitan region(BMR)during the warm season from 2014 to 2018.The aim of the project was to understand how dynamical,microphysical and electrical processes interact in severe thunderstorms in the BMR,and how to assimilate lightning data in numerical weather prediction models to improve severe thunderstorm forecasts.The platforms used in the field campaign included the Beijing Lightning Network(BLNET,consisting of 16 stations),2 X-band dual linear polarimetric Doppler radars,and 4 laser raindrop spectrometers.The collaboration also made use of the China Meteorological Administration’s mesoscale meteorological observation network in the Beijing-Tianjin-Hebei region.Although diverse thunderstorm types were documented,it was found that squall lines and multicell storms were the two major categories of severe thunderstorms with frequent lightning activity and extreme rainfall or unexpected local short-duration heavy rainfall resulting in inundations in the central urban area,influenced by the terrain and environmental conditions.The flash density maximums were found in eastern Changping District,central and eastern Shunyi District,and the central urban area of Beijing,suggesting that the urban heat island effect has a crucial role in the intensification of thunderstorms over Beijing.In addition,the flash rate associated with super thunderstorms can reach hundreds of flashes per minute in the central city regions.The super(5%of the total),strong(35%),and weak(60%)thunderstorms contributed about 37%,56%,and 7%to the total flashes in the BMR,respectively.Owing to the close connection between lightning activity and the thermodynamic and microphysical characteristics of the thunderstorms,the lightning flash rate can be used as an indicator of severe weather events,such as hail and short-duration heavy rainfall.Lightning data can also be assimilated into numerical weather prediction models to help improve the forecasting of severe convection and precipitation at the cloud-resolved scale,through adjusting or correcting the thermodynamic and microphysical parameters of the model. | Xiushu QIE Shanfeng YUAN Zhixiong CHEN Dongfeng WANG Dongxia LIU Mengyu SUN Zhuling SUN Abhay SRIVASTAVA Hongbo ZHANG Jingyu LU Hui XIAO Yongheng BI Liang FENG Ye TIAN Yan XU Rubin JIANG Mingyuan LIU Xian XIAO Shu DUAN Debin SU Chengyun SUN Wenjing XU Yijun ZHANG Gaopeng LU Da-Lin ZHANG Yan YIN Ye YU | 2021 | Science China Earth Sciences2021，64，1： | 1 |
| 5 | Batch fabrication of MoS_(2) devices directly on growth substrates by step engineering显示文摘Monolayer molybdenum disulfide(MoS_(2))has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness,dangling-bond-free flat surface,and high electrical quality.Currently,high-quality monolayer MoS_(2)wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication,and thus transfer processes to a suitable substrate are typically required before the device can be processed.Here,we demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step engineering.By introducing substrate steps on growth substrate sapphire,high-κdielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS_(2).For the substrate with a maximum step density of 100μm^(−1),the gate capacitance can reach~1.87μF∙cm^(−2),while the interface trap state density(Dit)can be as low as~7.6×10^(10)cm^(−2)∙eV^(−1).The direct deposition of high-quality dielectric layers on grown monolayer MoS2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of>96%,holding great promise for large-scale twodimensional(2D)integrated circuits. | Lu Li Yalin Peng Jinpeng Tian Fanfan Wu Xiang Guo Na Li Wei Yang Dongxia Shi Luojun Du Guangyu Zhang | 2023 | Nano Research2023，16，11： | 0 |
| 6 | Layer-by-layer epitaxy of multi-layer MoS_(2) wafers显示文摘The 2D semiconductor of MoShas great potential for advanced electronics technologies beyond silicon.So far,high-quality monolayer MoSwafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown.In addition to the monolayer,multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer.However,achieving high-quality multi-layer MoSwafers remains a challenge.Here we report the growth of high-quality multi-layer Mo S_(2) 4-inch wafers via the layer-by-layer epitaxy process.The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six.Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers.Significant improvements in device performances were found in thicker-layer field-effect transistors(FETs),as expected.For example,the average field-effect mobility(μFE)at room temperature(RT)can increase from~80 cm·V·sfor monolayers to~110/145 cm·V·for bilayer/trilayer devices.The highest RTμFEof 234.7 cm·V·sand record-high on-current densities of 1.70 m A·μmat Vds=2V were also achieved in trilayer MoSFETs with a high on/off ratio of>107.Our work hence moves a step closer to practical applications of 2D MoSin electronics. | Qinqin Wang Jian Tang Xiaomei Li Jinpeng Tian Jing Liang Na Li Depeng Ji Lede Xian Yutuo Guo Lu Li Qinghua Zhang Yanbang Chu Zheng Wei Yanchong Zhao Luojun Du Hua Yu Xuedong Bai Lin Gu Kaihui Liu Wei Yang Rong Yang Dongxia Shi Guangyu Zhang | 2022 | National Science Review2022，9，6： | 0 |
| 7 | Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor显示文摘Excitons dominate the photonic and optoelectronic properties of a material.Although significant advancements exist in understanding various types of excitons,progress on excitons that are indirect in both real-and momentum-spaces is still limited.Here,we demonstrate the real-and momentum-indirect neutral and charged excitons(including their phonon replicas)in a multi-valley semiconductor of bilayer MoS_(2),by performing electric-field/doping-density dependent photoluminescence.Together with first-principles calculations,we uncover that the observed real-and momentum-indirect exciton involves electron/hole from K/Γvalley,solving the longstanding controversy of its momentum origin.Remarkably,the binding energy of real-and momentum-indirect charged exciton is extremely large(i.e.,~59 meV),more than twice that of real-and momentum-direct charged exciton(i.e.,~24 meV).The giant binding energy,along with the electrical tunability and long lifetime,endows real-and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics. | Zhiheng Huang Yuhui Li Tao Bo Yanchong Zhao Fanfan Wu Lu Li Yalong Yuan Yiru Ji Le Liu Jinpeng Tian Yanbang Chu Xiaozhou Zan Yalin Peng Xiuzhen Li Yangkun Zhang Kenji Watanabe Takashi Taniguchi Zhipei Sun Wei Yang Dongxia Shi Shixuan Du Luojun Du Guangyu Zhang | 2023 | National Science Open2023，2，4： | 0 |
| 8 | Carbon Nitride Films Deposited on Pt Substrates byMicrowave Plasma Chemical Vapor Deposition显示文摘Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C3N4 and β -C3N4. The films are a mixture of α-C3N4 and β -C3N4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa. | Yongping Zhang Yousong Gu Xiangrong Chang Zhongzhuo Tian Dongxia Shi Xiufang Zhanga Lei Yuan Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China Beijing Laboratory of Vacuum Physics, Institut | 2000 | International Journal of Minerals,Metallurgy and Materials2000，14，1： | 0 |
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