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| 1 | Principle of designing slope compensation in PFC Boost converter显示文摘Due to wide input fluctuation with line frequency of 50 Hz, power-factor-correction (PFC) Boost converters tend to exhibit fast-scale instability over time domain. The traditional remedy is to impose slope compensation so as to weaken or eliminate this instability. A theoretical principle on the implementation of slope compensation signal is still lacking. Empirical design will induce over compensation frequently, resulting in a large decrease of power factor. In order to tackle this issue, by constructing the discrete-time iterative map of the PFC Boost converter from the viewpoint of bifurcation control theory of nonlinear systems, consequently, the criterion of critical stability for the PFC circuit can be established. Based on this stability criterion, appropriate design of slope compensation can be achieved. Our work indicates that 3 main circuit parameters (i.e. switching cycle, output reference voltage and inductor) determine the effective amplitude design of the slope compensation signal. The results, validated by a large quantity of analytical and numerical studies, show that appropriate slope compensation can be effective in weakening (or controlling) fast-scale bifurcation while maintaining a rather high input power factor. | ZHOU YuFei HUANG JiaCheng WANG ShiBing JIANG Wei CHEN JunNing | 2009 | Science in China(Series F)2009，52，11： | 6 |
| 2 | Improving the electrical performance of resistive switching memory using doping technology显示文摘In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM. | WANG Yan LIU Oi LU HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming | 2012 | Chinese Science Bulletin2012，57，11： | 6 |
| 3 | Toward emerging gallium oxide semiconductors:A roadmap显示文摘Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth processes,material characteristics,and applications of Ga_(2)O_(3).Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors,large-size and high-quality��-Ga_(2)O_(3) single crystals can be efficiently grown with a low cost,making them highly competitive.Thanks to the availability of high-quality single crystals,epi-taxial films,and rich material systems,high-performance semiconductor devices based on Ga_(2)O_(3) go through a booming development in recent years.The defects and interfaces of Ga_(2)O_(3) are comprehensively analyzed owing to their significant influence on practical applications.In this study,the two most common applications of Ga_(2)O_(3) materials are introduced.The high breakdown electric field,high working temperature,and excellent Baliga’s figure-of-merit of Ga_(2)O_(3) represent an inspiring prospect for power electronic devices.In addition,the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress.Finally,the summary,challenges,and prospects of the Ga_(2)O_(3) materials and devices are presented and discussed. | Yuan Yuan Weibing Hao Wenxiang Mu Zhengpeng Wang Xuanhu Chen Qi Liu Guangwei Xu Chenlu Wang Hong Zhou Yanni Zou Xiaolong Zhao Zhitai Jia Jiandong Ye Jincheng Zhang Shibing Long Xutang Tao Rong Zhang Yue Hao | 2021 | Fundamental Research2021，1，6： | 5 |
| 4 | A 10×10 deep ultraviolet light-emitting micro-LED array显示文摘In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in diameter.Strikingly,the array demonstrates a significant enhancement of total light output power by nearly 52%at the injection current of 100 mA,in comparison to a conventional large LED chip whose emitting area is the same as the array.A much higher(~22%)peak external quantum efficiency,as well as a smaller efficiency droop forμ-LED array,was also achieved.The numerical calculation reveals that the performance boost can be attributed to the higher light extraction efficiency at the edge of eachμ-LED.Additionally,the far-field pattern measurement shows that theμ-LED array possesses a better forward directionality of emission.These findings shed light on the enhancement of the DUV LEDs performance and provide new insights in controlling the light behavior of theμ-LEDs. | Huabin Yu Muhammad Hunain Memon Hongfeng Jia Haochen Zhang Meng Tian Shi Fang Danhao Wang Yang Kang Shudan Xiao Shibing Long Haiding Sun | 2022 | Journal of Semiconductors2022，43，6： | 3 |
| 5 | Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement显示文摘The combination of capacitance-and current-voltage(CV/IV) measurements is used to analyze trap generation in silicon-nanocrystal memory devices during Fowler-Nordheim(FN) programming/erasing cycling.CV and IV curves are measured after certain P/E cycles.The flatband voltage(Vfb) and the threshold voltage(Vth) are extracted from CV curves by solving one-dimensional Schr?dinger and Poisson equations.Both hole and electron trappings are observed in the tunneling SiO2.They show up in the accumulation and the inversion,respectively.By fitting FN tunneling current,the area densities of cycling-induced electron traps in the blocking oxide and in the tunneling oxide are finally determined. | YANG XiaoNan ZHANG ManHong WANG Yong HUO ZongLiang LONG ShiBing ZHANG Bo LIU Jing LIU Ming | 2012 | Science China(Technological Sciences)2012，55，3： | 3 |
