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| 1 | Status and development of high-power laser facilities at the NLHPLP显示文摘In this paper, we review the status of the multifunctional experimental platform at the National Laboratory of High Power Laser and Physics(NLHPLP). The platform, including the SG-II laser facility, SG-II 9th beam, SG-II upgrade(SG-II UP) facility, and SG-II 5 PW facility, is operational and available for interested scientists studying inertial confinement fusion(ICF) and a broad range of high-energy-density physics. These facilities can provide important experimental capabilities by combining different pulse widths of nanosecond, picosecond, and femtosecond scales. In addition, the SG-II UP facility, consisting of a single petawatt system and an eight-beam nanosecond system, is introduced including several laser technologies that have been developed to ensure the performance of the facility. Recent developments of the SG-II 5 PW facility are also presented. | Jianqiang Zhu Jian Zhu Xuechun Li Baoqiang Zhu Weixin Ma Xingqiang Lu Wei Fan Zhigang Liu Shenlei Zhou Guang Xu Guowen Zhang Xinglong Xie Lin Yang Jiangfeng Wang Xiaoping Ouyang Li Wang Dawei Li Pengqian Yang Quantang Fan Mingying Sun Chong Liu Dean Liu Yanli Zhang Hua Tao Meizhi Sun Ping Zhu Bingyan Wang Zhaoyang Jiao Lei Ren Daizhong Liu Xiang Jiao Hongbiao Huang Zunqi Lin | 2018 | High Power Laser Science and Engineering2018，6，4： | 8 |
| 2 | Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer显示文摘Doping, which is the intentional introducti on of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we prese nt high-quality two-dime nsional SnS2 nano sheets with well-controlled Sb dopi ng concen tration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectro n spectroscopy (XPS) measureme nt dem on strates that Sb contents of the doped samples are approximately 0.22%, 0.34% and 1.21%, respectively, and doping in duces the upward shift of the Fermi level with respect to the pristi ne SnS2. Tran smissio n electro n microscopy (TEM) characterizatio n exhibits that Sb-doped SnS2 nano sheets have a high-quality hexagonal symmetry structure and Sb element is uniformly distributed in the nano sheets. The phototra nsistors based on the Sb-doped SnS2 mono layers show n-type behavior with high mobility which is one order of magn itude higher than that of pristi ne SnS2 phototra nsistors. The photorespo nsivity and exter nal quantum efficiency (EQE) of Sb-S nS2 mono layers phototra nsistors are approximately three orders of magnitude higher than that of pristine SnS2 phototransistor. The results suggest that the method of reducing Shottky barrier width to achieve high mobility and photoresp on sivity is effective, and Sb-doped SnS2 mono layer has significant potential in future nanoelectronic and optoelectronic applications. | Junchi Liu Xiao Liu Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Liming Tang Keqiu Chen Yuan Liu Jingbo Li Zhongming Wei Xidong Duan | 2019 | Nano Research2019，12，2： | 7 |
| 3 | High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure显示文摘Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics. | Xiao Liu Guangzhuang Sun Peng Chen Junchi Liu Zhengwei Zhang Jia Li Huifang Ma Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Chen Dai Xuwan Tang Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Yuan Liu Xidong Duan | 2019 | Nano Research2019，12，2： | 5 |
| 4 | Tectonically-controlled Evolution of the Late Cenozoic Nihewan Basin, North China Craton: Constraints from Stratigraphy, Mineralogy, and Geochemistry显示文摘The Late Cenozoic basins in the Weihe–Shanxi Graben, North China Craton are delineated by northeast-striking faults. The faults have, since a long time, been related to the progressive uplift and northeastward expansion of the Tibetan Plateau. To show the relation between the basins and faults, two Pliocene–Pleistocene stratigraphic sections(Chengqiang and Hongyanangou) in the southern part of the Nihewan Basin at the northernmost parts of the graben are studied herein. Based on the sedimentary sequences and facies, the sections are divided into three evolutionary stages, such as alluvial fan-eolian red clay, fan delta, and fluvial, with boundaries at ~2.8 and ~1.8 Ma. Paleocurrent indicators, the composition of coarse clastics, heavy minerals, and the geochemistry of moderate–fine clastics are used to establish the temporal and spatial variations in the