|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Three - dimensional shape measure and calibration for fringe projection by con-sidering unequal height of the projector and the camera 显示文摘 | ZHU FEIPENG SHI HONGJIAN BAI PENGXIANG | 2011 | Applied Optics2011，50，11： | 1 |
| 2 | An invasive zone in human liver cancer identified by Stereo-seq promotes hepatocyte–tumor cell crosstalk,local immunosuppression and tumor progression显示文摘Dissecting and understanding the cancer ecosystem,especially that around the tumor margins,which have strong implications for tumor cell infiltration and invasion,are essential for exploring the mechanisms of tumor metastasis and developing effective new treatments.Using a novel tumor border scanning and digitization model enabled by nanoscale resolution-SpaTial Enhanced REsolution Omics-sequencing(Stereo-seq),we identified a 500µm-wide zone centered around the tumor border in patients with liver cancer,referred to as“the invasive zone”.We detected strong immunosuppression,metabolic reprogramming,and severely damaged hepatocytes in this zone.We also identified a subpopulation of damaged hepatocytes with increased expression of serum amyloid A1 and A2(referred to collectively as SAAs)located close to the border on the paratumor side.Overexpression of CXCL6 in adjacent malignant cells could induce activation of the JAK-STAT3 pathway in nearby hepatocytes,which subsequently caused SAAs’overexpression in these hepatocytes.Furthermore,overexpression and secretion of SAAs by hepatocytes in the invasive zone could lead to the recruitment of macrophages and M2 polarization,further promoting local immunosuppression,potentially resulting in tumor progression.Clinical association analysis in additional five independent cohorts of patients with primary and secondary liver cancer(n=423)showed that patients with overexpression of SAAs in the invasive zone had a worse prognosis.Further in vivo experiments using mouse liver tumor models in situ confirmed that the knockdown of genes encoding SAAs in hepatocytes decreased macrophage accumulation around the tumor border and delayed tumor growth.The identification and characterization of a novel invasive zone in human cancer patients not only add an important layer of understanding regarding the mechanisms of tumor invasion and metastasis,but may also pave the way for developing novel therapeutic strategies for advanced liver cancer and other solid tumors. | Liang Wu Jiayan Yan Yinqi Bai Feiyu Chen Xuanxuan Zou Jiangshan Xu Ao Huang Liangzhen Hou Yu Zhong Zehua Jing Qichao Yu Xiaorui Zhou Zhifeng Jiang Chunqing Wang Mengnan Cheng Yuan Ji Yingyong Hou Rongkui Luo Qinqin Li Liang Wu Jianwen Cheng Pengxiang Wang Dezhen Guo Waidong Huang Junjie Lei Shang Liu Yizhen Yan Yiling Chen Sha Liao Yuxiang Li Haixiang Sun Na Yao Xiangyu Zhang Shiyu Zhang Xi Chen Yang Yu Yao Li Fengming Liu Zheng Wang Shaolai Zhou Huanming Yang Shuang Yang Xun Xu Longqi Liu Qiang Gao Zhaoyou Tang Xiangdong Wang Jian Wang Jia Fan Shiping Liu Xinrong Yang Ao Chen Jian Zhou | 2023 | Cell Research2023，33，8： | 1 |
| 3 | Two-Dimensional Pnictogen for Field-Effect Transistors显示文摘Two-dimensional(2D)layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford.2D pnictogen,group-VA atomic sheet(including phosphorene,arsenene,antimonene,and bismuthene)is believed to be a competitive candidate for next-generation logic devices.This is due to their intriguing physical and chemical properties,such as tunable midrange bandgap and controllable stability.Since the first black phosphorus fieldeffect transistor(FET)demo in 2014,there has been abundant exciting research advancement on the fundamental properties,preparation methods,and related electronic applications of 2D pnictogen.Herein,we review the recent progress in both material and device aspects of 2D pnictogen FETs.This includes a brief survey on the crystal structure,electronic properties and synthesis,or growth experiments.With more device orientation,this review emphasizes experimental fabrication,performance enhancing approaches,and configuration engineering of 2D pnictogen FETs.At the end,this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics. | Wenhan Zhou Jiayi Chen Pengxiang Bai Shiying Guo Shengli Zhang Xiufeng Song Li Tao Haibo Zeng | 2019 | Research2019，，1： | 1 |
| 4 | Stress compensation based on interfacial nanostructures for stable perovskite solar cells显示文摘The long-term stability issue of halide perovskite solar cells hinders their commercialization.The residual stress-strain affects device stability,which is derived from the mismatched thermophysical and mechanical properties between adjacent layers.In this work,we introduced the Rb_(2)CO_(3)layer at the interface of SnO_(2)/perovskite with the hierarchy morphology of snowflake-like microislands and dendritic nanostructures.With a suitable thermal expansion coefficient,the Rb_(2)CO_(3)layer benefits the interfacial stress relaxation and results in a compressive stress-strain in the perovskite layer.Moreover,reduced nonradiative recombination losses and optimized band alignment were achieved.An enhancement of open-circuit voltage from 1.087 to 1.153 V in the resultant device was witnessed,which led to power conversion efficiency(PCE)of 22.7%(active area of 0.08313 cm^(2))and 20.6%(1 cm2).Moreover,these devices retained 95%of its initial PCE under the maximum power point tracking(MPPT)after 2700 h.It suggests inorganic materials with high thermal expansion coefficients and specific nanostructures are promising candidates to optimize interfacial mechanics,which improves the operational stability of perovskite cells. | Cheng Zhu Xi Wang Hangxuan Li Chenyue Wang Ziyan Gao Pengxiang Zhang Xiuxiu Niu Nengxu Li Zipeng Xu Zhenhuang Su Yihua Chen Huachao Zai Haipeng Xie Yizhou Zhao Ning Yang Guilin Liu Xueyun Wang Huanping Zhou Jiawang Hong Xingyu Gao Yang Bai Qi Chen | 2023 | Interdisciplinary Materials2023，2，2： | 0 |
| 5 | Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations显示文摘As a large family of 2D materials, transition metal dichalcogenides(TMDs) have stimulated numerous works owing to their attractive properties. The replacement of constituent elements could promote the discovery and fabrication of new nanofilm in this family. Using precious metals, such as platinum and palladium, to serve as transition metals combined with chalcogen is a new approach to explore novel TMDs. Also, the proportion between transition metal and chalcogen atoms is found not only to exist in conventional form of 1 : 2. Herein, we reported a comprehensive study of a new 2D precious metal selenide, namely AuSe monolayer. Based on density functional theory, our result indicated that AuSe monolayer is a semiconductor with indirect band-gap of 2.0 eV, which possesses superior dynamic stability and thermodynamic stability with cohesive energy up to–7.87 eV/atom. Moreover, it has been confirmed that ionic bonding predominates in Au–Se bonds and absorption peaks in all directions distribute in the deep ultraviolet region. In addition, both vibration modes dominating marked Raman peaks are parallel to the 2D plane. | Pengxiang Bai Shiying Guo Shengli Zhang Hengze Qu Wenhan Zhou Haibo Zeng | 2019 | Journal of Semiconductors2019，40，6： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员