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| 1 | Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil显示文摘A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. | Xiaozhi Xu Zhihong Zhang Jichen Dong Ding Yi Jingjing Niu Muhong Wu Li Lin Rongkang Yin Mingqiang Li Jingyuan Zhou Shaoxin Wang Junliang Sun Xiaojie Duan Peng Gao Ying Jiang Xiaosong Wu Hailin Peng Rodney S. Ruoff Zhongfan Liu Dapeng Yu Enge Wang Feng Ding Kaihui Liu | 2017 | Science Bulletin2017，62，15： | 40 |
| 2 | Carbon nanotube transistors with graphene oxide films as gate dielectrics显示文摘Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics. | FU WangYang,LIU Lei,WANG WenLong,WU MuHong,XU Zhi,BAI XueDong & WANG EnGe Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，5： | 4 |
| 3 | Abnormal anti-oxidation behavior of hexagonal boron nitride grown on copper显示文摘Atomic-layered hexagonal boron nitride(hBN)is expected to be the best two-dimensional(2D)anti-oxidation layer on metals for its incomparable impermeability,insulativity,and stability,as well as the progressive bottom-up growth techniques to ensure fast coating on metal surface in large area.However,its real anti-oxidation ability in practice is found to be unsatisfactory and nonuniform,and the main obstacle to achieving ideal anti-oxidation performance lies in unclear anti-oxidation behavior at special interface between 2D hBN and three-dimensional(3D)metals.Herein,system of monolayer hBN grown on copper(Cu)foils with various lattice orientations was grown to investigate the anti-oxidation behavior of different interlayer configurations.By using structural characterizations together with analysis of topography,we surprisingly found that stronger interlayer coupling led to worse anti-oxidation performance owing to fast diffusion of O2 through higher hBN corrugations generated at the commensurate hBN/Cu(111)configuration.In view of this,we developed the approach of cyclic reannealing that can effectively flatten corrugations and steps,and therefore improve the anti-oxidation performance to a great extent.This work provides a more indepth understanding of anti-oxidation behavior of 2D materials grown on 3D metals,and a practical method to pave the way for its large-scale applications in future. | Li Wang Jiajie Qi Shuai Zhang Mingchao Ding Wei Wei Jinhuan Wang Zhihong Zhang Ruixi Qiao Zhibin Zhang Zehui Li Kehai Liu Ying Fu Hao Hong Can Liu Muhong Wu Wenlong Wang Jun He Yi Cui Qunyang Li Xuedong Bai Kaihui Liu | 2022 | Nano Research2022，15，8： | 0 |
| 4 | Giant pattern evolution in third-harmonic generation of strained monolayer WS2 at two-photon excitonic resonance显示文摘Strong geometrical confinement and reduced dielectric screening of two-dimensional(2D)materials leads to strong Coulomb interaction and eventually give rise to extraordinary excitonic effects,which dominates the optical and optoelectronic properties.For nonlinear 2D photonic or optoelectronic applications,excitonic effects have been proved effective to tune the light-matter interaction strength.However,the modulation of excitonic effects on the other aspect of nonlinear response,i.e.,polarization dependence,has not been fully explored yet.Here we report the first systemic study on the modulation of excitonic effects on the polarization dependence of second and third harmonic generation(SHG and THG)in strained monolayer WS2 by varying excitation wavelength.We demonstrated that polarization-dependent THG patterns undergo a giant evolution near two-photon excitonic resonance,where the long-axis of the parallel component(originally parallel to the strain direction)has a 90°flip when the excitation wavelength increases.In striking contrast,no apparent variation of polarization-dependent SHG patterns occurs at either two-or three-photon excitonic resonance conditions.Our results open a new avenue to modulate the anisotropic nonlinear optical response of 2D materials through effective control of excitonic resonance states,and thus open opportunity for new designs and applications in nonlinear optoelectronic 2D devices. | Jing Liang He Ma Jinhuan Wang Xu Zhou Wentao Yu Chaojie Ma Muhong Wu Peng Gao Kaihui Liu Dapeng Yu | 2020 | Nano Research2020，13，12： | 0 |
