|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Degradation of light emitting diodes:a proposed methodology显示文摘Due to their long lifetime and high efficacy,light emitting diodes have the potential to revolutionize the illumination industry.However,self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode.In this research,a methodology to investigate the degradation of the LED emitter has been proposed.The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. | Sau Koh Willem Van Driel G.Q.Zhang | 2011 | Journal of Semiconductors2011，32，1： | 3 |
| 2 | Multi-LED package design,fabrication and thermal analysis显示文摘An ultra-thin multi-LED package is designed,manufactured and its thermal performance is characterized. The objective of this study is to develop an efficient thermal modelling approach for this system which can be used for optimization of the thermal-performance of future ultra-thin designs.A high-resolution thermal imaging camera and thermocouples were used to measure the temperature distribution of the multi-LED package and the LED-die temperature for different operating powers.Finally,we compare the thermal measurements with the finite element simulation results.It is concluded that the modelling approach can assist in the thermal optimization of future multi-LED package designs. | R.H.Poelma S.Tarashioon H.W.van Zeijl S.Goldbach J.L.J.Zijl G.Q.Zhang | 2013 | Journal of Semiconductors2013，34，5： | 1 |
| 3 | 查看详情显示文摘 | N.Zhang S.Dong G.Q.Zhang L.Lin Y.Y.Guo J.M.Liu and Z.F.Ren | | 0，，01： | 1 |
| 4 | 查看详情显示文摘 | G.Q.Zhang S.J.Luo S.Dong Y.J.Gao and J.M.Liu | | 0，，： | 1 |
| 5 | STCF conceptual design report (Volume 1): Physics & detector显示文摘The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics community.It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of 0.5×1035 cm–2·s–1 or higher.The STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for exploring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for exotic hadrons and physics beyond the Standard Model.The STCF project in China is under development with an extensive R&D program.This document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector R&D and physics case studies. | M.Achasov X.C.Ai L.P.An R.Aliberti Q.An X.Z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko Z.H.Bu F.M.Cai H.Cai J.J.Cao Q.H.Cao X.Cao Z.Cao Q.Chang K.T.Chao D.Y.Chen H.Chen H.X.Chen J.F.Chen K.Chen L.L.Chen P.Chen S.L.Chen S.M.Chen S.Chen S.P.Chen W.Chen X.Chen X.F.Chen X.R.Chen Y.Chen Y.Q.Chen H.Y.Cheng J.Cheng S.Cheng T.G.Cheng J.P.Dai L.Y.Dai X.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong W.H.Dong V.Druzhinin D.S.Du Y.J.Du Z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang G.Fedotovich C.Q.Feng X.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong B.Gou W.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo Z.H.Guo A.Guskov K.L.Han L.Han M.Han X.Q.Hao J.B.He S.Q.He X.G.He Y.L.He Z.B.He Z.X.Heng B.L.Hou T.J.Hou Y.R.Hou C.Y.Hu H.M.Hu K.Hu R.J.Hu W.H.Hu X.H.Hu Y.C.Hu J.Hua G.S.Huang J.S.Huang M.Huang Q.Y.Huang W.Q.Huang X.T.Huang X.J.Huang Y.B.Huang Y.S.Huang N.Hüsken V.Ivanov Q.P.Ji J.J.Jia S.Jia Z.K.Jia H.B.Jiang J.Jiang S.Z.Jiang J.B.Jiao Z.Jiao H.J.Jing X.L.Kang X.S.Kang B.C.Ke M.Kenzie A.Khoukaz I.Koop E.Kravchenko A.Kuzmin Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li G.Li G.