| 6 | Recent progress and strategies toward high performance zinc-organic batteries显示文摘Energy sustainable development has stimulated the pursuit of an eco-friendly energy storage system.Carbon peak and neutrality targets oriented energy storage development will guide the way of further studies on batteries system.However,conventional batteries system(lead-acid batteries,lithium-ion batteries)based on ungreen transition metal oxide,flammable electrolytes or hazardous metals cannot keep pace with the development of society sooner or later.Thus,vast explorations on the advanced rechargeable battery systems were conducted.Compared with other battery systems,zinc ion battery systems with inherent safety,low cost were widely investigated.Especially,the zinc organic batteries based on the eco-efficiency organic cathodes were promising alternative advanced batteries for future energy storage systems.Therefore,various organics and different electrochemistry mechanisms were explored in the zinc batteries system.Herein,a timely review on elaborate analysis about functional groups,fundamentals,progress accompanied by the discussion on the four core issues:voltage,capacity,rate performance,cycle life was presented.Specifically,aiming at these issues,three levels of solution strategies:materials design concepts,morphology structure optimization and electrolyte environment were summarized and proposed for the development and innovation of zinc organic batteries. | Shibing Zheng Qiaoran Wang Yunpeng Hou Lin Li Zhanliang Tao | 2021 | Journal of Energy Chemistry2021，30，12： | 2 |
| 7 | Approaches for improving the performance of filament-type resistive switching memory显示文摘Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced. | LIAN WenTai LONG ShiBing LU HangBing LIU Qi LI YingTao ZHANG Sen WANG Yan HUO ZongLiang DAI YueHua CHEN JunNing LIU Ming | 2011 | Chinese Science Bulletin2011，56，4： | 2 |
| 8 | Hydrothermal synthesis of Fe3O4 nanoparticles and its application in lithium ion battery显示文摘 | Ni Shibing Wang Xinghui Zhou Guo | 2009 | Materials Letters2009，63，30： | 1 |
| 9 | Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions 显示文摘 | Liu Qi Long Shibing Wang Wei | 2009 | IEEE Electron Device Let- ters2009，30，12： | 1 |
| 10 | Synthesis of Zn3 (OH)2V207 · nil2O hierarchical nanostructures and their photoluminescence properties 显示文摘 | Ni Shibing Zhou Guo Wang Xinghui | 2010 | Mater Chem Phys2010，120，： | 1 |
| 11 | Influencing Factors of Reheating Shrinkage Rate of Glass Substrate on LTPS Process显示文摘Different heating treatments with the variation of heating rates,holding temperatures and holding time were used to simulate the LTPS procedure.The experimental results show that the reheating shrinkage rates of glass substrates are rarely changed with increasing the heating rate,but strongly enhanced by raising the holding temperature and time,which shows that the reheating shrinkage of glass is closely related to heat treatment and structural relaxation.The production process of glass is critical to the reheating shrinkage of glass. | 王伟来 田英良 WANG Wei LIU Yaru SUN Shibing LüFeng CHEN Xinxin | 2020 | Journal of Wuhan University of Technology(Materials Science)2020，35，4： | 1 |
| 12 | The effect of rotational extrusion on the structure and properties of HDPE Pipes显示文摘 | Yue Guo Qi Wang Shibing Bai | 2010 | Polymer Plas- tics Technology and Engineering2010，49，9： | 1 |
| 13 | Low-Temperature Aging Provides 22% E cient Bromine-Free and Passivation Layer-Free Planar Perovskite Solar Cells显示文摘Previous reports of formamidinium/methylamine(FAMA)-mixed halide perovskite solar cells have focused mainly on controlling the morphology of the perovskite film and its interface—for example,through the inclusion of bromine and surface passivation.In this paper,we describe a new processing pathway for the growth of a high-quality bromine-free FAMAPbI3 halide perovskites via the control of intermediate phase.Through low-temperature aging growth(LTAG)of a freshly deposited perovskite film,α-phase perovskites can be seeded in the intermediate phase and,at the same time,prevent beta-phase perovskite to nucleate.After postannealing,large grain-size perovskites with significantly reduced PbI2 presence on the surface can be obtained,thereby eliminating the need of additional surface passivation step.Our pristine LTAG-treated solar cells could provide PCEs of greater than 22%without elaborate use of bromine or an additional passivation layer.More importantly,when using this LTAG process,the growth of the pure alpha-phase FAMAPbI3 was highly reproducible. | Xin Wang Luyao Wang Tong Shan Shibing Leng Hongliang Zhong Qinye Bao Zheng-Hong Lu Lin-Long Deng Chun-Chao Chen | 2020 | Nano-Micro Letters2020，12，7： | 1 |
