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| 1 | Effects of precursor moisture and inert N_2 atmosphere calcinations on structure and properties of alumina modified CeZrLaNd mixed oxides显示文摘CeO_2-ZrO_2 mixed oxides are widely used in the three-way catalysts due to their unique reversible oxygen storage and release capacity. Large surface area, high oxygen storage capacity and good thermal stability of cerium zirconium mixed oxides are the key properties for the automotive catalysts so as to meet the strict emission regulations. In this work, alumina modified CeZrLaNd mixed oxides were prepared by a co-precipitation method. The effects of moisture in precursor and inert N2 atmosphere during calcinations on the structure and properties were investigated by Brunauer-Emmett-Teller(BET) surface area measurements, X-ray diffraction(XRD), scanning electron microscopy(SEM), transmission electron microscopy(TEM), hydrogen temperature-programmed reduction(H_2-TPR), oxygen storage capacity(OSC), Raman spectroscopy, and X-ray photoelectron spectroscopy(XPS). The results show that the moisture in precursor during calcinations increases the crystal grain size of the cerium zirconium mixed oxides, improving the thermal stability. And the aged surface area of sample after being calcined at1000 ℃ for 4 h reaches 68.8 m^2/g(5.7% increase compared with the common sample). The inert N2 atmosphere endows a great pore-enlarging effect, which leads to high fresh surface area of 148.9 m2/g(13.5% increase compared with the common sample) and big pore volume of 0.5705 mL/g. The redox and oxygen storage capacity are also improved by inert N2 atmosphere with high OSC value of 241.06μmolO_2/g(41.3% increase compared with the common calcination), due to the abundant formation of the crystal defects and oxygen vacancies. | Meisheng Cui Zhizhe Zhai Hao Wang Yongke Hou Yongqi Zhang Xiaowei Huang | 2019 | Journal of Rare Earths2019，37，6： | 2 |
| 2 | Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition显示文摘In this work,(-201)β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD).It is revealed that theβ-Ga2O3 film grown on GaN possesses superior crystal quality,material homogeneity and surface morphology than the results of common heteroepitaxialβ-Ga2O3 film based on sapphire substrate.Further,the relevance between the crystal quality of epitaxialβ-Ga2O3 film and theβ-Ga2O3/GaN interface behavior is investigated.Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequentβ-Ga2O3 film.Moreover,the energy band structure ofβ-Ga2O3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained.The results in this work not only convincingly demonstrate the advantages ofβ-Ga2O3 films grown on GaN substrate,but also show the great application potential of MOCVDβ-Ga2O3/GaN heterostructures in microelectronic applications. | YaChao Zhang YiFan Li ZhiZhe Wang Rui Guo ShengRui Xu ChuanYang Liu ShengLei Zhao JinCheng Zhang Yue Hao | 2020 | Science China(Physics,Mechanics & Astronomy)2020，63，11： | 2 |
| 3 | An adaptive approach in digital distance protection显示文摘 | Zhang Zhizhe Chen Deshu | 1991 | IEEETrans on PowerDelivery1991，6，1： | 1 |
| 4 | Comparison of four kinds of extraction techniques and kinetics of microwave-assisted extraction of vanillin from Vanillaplanifolia Andrews显示文摘 | DONG Zhizhe GU Fenglin XU Fei | 2014 | Food Chemistry2014，149，： | 1 |
| 5 | The Present Situation and Future Development of Continuing Education inChina显示文摘 | CAO Zhizhe | 1999 | Continuing Education1999，，4： | 1 |
| 6 | Younger patients with chronic lymphocytic leukemia benefit from rituximabtreatment: A single center study in China显示文摘 | Zhenshu Xu Jinyan Zhang Shunquan Wu Zhihong Zheng Zhizhe Chen Rong Zhan | 2013 | Oncology Letters2013，，4： | 1 |
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