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| 1 | Changes in the power spectrum of electrical signals in maize leaf induced by osmotic stress显示文摘To quantify the characteristics of the power spectrum of plant electrical signals, we defined the following concepts:spectral edge frequency (SEF), spectral center frequency (SCF), power index (PI) and power spectral entropy (PSE). These parameters were used to examine and quantify changes in the power spectrum of electrical signals in maize leaves under osmotic stress. In the absence of osmotic stress, the SEF of the electrical signal in maize leaves was approx. 0.2 Hz and the SCF was approx. 0.1 Hz. The electrical signal in maize leaves was mainly a slow wave signal with a frequency of 0-0.1 Hz. After 2 h osmotic stress, the SEF and SCF of the electrical signal increased to higher frequencies. The proportion of the fast wave frequency also increased to 0.1-0.2 Hz, resulting in a dramatic increase in PSE. We also found that the changes in PSE and SCF were significantly correlated during osmotic stress. We propose that the changes in the PSE and SCF in maize leaves can be used as a sensitive signal indicating water deficit in leaf cells under osmotic stress. Thus, measurement of SCF or PSE of electrical signals in maize leaves could be used to develop early warning and rapid diagnosis techniques for the water demands of plants. | ZHANG XiaoHui YU NingMei XI Gang MENG XiaoLi | 2012 | Chinese Science Bulletin2012，57，4： | 13 |
| 2 | An Improved Global Shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor显示文摘An improved global shutter pixel structure with extended output range and linearity of compensation is proposed for CMOS image sensor. The potential switching of the sample and hold capacitor bottom plate outside the array is used to solve the problem of the serious swing limitation, which will attenuate the dynamic range of the image sensor. The non-linear problem caused by the substrate bias effect in the output process of the pixel source follower is solved by using the mirror FD point negative feedback self-establishment technology outside the array. The approach proposed in this paper has been verified in a global shutter CMOS image sensor with a scale of 1024×1024 pixels. The test results show that the output range is expanded from 0.95 V to 2 V, and the error introduced by the nonlinearity is sharply reduced from280 mV to 0.3 mV. Most importantly, the output range expansion circuit does not increase the additional pixel area and the power consumption. The power consumption of linearity correction circuit is only 23.1μW, accounting for less than 0.01% of the whole chip power consumption. | GUO Zhongjie YU Ningmei WU Longsheng | 2021 | Chinese Journal of Electronics2021，30，1： | 1 |
| 3 | Removal of heavy metal ions from wastewater by a novel HEA/AMPS copolymer hydrogel:prepa- ration,characterization, and mechanism 显示文摘 | Zhengkui Li Yueming Wang Ningmei Wu | 2013 | En- vironmental Science and Pollution Research2013，20，3： | 1 |
| 4 | Research on Column FPN and Black Level Calibration in Large Array CMOS Image Sensor显示文摘A technical investigation,research and implementation is presented to correct column fixed pattern noise and black level in large array Complementary metal oxide semiconductor(CMOS)image sensor.Through making a comparison among reported solution,and give large array CMOS image sensor design and considerations,according to our previous analysis on non-ideal factor and error source of piecewise Digital to analog converter(DAC)in multi-channels,an improving accurate piecewise DAC with adaptive switch technique is developed.The research theory has verified by a high dynamic range and low column Fixed pattern noise(FPN)CMOS image sensor prototype chip,which consisting of 8320×8320 pixel array was designed and fabricated in 55 nm CMOS 1P4M standard process.The chip active area is 48 mm×48 mm with a pixel size of 5.7μm×5.7μm.The measured results achieved a high intrinsic dynamic range of 75 d B,a low FPN and black level of 0.06%,a low photo response non-uniformity of 1.5%respectively,and an excellent raw sample image taken by the prototype sensor. | GUO Zhongjie YU Ningmei WU Longsheng | 2021 | Chinese Journal of Electronics2021，30，2： | 1 |
| 5 | Electrochemical denitrification and kinetics study using Ti/IrO 2 –TiO 2 –RuO 2 as the anode and Cu/Zn as the cathode显示文摘 | Nianwen Fan Zhengkui Li Lin Zhao Ningmei Wu Tao Zhou | 2013 | Chemical Engineering Journal2013，，： | 1 |
| 6 | The operational model of a network for managing patients with convulsive epilepsy in rural West China显示文摘 | Ling Liu Qin Zhang Zhiping Yao Xiaowen Wang Cairong Zhu Yali Gao Jun He Zhuo Wang Ningmei Zhang Wendyl D’Souza Dong Zhou | 2009 | Epilepsy and Behavior2009，，1： | 1 |
| 7 | Synthesis and characterization of poly (HEA/MALA) hydrogel and its application in removal of heavy metal ions from water 显示文摘 | Wu Ningmei Li Zhengkui | 2013 | Chemical Engineering Journal ( Amsterdam Netherlands)2013，，： | 1 |