source areas. Based on features from the middlenorthern basin, we infer that the Nihewan Basin comprises an old NE–SW elongate geotectogene and a young NW–SE elongate subgeotectogene. The main geotectogene in the mid-north is a half-graben bounded by northeast-striking and northwest-dipping normal faults(e.g., Liulengshan Fault). This group of faults was mainly affected by the Pliocene(before ~2.8–2.6 Ma) NW–SE extension and controlled the deposition of sediments. In contrast, the subgeotectogene in the south was affected by northwest-striking normal faults(e.g., Huliuhe Fault) that were controlled by the subsequent weak NE–SW extension in the Pleistocene. The remarkable change in the sedimentary facies and provenance since ~1.8 Ma is possibly a signal of either weak or strong NE–SW extension. This result implies that the main tectonic transition ages of ~2.8–2.6 Ma and ~1.8 Ma in the Weihe–Shanxi Graben are affected by the Tibetan Plateau in Pliocene–Pleistocene. | LIU Jin CHEN Xingqiang CHI Zhenqing WANG Yong MIN Longrui LI Tingdong | 2018 | Acta Geologica Sinica(English Edition)2018，92，2： | 2 |
| 5 | First report of microcystin production in Microcystis smithii Komrek and Anagnostidis(Cyanobacteria) from a water bloom in Eastern China显示文摘A water bloom sample collected from Lake Dishui in Shanghai was characterized.The morphological identification showed that Micorcystis wesenbergii and Micorcystis smithii were the main component of the bloom.Five strains of M.smithii were successfully isolated.Their 16S rRNA gene sequences based phylogenetic tree showed that the five strains of M.smithii intermixed with strains of other morphospecies in Microcystis.A fragment of mcy gene encoding for microcystin synthetase was detected in one of the five M.smithii strains(CHAB 2183),indicating its potential of microcystin production.High performance liquid chromatography analysis confirmed M.smithii CHAB 2183 to produce microcystin-RR as 1550 μg per gram dry weight cells.The present investigation,for the first time,reported the isolated strains of M.smithii and microcystin production from M.smithii. | Yang Liu Wenhua Tan Xingqiang Wu Zhongxing Wu Gongliang Yu Renhui Li | 2011 | Journal of Environmental Sciences2011，23，1： | 2 |
| 6 | Aerosol laser time-of-flight mass spectrometer for the on-line measurement of secondary organic aerosol in smog chamber显示文摘 | HUANG Mingqiag LIU Xingqiang HU Changjin | 2014 | Measurement2014，55，： | 1 |
| 7 | Review on metal halide perovskite-based optoelectronic synapses显示文摘With the progress of both photonics and electronics,optoelectronic synapses are considered potential candidates to challenge the von Neumann bottleneck and the field of visual bionics in the era of big data.They are also regarded as the basis for integrated artificial neural networks(ANNs)owing to their flexible optoelectronic tunable properties such as high bandwidth,low power consumption,and high-density integration.Over the recent years,following the emergence of metal halide perovskite(MHP)materials possessing fascinating optoelectronic properties,novel MHP-based optoelectronic synaptic devices have been exploited for numerous applications ranging from artificial vision systems(AVSs)to neuromorphic computing.Herein,we briefly review the application prospects and current status of MHP-based optoelectronic synapses,discuss the basic synaptic behaviors capable of being implemented,and assess their feasibility to mimic biological synapses.Then,we focus on the two-terminal optoelectronic synaptic memristors and three-terminal transistor synaptic phototransistors(SPTs),the two essential apparatus structures for optoelectronic synapses,expounding their basic features and operating mechanisms.Finally,we summarize the recent applications of optoelectronic synapses in neuromorphic systems,including neuromorphic computing,high-order learning behaviors,and neuromorphic vision systems,outlining their potential opportunities and future development directions as neuromorphic devices in the field of artificial intelligence(AI). | XITONG HONG XINGQIANG LIU LEI LIAO XUMING ZOU | 2023 | Photonics Research2023，11，5： | 1 |
