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| 1 | Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current显示文摘There is a great interest in monolithic 4H-Si C Junction Barrier Schottky(JBS) diodes with the capability of a high forward current for industrial power applications.In this paper,we report large-area monolithic 4H-Si C JBS diodes fabricated on a 10 μm 4H-Si C epitaxial layer doped to 6×1015 cm3.JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V,which corresponds to a current density of 1100 A/cm2.A near ideal breakdown voltage of 1.6 k V was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings(MFGR) termination,which is about 87.2% of the theoretical value.The differential specific-on resistance(RSP-ON) was measured to be 3.3 m cm2,leading to a FOM(VB2/RSP-ON) value of 0.78 GW/cm2,which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-Si C unipolar devices. | SONG QingWen YUAN Hao HAN Chao ZHANG YuMing TANG XiaoYan ZHANG YiMeng GUO Hui ZHANG YiMen JIA RenXu WANG YueHu | 2015 | Science China(Technological Sciences)2015，58，8： | 2 |
| 2 | Atomic layer deposited high-k Hf_xAl_(1-x)O as an alternative gate dielectric for 4H-SiC MIS based transistors显示文摘HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors. | SONG QingWen ZHANG YuMing ZHANG YiMen TANG XiaoYan JIA RenXu | 2012 | Science China(Technological Sciences)2012，55，3： | 1 |
| 3 | Transcription factor EB(TFEB)-mediated autophagy protects bovine mammary epithelial cells against H_(2)O_(2)-induced oxidative damage in vitro显示文摘Background:Bovine mammary epithelial cells after calving undergo serious metabolic challenges and oxidative stress both of which could compromise autophagy.Transcription factor EB(TFEB)-mediated autophagy is an important cytoprotective mechanism against oxidative stress.However,effects of TFEB-mediated autophagy on the oxidative stress of bovine mammary epithelial cells remain unknown.Therefore,the main aim of the study was to investigate the role of TFEB-mediated autophagy in bovine mammary epithelial cells experiencing oxidative stress.Results:H_(2)O_(2) challenge of the bovine mammary epithelial cell MAC-T increased protein abundance of LC3-II,increased number of autophagosomes and autolysosomes while decreased protein abundance of p62.Inhibition of autophagy via bafilomycin A1 aggravated H_(2)O_(2)-induced reactive oxygen species(ROS)accumulation and apoptosis in MAC-T cells.Furthermore,H_(2)O_(2) treatment triggered the translocation of TFEB into the nucleus.Knockdown of TFEB by siRNA reversed the effect of H_(2)O_(2) on protein abundance of LC3-II and p62 as well as the number of autophagosomes and autolysosomes.Overexpression of TFEB activated autophagy and attenuated H_(2)O_(2)-induced ROS accumulation.Furthermore,TFEB overexpression attenuated H_(2)O_(2)-induced apoptosis by downregulating the caspase apoptotic pathway.Conclusions:Our results indicate that activation of TFEB mediated autophagy alleviates H_(2)O_(2)-induced oxidative damage by reducing ROS accumulation and inhibiting caspase-dependent apoptosis. | Xudong Sun Renxu Chang Yan Tang Shengbin Luo Chunhui Jiang Hongdou Jia Qiushi Xu Zhihao Dong Yusheng Liang Juan J.Loor Chuang Xu | 2021 | Journal of Animal Science and Biotechnology2021，12，3： | 1 |
| 4 | Inhibiting nuclear factor erythroid 2 related factor 2-mediated autophagy in bovine mammary epithelial cells induces oxidative stress in response to exogenous fatty acids显示文摘Background:In early lactation,bovine mammary epithelial cells undergo serious metabolic challenges and oxidative stress both of which could be alleviated by activation of autophagy.Nuclear factor erythroid 2 related factor 2(NFE2L2),a master regulator of cellular redox homeostasis,plays an important role in the regulation of autophagy and oxidative stress.Thus,the objective of this study was to investigate the role of NFE2L2-mediated autophagy on oxidative stress of bovine mammary epithelial cells in response to exogenous free fatty acids(FFA).Results:Exogenous FFA induced linear and quadratic decreases in activities of glutathione