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| 1 | Genotypic variation in phosphorus acquisition from sparingly soluble P sources is related to root morphology and root exudates in Brassica napus显示文摘Genotypic variations in the adaptive response to low-phosphorus(P) stress and P-uptake efficiency have been widely reported in many crops.We conducted a pot experiment to evaluate the P-acquisition ability of two rapeseed(Brassica napus) genotypes supplied with two sparingly soluble sources of P,Al-P and Fe-P.Then,the root morphology,proton concentrations,and carboxylate content were investigated in a solution experiment to examine the genotypic difference in P-acquisition efficiency.Both genotypes produced greater biomass and accumulated more P when supplied with Al-P than when supplied with Fe-P.The P-efficient genotype 102 showed a significantly greater ability to deplete sparingly soluble P from the rhizosphere soil because of its greater biomass and higher P uptake compared with those of the P-inefficient genotype 105.In the solution experiment,the P-efficient genotype under low-P conditions developed dominant root morphological traits,and it showed more intensive rhizosphere acidification because of greater H+ efflux,higher H+-ATPase activity,and greater exudation of carboxylates than the P-inefficient genotype.Thus,a combination of morphological and physiological mechanisms contributed to the genotypic variation in the utilization of different sparingly soluble P sources in B.napus. | ZHANG HaiWei HUANG Yu YE XiangSheng XU FangSen | 2011 | Science China(Life Sciences)2011，54，12： | 6 |
| 2 | A joint call for actions to advance taxonomy in China显示文摘Taxonomy plays an important role in understanding the origin, evolution, and ecological functionality of biodiversity. There are large number of unknown species yet to be described by taxonomists, which together with their ecosystem services cannot be effectively protected prior to description. Despite this, taxonomy has been increasingly underrated insufficient funds and permanent positions to retain young talents. Further, the impact factordriven evaluation systems in China exacerbate this downward trend, so alternative evaluation metrics are urgently necessary. When the current generation of outstanding taxonomists retires,there will be too few remaining taxonomists left to train the next generation. In light of these challenges, all co-authors worked together on this paper to analyze the current situation of taxonomy and put out a joint call for immediate actions to advance taxonomy in China. | Chaodong Zhu Arong Luo Ming Bai Michael COrr Zhonge Hou Siqin Ge Jun Chen Yibo Hu Xuming Zhou Gexia Qiao Hongzhi Kong Limin Lu Xiaohua Jin Lei Cai Xinli Wei Ruilin Zhao Wei Miao Qingfeng Wang Zhongli Sha Qiang Lin Meng Qu Jianping Jiang Jiatang Li Jing Che Xuelong Jiang Xiaoyong Chen Lianming Gao Zongxin Ren Chunlei Xiang Shixiao Luo Donghui Wu Dong Liu Yanqiong Peng Tao Su Chenyang Cai Tianqi Zhu Wanzhi Cai Xingyue Liu Hu Li Huaijun Xue Zhen Ye Xuexin Chen Pu Tang Shujun Wei Hong Pang Qiang Xie Feng Zhang Feng Zhang Xianjin Peng Aibing Zhang Taiping Gao Changfa Zhou Chen Shao Libin Ma Zhaoming Wei Yunxia Luan Ziwei Yin Wu Dai Cong Wei Xiaolei Huang Jingxian Liu Xiangsheng Chen Tianci Yi Zhisheng Zhang Zhulidezi Aishan Qin Li Hongying Hu | 2022 | Zoological Systematics2022，47，3： | 1 |
| 3 | Genotypic differences in phosphorus acquisition and the rhizosphere properties of Brassica napus in response to low phosphorus stress显示文摘 | Haiwei Zhang Yu Huang Xiangsheng Ye Lei Shi Fangsen Xu | 2009 | Plant and Soil (-)2009，，1： | 1 |
| 4 | Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM显示文摘Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML structures.The high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are observed.Stacked Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and morphologies.In this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)devices.For vertically-stacked dynamic random access memory(VS-DRAM),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness.These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and DRAM devices. | Zhenzhen Kong Hongxiao Lin Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Henry HRadamson Chao Zhao Tianchun Ye Guilei Wang | 2023 | Journal of Semiconductors2023，44，12： | 0 |
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