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14篇 您的检索式:作者名="Songyin"
    题名 作者 年代 出处 被引量
1Robust fault diagnosis with disturbance rejection and attenuation for systems with multiple disturbances显示文摘The fault diagnosis problem is investigated for a class of nonlinear neutral systems with multiple disturbances.Time-varying faults are considered and multiple disturbances are supposed to include the unknown disturbance modeled by an exo-system and norm bounded uncertain disturbance.A nonlinear disturbance observer is designed to estimate the modeled disturbance.Then,the fault diagnosis observer is constructed by integrating disturbance observer with disturbance attenuation and rejection performances.The augmented Lyapunov functional approach,which involves the tuning parameter and slack variable,is applied to make the solution of inequality more flexible.Finally,applications for a two-link robotic manipulator system are given to show the efficiency of the proposed approach.Songyin Cao Lei Guo Xinyu Wen 2011Journal of Systems Engineering and Electronics2011,22,1:2
2A Real-time Video Monito- ring System of Mobile Terminals Based on Android Platform: A Case Study of Electric Power Systems显示文摘Songehun Gong Songyin Fu Zheng Chen 2013Research Journal of Applied Sci- ences Engineering and Technology2013,5,7:1
3Targeted delivery of PLKI-siRNA by SeFv suppresses Her2+ breast cancer growth and metastasis 显示文摘YAO Yandan SUN Tianmeng HUANG Songyin 2012Sci Transl Med2012,4,130:1
4A novel principle to measure the cross conductance显示文摘He Chaolai Lu Zuliang Liu Songyin 1995Modern Measurement and Test1995,,1:1
5A novel catalyst for CO oxidation at low temperature显示文摘Guoli Dong Jianguo Wang Yinben Gao Songyin Chen 1999Catalysis Letters1999,,1:1
6Application and prospect of semiconductor biosensors in detection of viral zoonoses显示文摘The rapid spread of viral zoonoses can cause severe consequences,including huge economic loss,public health problems or even global crisis of society.Clinical detection technology plays a very important role in the prevention and control of such zoonoses.The rapid and accurate detection of the pathogens of the diseases can directly lead to the early report and early successful control of the diseases.With the advantages of being easy to use,fast,portable,multiplexing and cost-effective,semiconductor biosensors are kinds of detection devices that play an important role in preventing epidemics,and thus have become one of the research hotspots.Here,we summarized the advances of semiconductor biosensors in viral zoonoses detection.By discussing the major principles and applications of each method for different pathogens,this review proposed the directions of designing semiconductor biosensors for clinical application and put forward perspectives in diagnostic of viral zoonoses.Jiahao Zheng Chunyan Feng Songyin Qiu Ke Xu Caixia Wang Xiaofei Liu Jizhou Lv Haoyang Yu Shaoqiang Wu 2023Journal of Semiconductors2023,44,2:0
7A brief review of novel nucleic acid test biosensors and their application prospects for salmonids viral diseases detection显示文摘Viral diseases represent one of the major threats for salmonids aquaculture.Early detection and identification of viral pathogens is the main prerequisite prior to undertaking effective prevention and control measures.Rapid,sensitive,efficient and portable detection method is highly essential for fish viral diseases detection.Biosensor strategies are highly prevalent and fulfill the expanding demands of on-site detection with fast response,cost-effectiveness,high sensitivity,and selectivity.With the development of material science,the nucleic acid biosensors fabricated by semiconductor have shown great potential in rapid and early detection or screening for diseases at salmonids fisheries.This paper reviews the current detection development of salmonids viral diseases.The present limitations and challenges of salmonids virus diseases surveillance and early detection are presented.Novel nucleic acid semiconductor biosensors are briefly reviewed.The perspective and potential application of biosensors in the on-site detection of salmonids diseases are discussed.Xiaofei Liu Songyin Qiu Haiping Fang Lin Mei Hongli Jing Chunyan Feng Shaoqiang Wu Xiangmei Lin 2023Journal of Semiconductors2023,44,2:0
8Raman Analysis of 30 MeV C_(60) Irradiated N-doped Carbon显示文摘In the present work, we used the technique of “low energy ion implantation + swift; heavy ion irradiation ”to investigate huge electronic excitations induced modification in N-doped graphite-like-carbon.WangZhiguang A.Dunlop ZhaoZhiming SongYin JinYunfan ZhangChonghong LiuJie SunYoumei 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
9Evidence of New Structure Formation in C-doped SiO_2 after 4.57 MeV/u Pb Ion Irradiation显示文摘Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitationsWangZhiguang ZhaoZhiming SongYin JinYunfan ZhangChonghong LiuJie SunYoumei A.Benyagoub M.Toulemonde F.Levesque H.Takahashi T.Shibayama N.Sakagushi 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
10RBS Analysis of Damage Evolution in Helium-implanted 4H-SiC显示文摘The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation.ZhangChonghong SongYin DuanJinglai SunYoumei MaHongji NieRui ShenDingyu 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
11Defect Accumulation and Its Effect on Photoluminescence in GaN Bombarded with Low-energy Heavy Ions显示文摘Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated withZhangChonghong SongYin DuanJinglai SunYoumei YaoCunfeng MaHongji NieRui T.Shibayama HongChen 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
12Defect Structures in 4H-SiC Irradiated with Highly-energetic ^(20)Ne^(4+) and ^(129)Xe^(26+) Ions显示文摘The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension ofZhangChonghong SunYoumei T.Shibayama LiuJie WangZhiguang SongYin DuanJinglai ZhaoZhiming YaoCunfeng WangYing HouMingdong JinYunfan 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
13FTIR Study of New Chemical Bond Formation in N-doped Carbon under Swift Pb ion Irradiation显示文摘Since Liu and Cohen predicted that the bulk modulus of carbon nitride films with the structure of β-C3N4 are comparable or even surpass those of diamond, intensive experimental efforts have been done to synthesize this new material. Various kinds of synthesized methods have been applied to fabricate carbon nitride films, whereas samples with sufficient amounts of crystallized C3N4 structure or with mechanical properties comparable to the predicted values have not been reported. From the basic of ion-solid interaction, Wang, et al. have proposed a novel method, 'low energy ion implantation + swift heavy ion irradiation', for synthesizing compound in atom mixed materials. This method has been used in the present work.ZhaoZhiming SongYin WangZhiguang JinYunfan A.Benyagoub M.Toulemonde 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
14FTIR Study of C-doped SiO_2 Films Irradiated by 4.57 MeV/u Pb Ions显示文摘The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。ZhaoZhiming SongYin WangZhiguang JinYunfan A.Benyagoub M.Toulemonde F.Levesque 2003近代物理研究所和兰州重离子加速器实验室年报:英文版2003,,1:0
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