peroxidase(GSH-Px),catalase(CAT),and superoxide dismutase(SOD),and increases in the contents of reactive oxygen species(ROS)and malondialdehyde(MDA).Protein abundance of LC3-phosphatidylethanolamine conjugate(LC3-Ⅱ)and the number of autophagosomes and autolysosomes decreased in a dose-dependent manner,while protein abundance of p62 increased in cells challenged with FFA.Activation of autophagy via pre-treatment with Rap attenuated the FFAinduced ROS accumulation.Importantly,FFA inhibited protein abundance of NFE2L2 and the translocation of NFE2L2 into the nucleus.Knockdown of NFE2L2 by siRNA decreased protein abundance of LC3-Ⅱ,while it increased protein abundance of p62.Furthermore,sulforaphane(SFN)pre-treatment attenuated the FFA-induced oxidative stress by activating NFE2L2-mediated autophagy.Conclusions:The data suggested that NFE2L2-mediated autophagy is an important antioxidant mechanism in bovine mammary epithelial cells experiencing increased FFA loads. | Renxu Chang Xudong Sun Hongdou Jia Qiushi Xu Zhihao Dong Yan Tang Shengbin Luo Qianming Jiang Juan J.Loor Chuang Xu | 2022 | Journal of Animal Science and Biotechnology2022，13，5： | 0 |
| 5 | Performance investigations of novel dual-material gate(DMG) MOSFET with dielectric pockets(DP)显示文摘Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed. | LUAN SuZhen LIU HongXia JIA RenXu | 2009 | Science China(Technological Sciences)2009，52，8： | 0 |
| 6 | Simulating the obstacle avoidance behavior day and night based on the visible-infrared MoS_(2)/Ge heterojunction field-effect phototransistor显示文摘The contradiction between the high number of visually handicapped people and the scarcity of guide dogs has stimulated the demand for electronic guide dogs(EGDs).Here,we demonstrate an EGD by leveraging piezoresistors on a MoS_(2)/Ge heterostructure for simultaneous pressure-sensing and optical-sensing functions.The device has excellent gating capability and exhibits large positive and negative photoresponses under visible(532 nm,182 A/W)and infrared(1550 nm,37 A/W)illumination.These characteristics allow the device to efficiently classify different obstacles at all times of day using pressure and light signals.The device reaches nearly 100%accuracy after 48 training sessions when used to classify frequent scenes.The device adopts passive and active detection modes during the day and night,respectively,which improves the battery life of the EGD.This work provides a significant reference for the future design of EGDs,which may help a greater number of visually impaired people by reducing the cost of such devices. | Zhao Han Bo Wang Jie You Qiancui Zhang Yichi Zhang Tian Miao Ningning Zhang Dongdong Lin Zuimin Jiang Renxu Jia Jincheng Zhang Hui Guo Huiyong Hu Liming Wang | 2023 | Nano Research2023，16，8： | 0 |
| 7 | Two-dimensional subthreshold current model for dualmaterial gate SOI nMOSFETs with single halo显示文摘A two-dimensional(2D)model for the subthreshold current in the dual-material gate(DMG)siliconon-insulator(SOI)MOSFET with a single halo is presented.The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation.Together with the conventional driftdiffusion theory,this results in the development of a subthreshold current model for the novel structure.Model verification is carried out using the 2D device simulator ISE.Excellent agreement is obtained between the calculations and the simulated results of the model. | Suzhen LUAN Hongxia LIU Renxu JIA Jin WANG | 2009 | Frontiers of Electrical and Electronic Engineering in China2009，4，1： | 0 |
| 8 | Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition显示文摘3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal,hot-wall low pressure chemical vapor deposition system.The crystal quality,surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction,atomic force microcopy and Fourier transform infrared spectroscopy,respectively.Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases. | CHEN Da ZHANG YuMing ZHANG YiMen WANG YueHu JIA RenXu | 2010 | Chinese Science Bulletin2010，55，27： | 0 |
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