| 1 | Recent progresses on designing and manufacturing of bulk refractory alloys with high performances based on controlling interfaces显示文摘Refractory alloys such as tungsten and molybdenum based alloys with high strength,thermal/electrical conductivity,low coefficient of thermal expansion and excellent creep resistances are highly desirable for applications in nuclear facilities,critical components in aerospace and defense components.However,the serious embrittlement limits the engineering usability of some refractory alloys.A lot of research results indicate that the performances of refractory alloys are closely related to the physical/chemical status,such as the interface dimension,interface type,interface composition of their grain boundaries(GBs),phase boundaries(PBs)and other interface features.This paper reviewed the recent progress of simulations and experiments on interface design strategies that achieve high performance refractory alloys.These strategies include GB interface purifying/strengthening,PB interface strengthening and PB/GB synergistic strengthening.Great details are provided on the design/fabrication strategy such as GB interface controlling,PB interface controlling and synergistic control of multi-scaled interfaces.The corresponding performances such as the mechanical property,thermal conductivity,thermal load resistance,thermal stability,irradiation resistance,and oxidation resistance are reviewed in the aspect to the effect of interfaces.In addition,the relationships between these interfaces and material properties are discussed.Finally,future developments and potential new research directions for refractory alloys are proposed. | T.Zhang H.W.Deng Z.M.Xie R.Liu J.F.Yang C.S.Liu X.P.Wang Q.F.Fang Y.Xiong | 2020 | Journal of Materials Science & Technology2020，52，17： | 6 |
| 3 | 金属硬掩膜打开工艺中的CD偏差负载控制显示文摘本文系统地研究了密集线条和孤立线条间CD(关键尺寸)刻蚀偏差参数对金属硬掩膜(MHM)刻蚀工艺的影响,涉及的范围有化学气体、源功率、压力、偏差功率以及ESC温度。特别是,如果正确地应用基于CH4的等离子固化光刻胶掩膜,发现它具有控制密集和ISO CD负载的特殊能力,且同时保持准确的密集CD。而且,在基于Cl2和基于HBr的BARC打开步骤之间,还看到刻蚀化学气体对CD负载的有重大影响。此外,也发现M-HM的应力和刻蚀后剖面影响CD负载性能。根据这些发现,成功地展示了改善钨触点和铜沟槽之间电气互连的解决方法。 | D.J.Wang M.D.Hu J.Q.Zhou C.L.Zhang H.Y.Zhang X.P.Wang | 2013 | 功能材料与器件学报2013，19，6： | 0 |
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