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| 1 | An overview of resistive random access memory devices显示文摘With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given. | LI YingTao LONG ShiBing LIU Qi LU HangBing LIU Su LIU Ming | 2011 | Chinese Science Bulletin2011，56，28： | 9 |
| 2 | Improving the electrical performance of resistive switching memory using doping technology显示文摘In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM. | WANG Yan LIU Oi LU HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming | 2012 | Chinese Science Bulletin2012，57，11： | 6 |
| 3 | Toward emerging gallium oxide semiconductors:A roadmap显示文摘Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth processes,material characteristics,and applications of Ga_(2)O_(3).Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors,large-size and high-quality��-Ga_(2)O_(3) single crystals can be efficiently grown with a low cost,making them highly competitive.Thanks to the availability of high-quality single crystals,epi-taxial films,and rich material systems,high-performance semiconductor devices based on Ga_(2)O_(3) go through a booming development in recent years.The defects and interfaces of Ga_(2)O_(3) are comprehensively analyzed owing to their significant influence on practical applications.In this study,the two most common applications of Ga_(2)O_(3) materials are introduced.The high breakdown electric field,high working temperature,and excellent Baliga’s figure-of-merit of Ga_(2)O_(3) represent an inspiring prospect for power electronic devices.In addition,the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress.Finally,the summary,challenges,and prospects of the Ga_(2)O_(3) materials and devices are presented and discussed. | Yuan Yuan Weibing Hao Wenxiang Mu Zhengpeng Wang Xuanhu Chen Qi Liu Guangwei Xu Chenlu Wang Hong Zhou Yanni Zou Xiaolong Zhao Zhitai Jia Jiandong Ye Jincheng Zhang Shibing Long Xutang Tao Rong Zhang Yue Hao | 2021 | Fundamental Research2021，1，6： | 5 |
| 4 | Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material显示文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed. | Hang Dong Huiwen Xue Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu | 2019 | Journal of Semiconductors2019，40，1： | 4 |
| 5 | A 10×10 deep ultraviolet light-emitting micro-LED array显示文摘In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in diameter.Strikingly,the array demonstrates a significant enhancement of total light output power by nearly 52%at the injection current of 100 mA,in comparison to a conventional large LED chip whose emitting area is the same as the array.A much higher(~22%)peak external quantum efficiency,as well as a smaller efficiency droop forμ-LED array,was also achieved.The numerical calculation reveals that the performance boost can be attributed to the higher light extraction efficiency at the edge of eachμ-LED.Additionally,the far-field pattern measurement shows that theμ-LED array possesses a better forward directionality of emission.These findings shed light on the enhancement of the DUV LEDs performance and provide new insights in controlling the light behavior of theμ-LEDs. | Huabin Yu Muhammad Hunain Memon Hongfeng Jia Haochen Zhang Meng Tian Shi Fang Danhao Wang Yang Kang Shudan Xiao Shibing Long Haiding Sun | 2022 | Journal of Semiconductors2022，43，6： | 3 |
| 6 | Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement显示文摘The combination of capacitance-and current-voltage(CV/IV) measurements is used to analyze trap generation in silicon-nanocrystal memory devices during Fowler-Nordheim(FN) programming/erasing cycling.CV and IV curves are measured after certain P/E cycles.The flatband voltage(Vfb) and the threshold voltage(Vth) are extracted from CV curves by solving one-dimensional Schr?dinger and Poisson equations.Both hole and electron trappings are observed in the tunneling SiO2.They show up in the accumulation and the inversion,respectively.By fitting FN tunneling current,the area densities of cycling-induced electron traps in the blocking oxide and in the tunneling oxide are finally determined. | YANG XiaoNan ZHANG ManHong WANG Yong HUO ZongLiang LONG ShiBing ZHANG Bo LIU Jing LIU Ming | 2012 | Science China(Technological Sciences)2012，55，3： | 3 |
| 7 | Approaches for improving the performance of filament-type resistive switching memory显示文摘Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced. | LIAN WenTai LONG ShiBing LU HangBing LIU Qi LI YingTao ZHANG Sen WANG Yan HUO ZongLiang DAI YueHua CHEN JunNing LIU Ming | 2011 | Chinese Science Bulletin2011，56，4： | 2 |
| 8 | Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions 显示文摘 | Liu Qi Long Shibing Wang Wei | 2009 | IEEE Electron Device Let- ters2009，30，12： | 1 |
| 9 | Controllable growth of nanoseale conductive filaments in solid-electro- lyte-based ReRAM by using a metal nanocrystal covered bottom electrode显示文摘 | Liu Qi Long Shibing Lv Hangbing | 2010 | American Chemical Society2010，4，10： | 1 |
| 10 | Investigation of LRS dependence on the retention of HRS in CBRAM显示文摘 | Xiaoxin Xu Hangbing Lv Hongtao Liu Qing Luo Tiancheng Gong Ming Wang Guoming Wang Meiyun Zhang Yang Li Qi Liu Shibing Long Ming Liu | 2015 | Nanoscale Research Letters2015，，： | 1 |
| 11 | An overview of the switching parameter variation of RRAM显示文摘Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed. | Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu | 2014 | Chinese Science Bulletin2014，59，36： | 1 |
| 12 | Unipolar resistive switching of Au+-implanted ZrO2 films显示文摘 | Liu Qi Long Shibing Guan Weihua Zhang Sen Liu Ming Chen Junning | 2009 | Journal of Semiconductors2009，，4： | 1 |