| 8 | Flexoelectricity Driven Fano Resonance in Slotted Carbon Nanotubes for Decoupled Multifunctional Sensing显示文摘Multifunctionality,interference-free signal readout,and quantum effect are important considerations for flexible sensors equipped within a single unit towards further miniaturization.To address these criteria,we present the slotted carbon nanotube(CNT)junction features tunable Fano resonance driven by flexoelectricity,which could serve as an ideal multimodal sensory receptor.Based on extensive ab initio calculations,we find that the effective Fano factor can be used as a temperature-insensitive extrinsic variable for sensing the bending strain,and the Seebeck coefficient can be used as a strain-insensitive intrinsic variable for detecting temperature.Thus,this dual-parameter permits simultaneous sensing of temperature and strain without signal interference.We further demonstrate the applicability of this slotted junction to ultrasensitive chemical sensing which enables precise determination of donor-type,acceptor-type,and inert molecules.This is due to the enhancement or counterbalance between flexoelectric and chemical gating.Flexoelectric gating would preserve the electron–hole symmetry of the slotted junction whereas chemical gating would break it.As a proof-of-concept demonstration,the slotted CNT junction provides an excellent quantum platform for the development of multistimuli sensation in artificial intelligence at the molecular scale. | Jinlong Ren Yingchao Liu Xingqiang Shi Guangcun Shan Mingming Tang Chaocheng Kaun Kunpeng Dou | 2021 | Research2021，，1： | 1 |
| 9 | Ferroelectric memory based on nanostructures显示文摘 | Xingqiang Liu Yueli Liu Wen Chen Jinchai Li Lei Liao | 2012 | Nanoscale Research Letters2012，，1： | 1 |
| 10 | Flexoelectricity Driven Fano Resonance in Slotted Carbon Nanotubes for Decoupled Multifunctional Sensing显示文摘Mulifunctionality,interference fre signal readout,and quantum eft are important considerations for flexible sensors equipped within a single unit towards further miniaturization.To address these criteria,we present the slotted carbon nanotube(CNT)junction features lunable Fano resonance driven by flexoelectricity,which could serve as an ideal multimodal sensory receptor.Based on extensive ab initio calculations,we find that the efective Fano factor can be used as a temperature insensitive extrinsic variable for sensing the bending strain,and the Seebeck cefficient can be used as a strain-insensitive intrinsic variable for detecting temperalure.Thus,this dual parameter permits simultaneous sensing of temperature and strain without signal interference.We further demonstrale the applcability of this slotted junction to ultrasensitive chemical sensing which enables precise determination of donor type.acceptor type.and inert molecules.This is due to the enhancement or counterbalance between flexoelectric and chemical gating.Flexoelectric gating would preserve the electron-hole symmetry of the slotted junction whereas chemical gating would break it.As a proof-of-concept demonstration,the slotted CNT junction provides an excellent quantum platform for the development of mulistimuli sensation in artificial itelligence at the molecular scale. | Jinlong Ren Yingchao Liu Xingqiang Shi Guangcun Shan Mingming Tang Chaocheng Kaun Kunpeng Dou | 2022 | Research2022，，2： | 0 |
| 11 | A Case of Congenital Syringocystadenoma Papilliferum显示文摘Syringocystadenoma papilliferum(SCAP)is a rare benign skin tumor that develops from the apocrine or eccrine glands.Here,we report the case of a 2-year-old girl who presented with an asymptomatic,slowly growing lesion on her scalp.On physical examination,a 2 cm×1 cm red papillary plaque with a crusted surface was noted on her scalp.Histopathological examination revealed papillomatous expansion of the epidermis and cystic invaginations extending from the epidermis down to the deep dermis.The cystic structures were lined by papillae with two layers of columnar epithelium,which showed decapitation secretion.Based on the above clinicopathological findings,a diagnosis of congenital scalp SCAP was made. | Liansheng ZHONG Meilian LIU Xingqiang GAO | 2021 | Chinese Journal Of Plastic and Reconstructive Surgery2021，3，2： | 0 |