| 8 | Synthesis and characterization of poly(HEA/MALA)hydrogel and its application in removal of heavy metal ions from water显示文摘 | Wu Ningmei Li Zhengkui | 2013 | Chemical Engineering Journal2013，，： | 1 |
| 9 | Global Ramp Uniformity Correction Method for Super-Large Array CMOS Image Sensors显示文摘Aiming at the problem of the non-uniformity of the ramp signal in the super-large array CMOS(complementary metal-oxide semiconductor)image sensors,a ramp uniformity correction method for CMOS image sensors is proposed in this paper.Based on the error storage technique,the ramp non-uniformity error is stored.And the input ramp signal of each column is shifted by level-shifting technique to eliminate the ramp non-uniformity error.Based on the 55 nm-1P4M CMOS process,this paper has completed the detailed circuit design and comprehensive simulation verification of the proposed method.Under the design conditions that the voltage range of the ramp signal is 1.4 V,the slope of the ramp signal is 71.908 V/ms,the number of pixels is 8192(H)×8192(V),and a single pixel size is 10μm,the correction method proposed in this paper reduces the ramp non-uniformity error from 7.89 mV to 36μV.The differential non-linearity of the ramp signal is+0.0013/−0.004 LSB and the integral non-linearity is+0.045/−0.021 LSB.The ramp uniformity correction method proposed in this paper reduces the ramp non-uniformity error by 99.54%on the basis of ensuring the high linearity of the ramp signal,without significantly increasing the chip area and without introducing additional power consumption.The column fixed-pattern noise is reduced from 1.9%to 0.01%.It provides theoretical support for the design of high-precision CMOS image sensors. | Ruiming XU Zhongjie GUO Suiyang LIU Ningmei YU | 2024 | Chinese Journal of Electronics2024，33，2： | 0 |
| 10 | Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor显示文摘High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting the technology of correlated double sample.A simple column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor is proposed in this paper.Based on the bottom plate sampling and fixed common level method,this novel design can avoid the offset nonuniformity between the two buffers.Also,the single buffer and switched capacitor technique can effectively suppress the charge sharing caused by the varied operating point.The proposed approach is experimentally verified in a 1024×1024 prototype chip designed and fabricated in 55 nm low power CMOS process.The measurement results show that the linear range is extended by 20%,the readout noise of bright and dark fields is reduced by 40%and 30%respectively,and the improved photo response nonuniformity is up to 1.16%.Finally,a raw sample image taken by the prototype sensor shows the excellent practical performance. | Zhongjie Guo Ningmei Yu Longsheng Wu | 2019 | Journal of Semiconductors2019，40，12： | 0 |
| 11 | Protein regulation mechanism of cold tolerance in Haemaphysalis longicornis显示文摘Ticks are external parasitic arthropods that can transmit a variety of pathogens by sucking blood.Low-temperature tolerance is essential for ticks to survive during the cold winter.Exploring the protein regulation mechanism of low-temperature tolerance of Haemaphysalis longicornis could help to explain how ticks survive in winter.In this study,the quantitative proteomics of several tissues of H.longicornis exposed to low temperature were studied by data independent acquisition technology.Totals of 3699,3422,and 1958 proteins were identified in the salivary gland,midgut,and ovary,respectively.The proteins involved in energy metabolism,cell signal transduction,protein synthesis and repair,and cytoskeleton synthesis changed under low-temperature stress.The comprehensive analysis of the protein regulation of multiple tissues of female ticks exposed to low temperature showed that maintaining cell homeostasis,maintaining cell viability,and enhancing cell tolerance were the most important means for ticks to maintain vital signs under low temperature.The expression of proteins involved in and regulating the above cell activities was the key to the survival of ticks under low temperatures.Through the analysis of a large amount of data,we found that the expression levels of arylamine N-acetyltransferase,inositol polyphosphate multikinase,and dual-specificity phosphatase were up-regulated under low temperature.We speculated that they might have important significance in low-temperature tolerance.Then,we performed RNA interference on the mRNA of these 3 proteins,and the results showed that the ability of female ticks to tolerate low temperatures decreased significantly. | Ningmei Wang Aimeng Ji Abolfazl Masoudi Shuang Li Yuhong Hu Yefei Zhang Zhijun Yu Han Wang Hui Wang Jingze Liu | 2023 | Insect Science2023，30，3： | 0 |
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