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| 1 | Metallurgical challenges in microelectronic 3D IC packaging technology for future consumer electronic products显示文摘Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technol-ogy are discussed. Using uni-directional <111> oriented nanotwinned Cu, the controlled growth of oriented Cu6Sn5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure. | K. N. TU TIAN Tian | 2013 | Science China(Technological Sciences)2013，56，7： | 14 |
| 2 | MRCP of congenital pancreaticobiliary malformation显示文摘 | T. Kamisawa Y. Tu N. Egawa K. Tsuruta A. Okamoto N. Kamata | 2007 | Abdominal Imaging2007，，1： | 2 |
| 3 | Molecular phylogeny of modern coxsackievirus A16显示文摘 | D. Perera M. A. Yusof Y. Podin M. H. Ooi N. T. T. Thao K. K. Wong A. Zaki K. B. Chua Y. A. Malik P. V. Tu N. T. K. Tien P. Puthavathana P. C. McMinn M. J. Cardosa | 2007 | Archives of Virology2007，，6： | 1 |
| 4 | Electromigration in solder joints and solder lines显示文摘 | H. Gan W. J. Choi G. Xu K. N. Tu | 2002 | JOM2002，，6： | 1 |
| 5 | Morphological stability of solder reaction products in flip chip technology显示文摘 | K. N. Tu Fiona Ku T. Y. Lee | 2001 | Journal of Electronic Materials2001，，9： | 1 |
| 6 | Constitutive and tissue-specific differential expression of the cryIA(b) gene in transgenic rice plants conferring resistance to rice insect pest显示文摘 | K. Datta A. Vasquez J. Tu L. Torrizo M. F. Alam N. Oliva E. Abrigo G. S. Khush S. K. Datta | 1998 | TAG Theoretical and Applied Genetics (-)1998，，1： | 1 |
| 7 | Molecular phylogeny of modern coxsackievirus A16显示文摘 | D. Perera M. A. Yusof Y. Podin M. H. Ooi N. T. T. Thao K. K. Wong A. Zaki K. B. Chua Y. A. Malik P. V. Tu N. T. K. Tien P. Puthavathana P. C. McMinn M. J. Cardosa | 2007 | Archives of Virology2007，，6： | 1 |
| 8 | Morphology, kinetics, and thermodynamics of solid-state aging of eutectic SnPb and Pb-free solders (Sn–3.5Ag, Sn–3.8Ag–0.7Cu and Sn–0.7Cu) on Cu显示文摘 | T. Y. Lee W. J. Choi K. N. Tu J. W. Jang S. M. Kuo J. K. Lin D. R. Frear K. Zeng J. K. Kivilahti | 2002 | Journal of Materials Research2002，，2： | 1 |
| 9 | Transgenic insect-resistant maintainer line (IR68899B) for improvement of hybrid rice显示文摘 | M. F. Alam K. Datta E. Abrigo N. Oliva J. Tu S. S. Virmani S. K. Datta | 1999 | Plant Cell Reports (-)1999，，7： | 1 |
| 10 | Stress analysis of spontaneous Sn whisker growth显示文摘 | K. N. Tu Chih Chen Albert T. Wu | 2007 | Journal of Materials Science: Materials in Electronics (-)2007，，1： | 1 |
| 11 | MRCP of congenital pancreaticobiliary malformation显示文摘 | T. Kamisawa Y. Tu N. Egawa K. Tsuruta A. Okamoto N. Kamata | 2007 | Abdominal Imaging2007，，1： | 1 |
| 12 | A Novel Methodology for Computer-Aided Process Planning显示文摘 | X. N. Chu S. K. Tso Y. L. Tu | 2000 | International Journal of Advanced Manufacturing Technology2000，，10： | 1 |
| 13 | Constitutive and tissue-specific differential expression of the cryIA(b) gene in transgenic rice plants conferring resistance to rice insect pest显示文摘 | K. Datta A. Vasquez J. Tu L. Torrizo M. F. Alam N. Oliva E. Abrigo G. S. Khush S. K. Datta | 1998 | TAG Theoretical and Applied Genetics (-)1998，，1： | 1 |
| 14 | Molecular phylogeny of modern coxsackievirus A16显示文摘 | D. Perera M. A. Yusof Y. Podin M. H. Ooi N. T. T. Thao K. K. Wong A. Zaki K. B. Chua Y. A. Malik P. V. Tu N. T. K. Tien P. Puthavathana P. C. McMinn M. J. Cardosa | 2007 | Archives of Virology2007，，6： | 1 |
| 15 | Engineering Design of High Quality GaN Epitaxy on Silicon Substrate Using Varying GaN/AlGaN Composite Buffer Structures显示文摘High quality GaN epitaxy thin films have been desired for the energy-efficient,solid-state semiconductor illuminating devices.Silicon substrates offer high crystal quality,low wafer cost,large wafer size,and potential integration with the well-established silicon processing technologies.However,due to the large mismatch in lattice constants and thermal expansion coefficients,it is still challenging to grow high quality GaN on silicon substrates.In this study,high quality GaN epitaxy has been engineering designed to grow on Si(111)substrate using varying GaN/AlGaN composite buffer structures by an Axitron 200 metal-organic vapor phase epitaxy deposition system.A thin AlN seed layer of 25 nm was firstly grown at 720℃.AlGaN layer of different thickness was then grown at 1050℃with subsequent GaN thin film until the total thickness reached 500 nm.The thickness of the subsequent GaN thin film could be increased by reducing the AlGaN thickness in the composite buffer structures.The results have shown that the lower GaN/AlGaN thickness ratio would decrease the dislocation density and provide crack-free,mirror-like upper GaN crystal thin film.On the other hand,the GaN/AlGaN thickness ratio could be designed to be 2-6 to balance the processing cost and the thin film quality for engineering applications.The dislocation density has been about 2×10 9 cm-2.In addition,dislocation close loop was observed near the GaN/AlGaN interface.The annihilation mechanism could be depicted by the reduction in dislocation strain energy. | Wu, G. M. Tu, K. N. Kuo, C. C. | 2012 | 稀有金属材料与工程2012，41，S1： | 0 |
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