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.H.Li S.Li T.Li W.J.Li X.Li X.H.Li X.Q.Li X.H.Li Y.Li Y.Y.Li Z.J.Li H.Liang J.H.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.Liao C.X.Lin D.X.Lin X.S.Lin B.J.Liu C.W.Liu D.Liu F.Liu G.M.Liu H.B.Liu J.Liu J.J.Liu J.B.Liu K.Liu K.Y.Liu K.Liu L.Liu Q.Liu S.B.Liu T.Liu X.Liu Y.W.Liu Y.Liu Y.L.Liu Z.Q.Liu Z.Y.Liu Z.W.Liu I.Logashenko Y.Long C.G.Lu J.X.Lu N.Lu Q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo X.F.Luo Y.H.Luo H.J.Lyu X.R.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko Z.X.Meng R.Mitchell A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakhlov G.Pakhlova X.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng X.Y.Peng X.J.Peng K.Peters S.Pivovarov E.Pyata B.B.Qi Y.Q.Qi W.B.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin X.S.Qin T.L.Qiu J.Rademacker C.F.Redmer H.Y.Sang M.Saur W.Shan X.Y.Shan L.L.Shang M.Shao L.Shekhtman C.P.Shen J.M.Shen Z.T.Shen H.C.Shi X.D.Shi B.Shwartz A.Sokolov J.J.Song W.M.Song Y.Song Y.X.Song A.Sukharev J.F.Sun L.Sun X.M.Sun Y.J.Sun Z.P.Sun J.Tang S.S.Tang Z.B.Tang C.H.Tian J.S.Tian Y.Tian Y.Tikhonov K.Todyshev T.Uglov V.Vorobyev B.D.Wan B.L.Wang B.Wang D.Y.Wang G.Y.Wang G.L.Wang H.L.Wang J.Wang J.H.Wang J.C.Wang M.L.Wang R.Wang R.Wang S.B.Wang W.Wang W.P.Wang X.C.Wang X.D.Wang X.L.Wang X.L.Wang X.P.Wang X.F.Wang Y.D.Wang Y.P.Wang Y.Q.Wang Y.L.Wang Y.G.Wang Z.Y.Wang Z.Y.Wang Z.L.Wang Z.G.Wang D.H.Wei X.L.Wei X.M.Wei Q.G.Wen X.J.Wen G.Wilkinson B.Wu J.J.Wu L.Wu P.Wu T.W.Wu Y.S.Wu L.Xia T.Xiang C.W.Xiao D.Xiao M.Xiao K.P.Xie Y.H.Xie Y.Xing Z.Z.Xing X.N.Xiong F.R.Xu J.Xu L.L.Xu Q.N.Xu X.C.Xu X.P.Xu Y.C.Xu Y.P.Xu Y.Xu Z.Z.Xu D.W.Xuan F.F.Xue L.Yan M.J.Yan W.B.Yan W.C.Yan X.S.Yan B.F.Yang C.Yang H.J.Yang H.R.Yang H.T.Yang J.F.Yang S.L.Yang Y.D.Yang Y.H.Yang Y.S.Yang Y.L.Yang Z.W.Yang Z.Y.Yang D.L.Yao H.Yin X.H.Yin N.Yokozaki S.Y.You Z.Y.You C.X.Yu F.S.Yu G.L.Yu H.L.Yu J.S.Yu J.Q.Yu L.Yuan X.B.Yuan Z.Y.Yuan Y.F.Yue M.Zeng S.Zeng A.L.Zhang B.W.Zhang G.Y.Zhang G.Q.Zhang H.J.Zhang H.B.Zhang J.Y.Zhang J.L.Zhang J.Zhang L.Zhang L.M.Zhang Q.A.Zhang R.Zhang S.L.Zhang T.Zhang X.Zhang Y.Zhang Y.J.Zhang Y.X.Zhang Y.T.Zhang Y.F.Zhang Y.C.Zhang Y.Zhang Y.Zhang Y.M.Zhang Y.L.Zhang Z.H.Zhang Z.Y.Zhang Z.Y.Zhang H.Y.Zhao J.Zhao L.Zhao M.G.Zhao Q.Zhao R.G.Zhao R.P.Zhao Y.X.Zhao Z.G.Zhao Z.X.Zhao A.Zhemchugov B.Zheng L.Zheng Q.B.Zheng R.Zheng Y.H.Zheng X.H.Zhong H.J.Zhou H.Q.Zhou H.Zhou S.H.Zhou X.Zhou X.K.Zhou X.P.Zhou X.R.Zhou Y.L.Zhou Y.Zhou Y.X.Zhou Z.Y.Zhou J.Y.Zhu K.Zhu R.D.Zhu R.L.Zhu S.H.Zhu Y.C.Zhu Z.A.Zhu V.Zhukova V.Zhulanov B.S.Zou Y.B.Zuo | 2024 | Frontiers of physics2024，19，1： | 0 |