| 5 | Towards growth of pure AB-stacked bilayer graphene single crystals显示文摘Given its intriguing band structure and unique tunable bandgap,AB-stacked bilayer graphene has great potentials in the applications of high-end electronics,optoelectronics and semiconductors.The epitaxial growth of AB-stacked single-crystal bilayer graphene films requires a strict AB-stacked lattice,identical orientations and seamless stitching of bilayer graphene islands.However,the particles inevitably present on the metal surface that produced during high temperature growth would induce random orientations,twisted stacking islands,and uncontrollable multilayers,which is a great challenge to overcome.Here,we propose a heat-resisting-box assisted strategy to produce nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni(111)foils.With our technique,the particles on the Cu/Ni(111)surface are effectively eliminated,which greatly minimizes the occurrence of randomly twisted islands and uncontrollable multilayers.The as-grown AB-stacked bilayer graphene films show>99%alignment and>99%AB stacking order.Our work provides a promising method towards the growth of pure AB-stacked bilayer graphene single crystals and would accelerate its device applications. | Xiaowen Zhang Tao Zhou Yunlong Ren Zuo Feng Ruixi Qiao Qinghe Wang Bin Wang Jinxia Bai Muhong Wu Zhilie Tang Xu Zhou Kaihui Liu Xiaozhi Xu | 2024 | Nano Research2024，17，5： | 0 |
| 6 | Low-temperature epitaxy of transferable high-quality Pd(111)films on hybrid graphene/Cu(111)substrate显示文摘The continuous pursuit of miniaturization in the electronics and optoelectronics industry demands all device components with smaller size and higher performance,in which thin metal film is one heart material as conductive electrodes.However,conventional metal filmns are typically polycrystalline with random domain orientations and various grain boundaries,which greatly degrade their mechanical,thermal and electrical properties.Hence,it is highly demanded to produce single-crystal metal films with epitaxy in an appealing route.Traditional epitaxy on non-metal single-crystal substrates has difficulty in exfoliating away due to the formation of chemical bonds.Newly developed epitaxy on single-crystal graphene enables the easy exfoliation of epilayers but the annealing temperature must be high(typical 500-1,000℃ and out of the tolerant range of integrated circuit technology)due to the relative weak intertacial interactions.Here we demonstrate the facile production of 6-inch transferable high-quality Pd(111)filims on single-crystal hybrid graphene/Cu(111)substrate with CMOS-compatible annealing temperature of 150℃ only.The interfacial interaction between Pd and hybrid graphene/Cu(111)substrate is strong enough to enable the low-temperature epitaxy of Pd(111)films and weak enough to facilitate the easy film release from substrate.The obtained Pd(111)films possess superior properties to polyrystalline ones with-0.25 eV higher work function and almost half sheet resistance.This technique is proved to be applicable to other metals,such as Au and Ag.As the single-crystal graphene/Cu(111)substrates are obtained from industrial Cu foils and accessible in meter scale,our work will promote the massive applications of large-area high-quality metal fims in the development of next-generation electronic and optoelectronic devices. | Zhihong Zhang Xiaozhi Xu Ruixi Qiao Junjiang Liu Yuxia Feng Zhibin Zhang Peizhao Song Muhong Wu Lan Zhu Xuelin Yang Peng Gao Lei Liu Jie Xiong Enge Wang Kaihui Liu | 2019 | Nano Research2019，12，11： | 0 |
| 7 | Towards intrinsically pure graphene grown on copper显示文摘The state-of-the-art semiconductor industry is built on the successful production of silicon ingot with extreme purity as high as 99.999999999%,or the so-called'eleven nines'.The coming high-end applications of graphene in electronics and optoelectronics will inevitably need defect-free pure graphene as well.Due to its two-dimensional(2D)characteristics,graphene restricts all the defects on its surface and has the opportunity to eliminate all kinds of defects,i.e.,line defects at grain boundaries and point or dot defects in grains,and produce intrinsically pure graphene.In the past decade,epitaxy growth has been adopted to grow graphene by seamlessly stitching of aligned grains and the line defects at grain boundaries were eliminated finally.However,as for the equally common dot and point defects in graphene grain,there are rare ways to detect or reduce them with high throughput and efficiency.Here,we report a methodology to realize the production of ultrapure graphene grown on copper by eliminating both the dot and point defects in graphene grains.The dot defects,proved to be caused by the silica particles shedding from quartz tube during the high-temperature growth,were excluded by a designed heat-resisting box to prevent the deposition of particles on the copper surface.The point defects were optically visualized by a mild-oxidation-assisted method and further reduced by etching-regrowth process to an ultralow level of less than 1/1,000 μm^(2).Our work points out an avenue for the production of intrinsically pure graphene and thus lays the foundation for the large-scale graphene applications at the integrated-circuit level. | Xiaozhi Xu Ruixi Qiao Zhihua Liang Zhihong Zhang Ran Wang Fankai Zeng Guoliang Cui Xiaowen Zhang Dingxin Zou Yi Guo Can Liu Ying Fu Xu Zhou Muhong Wu Zhujun Wang Yue Zhao Enke Wang Zhilie Tang Dapeng Yu Kaihui Liu | 2022 | Nano Research2022，15，2： | 0 |
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