| 14 | Therapeutic effect of Jianpi Liqi Fang(健脾理气方)combined with transcatheter arterial chemoembolization in patients with hepatocellular carcinoma and spleen deficiency syndrome显示文摘OBJECTIVE:To investigate the therapeutic effect of the Jianpi Liqi Fang(健脾理气方,JPLQF)combined with transcatheter arterial chemoembolization(TACE)in patients with hepatocellular carcinoma(HCC)and spleen deficiency syndrome(SDS)and identify a potential indicator of efficacy.METHODS:Ninety-nine patients with HCC who were diagnosed with SDS,non-spleen deficiency syndrome(NSDS),or no syndrome(NS)were treated with JPLQF combined with TACE for three periods.Therapeutic efficacy was compared among the groups.Plasma proteins were screened using label-free discovery analysis and verified via enzyme-linked immunosorbent assay(ELISA).Furthermore,receiver operating characteristic(ROC)curves were analyzed to evaluate therapeutic indicators.RESULTS:After treatment,the Karnofsky Performance Status was significantly improved in the SDS group and significantly better than that in the NS group.The Traditional Chinese Medicine(TCM)syndrome scores were lower in the SDS group after treatment and lower than those in the NSDS group.However,alanine aminotransferase,carbohydrate antigen 19-9,alpha-fetoprotein,and carcinoembryonic antigen levels and white blood cell and platelet counts did not differ among the groups.Serum aspartate aminotransferase levels in the SDS group were significantly lower after treatment than before treatment,and total bilirubin levels were significantly lower in the SDS group than in the NSDS group.Label-free analysis identified 24 differentially expressed proteins(DEPs)between the SDS and NS groups,including 17 and 7 upregulated and downregulated proteins,respectively.Fibulin-5(FBLN5)displayed the largest difference in expression between the groups.ELISA confirmed that FBLN5 levels were significantly lower in the NSDS and NS groups than in the SDS group.Following treatment with JPLQF and TACE,FBLN5 expression was upregulated only in the SDS group.Furthermore,ROC curve analysis indicated that FBLN5 may serve as a potential indicator of the efficacy of JPLQF combined with TACE in patients with HCC and SDS.CONCLUSION:JPLQF combined with TACE improved quality of life,clinical TCM symptoms,and liver function in patients with HCC and SDS.FBLN5 expression was significantly altered by treatment with JPLQF and TACE in patients with HCC and SDS. | CHEN Xiaole WANG Peng MENG Zhiqiang YANG Mengdie ZHOU Wenjun SU Shibing CHEN Jian | 2021 | Journal of Traditional Chinese Medicine2021，41，1： | 1 |
| 15 | Investigation of LRS dependence on the retention of HRS in CBRAM显示文摘 | Xiaoxin Xu Hangbing Lv Hongtao Liu Qing Luo Tiancheng Gong Ming Wang Guoming Wang Meiyun Zhang Yang Li Qi Liu Shibing Long Ming Liu | 2015 | Nanoscale Research Letters2015，，： | 1 |
| 16 | An overview of the switching parameter variation of RRAM显示文摘Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed. | Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu | 2014 | Chinese Science Bulletin2014，59，36： | 1 |
| 17 | Poly(vinyl alcohol)/melamine phosphate composites prepared through thermal processing: thermal stability and flame retardancy显示文摘 | Dan Guo Qi Wang Shibing Bai | 2012 | Polym Adv Technol2012，，3： | 1 |
| 18 | A microcalorimct- ric study of β - cyclodextrin with 3 - alkoxyl - 2 - hydroxypropyl trimethyl ammonium bromides in aqueous solutions 显示文摘 | SUN DEZUI WANG SHIBING WEI XILIAN | 2005 | J Chem Therm2005，37，： | 1 |
| 19 | Design of MCI single and symmetrical on-chip spiral inductors显示文摘In this paper,the MCI(multipath crossover interconnection)technique for octagon single and symmetrical spiral inductors has been presented to improve the quality factor.The metal wires of the single and symmetrical inductors formed by the top metal are divided into multiple segments according to the depth of the skin effects.The outermost path of the metal is crossover-interconnected to the innermost path by the underlayer metal and via The crossover technique makes the lengths of the total current paths between two ports approximately equal to each other.Therefore,the induced magnetic flux and resistance of each path can be balanced and the Q-factor of spiral inductors can be enhanced.The proposed MCI technique has been validated by the electromagnetic simulation with the 130-nm 1P6M SiGe BiCMOS process.For the devices with occupying areas of 240 240 μm^2,results of electromagnetic simulation show that about 24%improvement in the Q-peak(3.3 GHz)of the MCI single inductor as compared to conventional single inductors(3.1 GHz),and about 88.1%improvement in the Q-peak(3.2 GHz)of the MCI symmetrical inductor as compared to conventional symmetrical inductors(1.8 GHz). | Bo Han Shibing Wang Xiaofeng Shi | 2017 | Journal of Semiconductors2017，38，6： | 1 |
| 20 | Progress in rectifying-based RRAM passive crossbar array显示文摘Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed. | ZHANG KangWei LONG ShiBing LIU Qi LUE HangBing LI YingTao WANG Yan LIAN WenTai WANG Ming ZHANG Sen LIU Ming | 2011 | Science China(Technological Sciences)2011，54，4： | 1 |
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