| 12 | Promoting the optoelectronic and ferromagnetic properties of Cr_(2)S_(3)nanosheets via Se doping显示文摘Doping can change the band structure of semiconductors,thereby affecting their electrical,optical,and magnetic properties.In this study,we describe the synthesis of two-dimensional(2D)Se-doped Cr_(2)S_(3)(Se-Cr_(2)S_(3))nanosheets using the chemical vapor deposition method.In these semiconductor nanosheets,the Se doping concentration can be controlled by tuning the Se/S mass ratio in the precursor.At the doping concentrations of 10.05%and 2.05%,the room temperature conductivity and mobility were increased by nearly 4 and 2 orders of magnitude,respectively.In addition,the response time of an ultrathin Se-Cr_(2)S_(3)photodetector was 200 times shorter than that of an undoped Cr_(2)S_(3)nanosheet photodetector.4.07%-Se-Cr_(2)S_(3)nanosheets show ferrimagnetic behavior with a Curie temperature of~200 K,which is 80 K higher than that of undoped Cr_(2)S_(3)nanosheets.A density functional theory calculation indicated that the Se doping can induce the formation of intercalated Cr vacancies in SeCr_(2)S_(3)and enhance its metallic characteristics.Our results demonstrated that Se-Cr_(2)S_(3)has significant potential in future electronic,optoelectronic,and spintronic devices. | Xinyun Zhou Chang Liu Lingting Song Hongmei Zhang Ziwei Huang Chenglin He Bailing Li Xiaohui Lin Zucheng Zhang Shun Shi Dingyi Shen Rong Song Jia Li Xingqiang Liu Xuming Zou Le Huang Lei Liao Xidong Duan Bo Li | 2022 | Science China(Physics,Mechanics & Astronomy)2022，65，7： | 0 |
| 13 | Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions显示文摘Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from ideal.In this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector barrier.Fairly monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector region.The devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same time.Notably,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron transistors.Furthermore,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 K.Therefore,this work presents the potential of 2D based transistors for high-performance applications. | Xu Zhao Peng Chen Xingqiang Liu Guoli Li Xuming Zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu Lei Liao | 2020 | Nano Research2020，13，8： | 0 |
| 14 | Erratum to:Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions显示文摘 | Xu Zhao Peng Chen Xingqiang Liu Guoli Li Xuming Zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu Lei Liao | 2020 | Nano Research2020，13，8： | 0 |
| 15 | Relationship between morphospecies and microcystin-producing genotypes of Microcystis species in Chinese freshwaters显示文摘Twenty water bodies in China were sampled,and 186 strains of different Microcystis species were isolated,from which eight morpho species were identified and 43 stains containing the mcyB gene were detected.Phylogenetic analysis based on the mcyB gene indicated that the microcystin(MC)-producing Microcystis in China could be divided into two groups(ⅠandⅡ)and showed significant differences between the two groups.The maximum sequence similarity was 69.1%.Microcystins(MCs)were measured by high-performance liquid chromatography(HPLC)analysis,and no microcystin-RR(MC-RR)was detected in some strains belonging to GroupⅡ.Compared to other regions of the world,the proportion of Chinese MC-producing was different,and the regional differences were more obvious.A whole-cell polymerase chain reactio(PCR)assay was conducted to analyze the proportion of the mcyB gene in the laboratory cultured and field cultured Microcystis.The proportion of four morphospecies(M.vividis,M.ichthyoblabe,M.novacekii,and M.aeruginosa)that contained the mcyB gene exceeded 50%in the field cultured sample s.Compared with former studies,M.aeruginosa was the mo st likely morphotype that can produce MCs in the world.This study provided new insight of Microcystis hazard assessment and field monitoring. | Yang LIU Youxin CHEN Haiyan FANG Hanyang LU Xingqiang WU Gongliang YU Shin-ichi NAKANO Renhui LI | 2021 | Journal of Oceanology and Limnology2021，39，5： | 0 |
| 16 | Ultrahigh gain hot-electron tunneling transistor approaching the collection limit显示文摘A hot-electron transistor(HET)is a unipolar and majority carrier device with voltage-controlled transport of ballistic hot electrons,and the monochromatic high-energy hot electrons are afforded by the tunnel and filter oxide barriers.The injected hot electrons from the emitter transit through the tunnel barrier with a width below the carrier mean free path(MFP)into the base region and then cross the filter barrier and are finally collected by the collector. | Jun LIN Pengfei LUO Xinpei DUAN Wujun ZHANG Chao MA Tong BU Wanhan SU Bei JIANG Guoli LI Xuming ZOU Ting YU Lei LIAO Xingqiang LIU | 2023 | Science China(Information Sciences)2023，66，6： | 0 |
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