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| 1 | Scanning probe microscopy in probing low-dimensional carbon-based nanostructures and nanomaterials显示文摘Carbon,as an indispensable chemical element on Earth,has diverse covalent bonding ability,which enables construction of extensive pivotal carbon-based structures in multiple scientific fields.The extraordinary physicochemical properties presented by pioneering synthetic carbon allotropes,typically including fullerenes,carbon nanotubes,and graphene,have stimulated broad interest in fabrication of carbon-based nanostructures and nanomaterials.Accurate regulation of topology,size,and shape,as well as controllably embedding target sp^(n)-hybridized carbons in molecular skeletons,is significant for tailoring their structures and consequent properties and requires atomic precision in their preparation.Scanning probe microscopy(SPM),combined with on-surface synthesis strategy,has demonstrated its capabilities in fabrication of various carbon-based nanostructures and nanomaterials with atomic precision,which has long been elusive for conventional solution-phase synthesis due to realistic obstacles in solubility,isolation,purification,etc.More intriguingly,atom manipulation via an SPM tip allows unique access to local production of highly reactive carbon-based nanostructures.In addition,SPM provides topographic information of carbon-based nanostructures as well as their characteristic electronic structures with unprecedented submolecular resolution in real space.In this review,we overview recent exciting progress in the delicate application of SPM in probing low-dimensional carbon-based nanostructures and nanomaterials,which will open an avenue for the exploration and development of elusive and undiscovered carbon-based nanomaterials. | Chi Zhang Zewei Yi Wei Xu | 2022 | Materials Futures2022，1，3： | 0 |
| 2 | A geometric model of faulted detachment folding with pure shear and its application in the Tarim Basin, NW China显示文摘 | Zewei YAO Guangyu HE Xiaoli ZHENG Chuanwan DONG Zicheng CAO Suju YANG Yi GU | 2017 | Frontiers of Earth Science2017，11，2： | 0 |
| 3 | Water-based synthesis of nanoscale hierarchical metal-organic frameworks:Boosting adsorption and catalytic performance显示文摘The combination of nano sizes,large pore sizes and green synthesis is recognized as one of the most crucial and challenging problems in constructing metal-organic frameworks(MOFs).Herein,a water-based strategy is proposed for the synthesis of nanoscale hierarchical MOFs(NH-MOFs)with high crystallinity and excellent stability.This approach allows the morphology and porosity of MOFs to be fine tuned,thereby enabling the nanoscale crystal generation and a well-defined hierarchical system.The aqueous solution facilitates rapid nucleation kinetics,and the introduced modulator acts as a deprotonation agent to accelerate the deprotonation of the organic ligand as well as a structure-directing agent(SDA)to guide the formation of hierarchical networks.The assynthesized NH-MOFs(NH-ZIF-67)were assessed as efficient adsorbents and heterogeneous catalysts to facilitate the diffusion of guest molecules,outperforming the parent microZIF-67.This study focuses on understanding the NH-MOF growth rules,which could allow tailor-designing NH-MOFs for various functions. | Yi Yu Zewei Liu Xiaofei Chen Shujun Liu Chongxiong Duan Hongxia Xi | 2023 | Nano Materials Science2023，5，4： | 0 |
| 4 | On-Surface Synthesis of Na-Porphyrins Using NaCl as a Convenient Na Source显示文摘Metallo-porphyrins with different metal centers display unique properties and are essential in various biological and chemical processes.Enormous efforts have been devoted to enriching the family of metallo-porphyrins on surfaces mainly through metalation processes within porphyrins and exogenous pure metals or intrinsic surface adatoms,which have focused on transition elements.However,less attention has been paid to the synthesis of alkali-metal-based porphyrins on a surface.Herein,by a combination of scanning tunneling microscopy(STM)imaging/manipulations and density functional theory(DFT)calculations,we report the fabrication of Na-porphyrins on Au(111)by introducing NaCl,i.e.,two double-layered Na-centered porphyrins.Moreover,the interconversion between them was realized by precise STM manipulations.Our results demonstrate the feasibility of metalation by applying inorganic salt,which would serve as a promising strategy to embed intramolecular metal components into porphyrins for further functionalization and modification. | Zewei Yi Chi Zhang Zhaoyu Zhang Rujia Hou Yuan Guo Wei Xu | 2023 | Precision Chemistry2023，1，4： | 0 |
| 5 | A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance显示文摘A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects. | Moufu Kong Zewei Hu Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang | 2023 | Journal of Semiconductors2023，44，5： | 0 |
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