| 6 | Effects of Vapor Pressure and Super-Hydrophobic Nanocomposite Coating on Microelectronics Reliability显示文摘Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity. To minimize the impact of vapor pressure, a super-hydrophobic(SH) coating can be applied on the exterior surface of devices in order to prevent moisture penetration. The underlying mechanism of SH coating for enhancing device reliability, however, is still not fully understood. In this paper, we present several existing theories for predicting vapor pressure within microelectronic materials. In addition, we discuss the mechanism and effectiveness of SH coating in preventing water vapor from entering a device, based on experimental results. Two theoretical models, a micro-mechanics-based whole-field vapor pressure model and a convection-diffusion model, are described for predicting vapor pressure. Both methods have been successfully used to explain experimental results on uncoated samples. However, when a device was coated with an SH nanocomposite, weight gain was still observed, likely due to vapor penetration through the SH surface. This phenomenon may cast doubt on the effectiveness of SH coatings in microelectronic devices. Based on current theories and the available experimental results, we conclude that it is necessary to develop a new theory to understand how water vapor penetrates through SH coatings and impacts the materials underneath. Such a theory could greatly improve microelectronics reliability. | Xuejun Fan Liangbiao Chen C.P.Wong Hsing-Wei Chu G.Q.Zhang | 2015 | Engineering2015，1，3： | 0 |
| 7 | 在跌落撞击负载条件下的键合互连可靠性测试(英文)显示文摘在大多数移动通信装置的寿命中最常见的故障是通过跌落撞击产生的。这是当今通过跌落撞击测试的方法测得的,该方法已经通过了JEDEC标准。然而这种方法相当耗时,且复验性方面还存在着一些问题。报道的研究是在与焊凸冷拉相关联的跌落撞击测试情况下完成的,这两者之间可以替代。本研究方法旨在了解引起故障的机械负载,并不仅仅是适合于数据。因此,跌落撞击测试便成为一种模式并备用来验证这一模式的试验,它将成为未来的处理方式。完成的焊凸冷拉测试研究证实,该测试未将焊凸偏移至一种确定的故障模式,测试研究的结果以及有关焊凸的模拟情况一并作了阐述。两种测试似乎是测试了相同的现象,根据来自CBP(cold bump pull)的结果表明与跌落撞击测试的情况相同,但由于模拟和试验工作尚未完全结束,其中的详情暂无法提供。 | J.J.M. Zaal W.D. van Driel H.P.Hochstenbachl G.Q.Zhang | 2008 | 电子工业专用设备2008，37，1： | 0 |
| 8 | INVESTIGATION INTO HOT DEFORMATION BEHAVIOR OF SPRAY FORMED SUPERALLOY GH742显示文摘In order to evaluate the deformation characteristics of spray formed superalloy GH742 and determine the appropriate forging procedure of the alloy on this basis,the influence of deformation temperature and strain rate on the ductility of spray formed GH742 was investigated by using the Gleeble-3500 thermal-mechanical testing machine.It is shown that the forgeability of spray formed GH742 is better than conventional GH742 by ingot metallurgy because of refined grain structure and enhanced chemical homogeneity of spray formed GH742.In the temperature range of 1020 to 1100℃,the ductility of spray formed GH742 is dependent on the deformation temperature and is increased linearly in proportion to the increment of deformation temperature,which is more than 40% at 1020℃ and more than 60% at the temperature between 1100 and 1140℃.Furthermore,the results indicate the flow stress is affected considerably by the deformation temperature and strain rate.In the temperature range of 1020 to 1140℃,the maximum flow stress of spray formed GH742 increases with the increment of strain rate and decreases with the increment of the deformation temperature. | Z.Li G.Q.Zhang Z.H.Zhang S.F.Tian National Key Lab.of High Temperature Structural Materials,Beijing Institute of Aeronautical Materials,Beijing 100095,China | 2004 | Acta Metallurgica Sinica(English Letters)2004，17，2： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员