| 13 | Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano- crossbar memory array显示文摘闩数组为完成二终端的功能的设备的高密度的集成提供一条划算的途径。然而,溜的当前的问题,能导致读的失败,是在闩数组的严重挑战。从 unselected 房间禁止溜的水流,单个选择设备的集成是必要的。在这个工作,我们报导展出在氧化物调节缺点的集中形成的 trapezoidal 乐队结构的一个新奇的道 x -based 选购者。突出的特征象高当前的密度那样(1 麻省穩 ? 楤瑳楲畢楴湯 ? 湩楳敤琠敨瘠物獵戭獡摥丠獐漠 ? 楳業湡瘠物獵? | Qing Luo Xiaoxin Xu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Ling Li Ming Liu | 2017 | Nano Research2017，10，10： | 1 |
| 14 | Progress in rectifying-based RRAM passive crossbar array显示文摘Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed. | ZHANG KangWei LONG ShiBing LIU Qi LUE HangBing LI YingTao WANG Yan LIAN WenTai WANG Ming ZHANG Sen LIU Ming | 2011 | Science China(Technological Sciences)2011，54，4： | 1 |
| 15 | Fully Printed High‑Performance n‑Type Metal Oxide Thin‑Film Transistors Utilizing Coffee‑Ring Effect显示文摘Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”effect.Here,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.ITO has high electrical conductivity and is generally used as an electrode material.However,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors.The ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact electrodes.The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias tests.More remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications. | Kun Liang Dingwei Li Huihui Ren Momo Zhao Hong Wang Mengfan Ding Guangwei Xu Xiaolong Zhao Shibing Long Siyuan Zhu Pei Sheng Wenbin Li Xiao Lin Bowen Zhu | 2021 | Nano-Micro Letters2021，13，11： | 1 |
| 16 | Preface to Special Issue on Towards High Performance Ga_(2)O_(3) Electronics: Epitaxial Growth and Power Devices(Ⅰ)显示文摘There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications. | Genquan Han Shibing Long Yuhao Zhang Yibo Wang Zhongming Wei | 2023 | Journal of Semiconductors2023，44，6： | 0 |
| 17 | Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing显示文摘Memristor based artificial synapses have demonstrated great potential for bioinspired neuromorphic computing in recent years.To emulate synaptic functions, such as short-term plasticity and long-term potentiation/depression, square pulses or combined complex pulse groups are applied on the device. However, in biological neuron systems, the action potentials are analog pulses with similar amplitudes. Furthermore, in biological systems, the intensity of the stimulus is coded into the frequency of action potentials to modulate the weight of synapses. Toward this programming method, we applied a series of analog spiking pulses with same peaks on Ru/TiO_x/TiN 3D memristor to emulate synaptic functions, such as long-term potentiation/depression and synaptic saturation. Moreover, we demonstrated the conductance change of the device under different stimulus frequencies of analog spiking pulses and described the statistical results of conductance change value, which shows that the device conductance has a larger change value under a higher spiking frequency with identical pulse number. These results show that the analog spiking pulses can well modulate the memristor-based synaptic weight and have a great potential for bioinspired computing in the future. | Qi Liu XuMeng Zhang Qing LUO XiaoLong Zhao HangBing Lv ShiBing Long Ming Liu | 2018 | Science China(Physics,Mechanics & Astronomy)2018，61，8： | 0 |
| 18 | Breaking the responsivity-speed dilemma of a-GaO_(x) photodetector by alternating gate modulation显示文摘The gallium oxide(Ga_(2)O_(3))based photodetectors are usually confronted with the typical challenge of the responsivity-speed(RS)dilemma,namely high photocurrent induces a long decay time,as shown in Figure 1(a).The RS dilemma involves a trade-off issue,which is independent of photoelectric materials. | Zhongfang ZHANG Pengju TAN Xiaohu HOU Xiaolan MA Mengfan DING Shunjie YU Guangwei XU Xiaolong ZHAO Shibing LONG | 2023 | Science China(Information Sciences)2023，66，12： | 0 |
| 19 | Modulation of Microstructure and Charge Transport in Polymer Monolayer Transistors by Solution Aging显示文摘A few monolayers of organic semiconductors adjacent to the dielectric layer are of vital importance in organic field-effect transistors due to their dominant role in charge transport.In this report,the 2-nm-thick polymer monolayers based on poly(3-hexylthiophene)with different molecular weights(M_(n))were fabricated using dip-coating technique.During the monolayer(solid state)formation from the solution,a disorder-to-order transition of polymer conformation is observed through UV-vis absorption measurement.Meanwhile,high Mn polymer monolayer generates higher crystalline fibrillar microstructure than the low Mn one due to the strongerπ–πintermolecular packing between polymers.More importantly,the solution aging procedure is utilized to further improve the morphology of polymer monolayers.It is obvious that after aging for 6 d,both fiber dimension and density as well as conjugation length are significantly increased under the same processing conditions in comparison to the fresh solution,and consequently the field-effect mobilities are remarkably enhanced by 2—4 times.Note that the maximum mobility of 0.027 cm2·V^(–1)·s^(–1)is among the highest reported values for poly(3-hexylthiophene)monolayer transistors.These results demonstrate a simple but powerful strategy for boosting the device performance of polymer monolayer transistors. | Xuemei Lin Ruochen Liu Chenming Ding Junyang Deng Yifu Guo Shibing Long Ling Li Mengmeng Li | 2021 | Chinese Journal of Chemistry2021，39，11： | 0 |
| 20 | Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices显示文摘As one of the ultra-wide bandgap {UWBG)semiconducting materials,gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MWcm,which offers an alternative platform for various applications such as high performance power switches,RF amplifiers,solar blind photodetectors,and harsh environment signal processing. | Xutang Tao Jiandong Ye Shibing Long Zhitai Jia | 2019 | Journal of Semiconductors2019，40，1： | 0 |
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